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BC213L

Description
TRANS PNP 30V 0.5A TO-92
CategoryDiscrete semiconductor    The transistor   
File Size45KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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TRANS PNP 30V 0.5A TO-92

BC213L Parametric

Parameter NameAttribute value
MakerON Semiconductor
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Base Number Matches1
BC213L
BC213L
PNP General Purpose Amplifier
• This device is deisgned for use as general purpose amplifiers and
switches requiring collector currents to 300mA.
• Sourced from process 68.
• See PN200 for Characteristics.
1
TO-92
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings*
T
C
=25°C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)-
- Continuous
Operating and Storage Junction Temperature Range
Parameter
Value
-30
-45
-5.0
-500
- 55 ~ 150
Units
V
V
V
mA
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
Off Characteristics
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
f
T
NF
h
fe
Parameter
Test Condition
I
C
= -2mA, I
B
= 0
I
C
= -10µA, I
E
= 0
I
E
= -10µA, I
C
= 0
V
CB
= -30V, I
E
= 0
V
EB
= -4.0V, I
C
= 0
V
CE
= -5V, I
C
= -10µA
V
CE
= -5V, I
C
= -2.0mA
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
I
C
= -100mA, I
B
= -5.0mA
V
CE
= -5.0V, I
C
= -2.0mA
V
CE
= -5.0V, I
C
= -10mA
f = 100MHz
V
CE
= -5.0V, I
C
= -200µA
R
G
= 2.0kΩ, f = 1.0KHz
I
C
= -2.0mA, V
CE
= -5.0V
f = 1.0KHz
80
-0.6
200
10
40
80
Min.
-30
-45
-5.0
-15
-15
Max.
Units
V
V
V
nA
nA
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current gain Bandwidth Product
Noise Figure
Small Signal Current Gain
On Characteristics *
400
-0.25
-0.6
-1.1
-0.72
V
V
V
MHz
dB
Small Signal Characteristics
* Pulse Test: Pulse Width
300µs, Duty Cycle
2.0%
©2002 Fairchild Semiconductor Corporation
Rev. A, August 2002

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Description TRANS PNP 30V 0.5A TO-92
Maker ON Semiconductor
Reach Compliance Code unknown
ECCN code EAR99
Is Samacsys N
Base Number Matches 1
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