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3N259

Description
RECTIFIER BRIDGE 1000V 2A KBPM
CategoryDiscrete semiconductor    diode   
File Size101KB,3 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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3N259 Overview

RECTIFIER BRIDGE 1000V 2A KBPM

3N259 Parametric

Parameter NameAttribute value
package instructionR-PSIP-T4
Reach Compliance Codecompliant
Factory Lead Time1 week
Minimum breakdown voltage1000 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeR-PSIP-T4
Maximum non-repetitive peak forward current60 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Maximum power dissipation4.7 W
Maximum repetitive peak reverse voltage1000 V
Maximum reverse current5 µA
Reverse test voltage1000 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Base Number Matches1
2KBP005M/3N253 - 2KBP10M/3N259 — Bridge Rectifiers
November 2010
2KBP005M/3N253 - 2KBP10M/3N259
Bridge Rectifiers
Features
• Surge overload rating: 60 amperes peak.
• Reliable low cost construction utilizing molded plastic technique.
• UL certified, UL #E111753.
+
~ ~ _
KBPM
* The nodules on the package may not be present on the actual parts.
Absolute Maximum Ratings *
Symbol
V
RRM
V
RMS
V
R
I
F(AV)
I
FSM
T
STG
T
J
T
a
= 25°C unless otherwise noted
Value
Parameter
Maximum Repetitive Reverse Voltage
Maximum RMS Bridge Input Voltage
DC Reverse Voltage
(Rated V
R
)
Average Rectified Forward Current,
@ T
A
= 50°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half-Sine-Wave
Storage Temperature Range
Junction Temperature
005M 01M 02M 04M 06M 08M 10M
253
50
35
50
Units
V
V
V
A
A
°C
°C
254
100
70
100
255
200
140
200
256
400
280
400
2.0
60
257
600
420
600
258
800
560
800
259
1000
700
1000
-55 to +150
-55 to +150
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
Power Dissipation
Thermal Resistance, Junction to Ambient, * per leg
Parameter
Value
4.7
18
Units
W
°C/W
* Device mounted on PCB with 0.47
×
0.47” (12
×
12mm).
© 2010 Fairchild Semiconductor Corporation
2KBP005M/3N253 - 2KBP10M/3N259 Rev. E2
1
www.fairchildsemi.com

3N259 Related Products

3N259 2KBP005M 2KBP02M 2KBP06M 2KBP08M 3N255 3N256 3N258
Description RECTIFIER BRIDGE 1000V 2A KBPM Bridge Rectifier Diode DIODE BRIDGE 200V 2A KBPM DIODE BRIDGE 600V 2A KBPM DIODE BRIDGE 800V 2A KBPM RECTIFIER BRIDGE 200V 2A KBPM RECTIFIER BRIDGE 400V 2A KBPM RECTIFIER BRIDGE 800V 2A KBPM
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE Simplex Simplex Simplex Simplex Simplex Simplex
technology - - standard standard standard standard standard standard
Voltage - Peak Reverse (Maximum) - - 200V 600V 800V 200V 400V 800V
Current - average rectification (Io) - - 2A 2A 2A 2A 2A 2A
Voltage at different If - Forward (Vf - - 1.1V @ 3.14A 1.1V @ 3.14A 1.1V @ 3.14A 1.1V @ 3.14A 1.1V @ 3.14A 1.1V @ 3.14A
Current at different Vr - Reverse leakage current - - 5µA @ 200V 5µA @ 600V 5µA @ 800V 5µA @ 200V 5µA @ 400V 5µA @ 800V
Operating temperature - - -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ)
Installation type - - Through hole Through hole Through hole Through hole Through hole Through hole
Package/casing - - 4-SIP,KBPM 4-SIP,KBPM 4-SIP,KBPM 4-SIP,KBPM 4-SIP,KBPM 4-SIP,KBPM
Supplier device packaging - - KBPM KBPM KBPM KBPM KBPM KBPM
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