FDS6609A
April 2000
PRELIMINARY
FDS6609A
P-Channel Logic Level PowerTrench
®
MOSFET
General Description
This P-Channel Logic Level MOSFET is produced
using
Fairchild
Semiconductor's
advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
•
–6.3 A, –30 V . R
DS(ON)
= 0.032
Ω
@ V
GS
= -10 V
R
DS(ON)
= 0.05
Ω
@ V
GS
= -4.5 V
•
Low gate charge
•
Fast switching speed
•
High performance trench technology for extremely
low R
DS(ON)
•
High power and current handling capability
Applications
•
DC/DC converter
•
Load switch
•
Motor Drive
D
D
D
D
5
6
4
3
2
1
SO-8
S
S
S
G
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
–30
±20
(Note 1a)
Units
V
V
A
W
-6.3
-40
2.5
1.2
1.0
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJ
C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDS6609A
Device
FDS6609A
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
©2000
Fairchild Semiconductor Corporation
FDS6609A Rev B(W)
FDS6609A
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
V
GS
= 0 V, I
D
= -250
µA
I
D
= -250
µA,
Referenced to 25°C
V
DS
= -24 V,
V
GS
= 20 V,
V
GS
= -20 V
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
Min
-30
Typ
Max Units
V
Off Characteristics
-22
-1
100
–100
mV/°C
µA
nA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
, I
D
= –250
µA
I
D
= –250
µA,
Referenced to 25°C
V
GS
= –10 V,
I
D
= –7.0 A
V
GS
= –4.5 V, I
D
= –5.5 A
V
GS
= –10 V, I
D
= –7.0A, T
J
=125°C
V
GS
= –10 V,
V
DS
= –10 V,
V
DS
= –5 V
I
D
= –7.0 A
–1
–1.5
4
0.027
0.04
0.04
–3
V
mV/°C
0.032
0.05
0.54
Ω
I
D(on)
g
FS
–20
14.5
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= –15 V,
f = 1.0 MHz
V
GS
= 0 V,
930
278
114
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= –15 V,
V
GS
= –10 V,
I
D
= –1 A,
R
GEN
= 6
Ω
12
11
33
13
21
20
52
23
29
ns
ns
ns
ns
nC
nC
nC
V
DS
= –15 V,
V
GS
= –10 V
I
D
= –7.2 A,
18
2.5
4.1
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
V
GS
= 0 V, I
S
= –2.1 A
Voltage
–2.1
(Note 2)
A
V
–0.76
–1.2
a) 50°/W when
mounted on a 1in
2
pad of 2 oz copper
b) 105°/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS6609A Rev B(W)
FDS6609A
Typical Characteristics
40
V
GS
= -10.0V
2
-4.5V
-4.0V
R
DS(ON)
NORMALIZED
,
DRAIN-SOURCE ON-RESISTANCE
-6.0V
-5.0V
V
GS
= -3.5V
1.8
-4.0V
1.6
-4.5V
1.4
1.2
1
0.8
0
10
20
-I
D
, DIRAIN CURRENT (A)
30
40
-5.0V
-6.0V
-7.0V
-8.0V -9.0V
-10.0V
-I
D
, DRAIN CURRENT (A)
32
24
-3.5V
16
-3.0V
8
0
0
1
2
3
4
5
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.15
R
DS(ON)
ON-RESISTANCE (OHM)
,
1.6
R
DS(ON)
NORMALIZED
,
DRAIN-SOURCE ON-RESISTANCE
I
D
= -7A
V
GS
= -10V
I
D
= -3.6A
0.12
1.4
1.2
0.09
1
0.06
T
A
= 125
o
C
T
A
= 25
o
C
0.8
0.03
0.6
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
T
J
, JUNCTION TEMPERATURE (
o
C)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
30
V
DS
= -5V
25
-I
D
, DRAIN CURRENT (A)
125
o
C
20
15
10
5
0
1
2
3
4
5
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
25 C
-I
S
, REVERSE DRAIN CURRENT (A)
T
A
= -55
o
C
o
V
GS
= 0V
10
T
A
= 125
o
C
25
o
C
0.1
-55
o
C
1
0.01
0.001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6609A Rev B(W)
FDS6609A
Typical Characteristics
10
I
D
= -7.2A
8
-15V
6
V
DS
= -5V
-10V
1500
1200
C
ISS
900
f = 1 MHz
V
GS
= 0 V
4
600
2
300
C
OSS
C
RSS
0
0
5
10
Q
g
, GATE CHARGE (nC)
15
20
0
0
5
10
15
20
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
R
DS(ON)
LIMIT
10
1s
1
V
GS
= -10V
SINGLE PULSE
R
θ
JA
= 125
o
C/W
T
A
= 25 C
0.01
0.1
1
10
100
0
o
Figure 8. Capacitance Characteristics.
50
100
µ
s
1ms
10ms
100ms
40
SINGLE PULSE
R
θ
JA
= 125°C/W
T
A
= 25°C
30
10s
DC
20
0.1
10
0.001
0.01
0.1
1
t
1
, TIME (sec)
10
100
1000
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.2
R
θ
JA
(t) = r(t) + R
θ
JA
0.1
0.05
0.02
0.1
R
θJA
= 125 C/W
P(pk)
0.01
SINGLE PULSE
o
t
1
t
2
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
0.01
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6609A Rev B(W)
SO-8 Tape and Reel Data and Package Dimensions
SOIC(8lds) Packaging
Configuration:
Figure 1.0
Packaging Description:
EL ECT ROST AT IC
SEN SIT IVE DEVICES
DO NO T SHI P OR STO RE N EAR ST RO NG EL ECT ROST AT IC
EL ECT RO M AGN ETI C, M AG NET IC O R R ADIO ACT IVE FI ELD S
TNR D ATE
PT NUMB ER
PEEL STREN GTH MIN ___ __ ____ __ ___gms
MAX ___ ___ ___ ___ _ gms
Antistatic Cover Tape
ESD Label
SOIC-8 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
2,500 units per 13" or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti-
static coated). Other option comes in 500 units per 7" or
177cm diameter reel. This and some other options are
further described in the Packaging Information table.
These full reels are individually barcode labeled and
placed inside a standard intermediate box (illustrated in
figure 1.0) made of recyclable corrugated brown paper.
One box contains two reels maximum. And these boxes
are placed inside a barcode labeled shipping box which
comes in different sizes depending on the number of parts
shipped.
Static Dissipative
Embossed Carrier Tape
F63TNR
Label
Customized
Label
F852
NDS
9959
F852
NDS
9959
F852
NDS
9959
F852
NDS
9959
SOIC (8lds) Packaging Information
Packaging Option
Packaging type
Qty per Reel/Tube/Bag
Reel Size
Box Dimension (mm)
Max qty per Box
Weight per unit (gm)
Weight per Reel (kg)
Note/Comments
Standard
(no flow code)
TNR
2,500
13" Dia
343x64x343
5,000
0.0774
0.6060
L86Z
Rail/Tube
95
-
530x130x83
30,000
0.0774
-
F011
TNR
4,000
13" Dia
343x64x343
8,000
0.0774
0.9696
D84Z
TNR
500
7" Dia
184x187x47
1,000
0.0774
0.1182
F852
NDS
9959
Pin 1
SOIC-8 Unit Orientation
343mm x 342mm x 64mm
Standard Intermediate box
ESD Label
F63TNR Label sample
LOT: CBVK741B019
FSID: FDS9953A
QTY: 2500
SPEC:
F63TNLabel
F63TN Label
ESD Label
(F63TNR)3
D/C1: D9842
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
SOIC(8lds) Tape Leader and Trailer
Configuration:
Figure 2.0
Carrier Tape
Cover Tape
Components
Trailer Tape
640mm minimum or
80 empty pockets
Leader Tape
1680mm minimum or
210 empty pockets
July 1999, Rev. B
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