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1N963B

Description
DIODE ZENER 12V 500MW DO35
CategoryDiscrete semiconductor    diode   
File Size108KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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1N963B Overview

DIODE ZENER 12V 500MW DO35

1N963B Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerON Semiconductor
package instructionHERMETIC SEALED, GLASS, DO-35, 2 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
Is SamacsysN
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance12 Ω
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation0.4 W
Certification statusNot Qualified
Nominal reference voltage12 V
surface mountNO
technologyZENER
Terminal formWIRE
Terminal locationAXIAL
Maximum voltage tolerance5%
Working test current10.5 mA
Base Number Matches1
1N957B - 1N979B Zener Diodes
June 2007
1N957B - 1N979B
Zener Diodes
Tolerance = 5%
DO-35 Glass case
COLOR BAND DENOTES CATHODE
Absolute Maximum Ratings *
Symbol
P
D
T
A
= 25°C unless otherwise noted
Parameter
Power Dissipation
@ TL
75°C, Lead Length = 3/8”
Derate above 75°C
Operating and Storage Temperature Range
Value
500
4.0
-65 to +200
Units
mW
mW/°C
°C
T
J
, T
STG
* These ratings are limiting values above which the serviceability of the diode may be impaired.
Electrical Characteristics
V
Z
(Volts)
Device
1N957B
1N958B
1N959B
1N960B
1N961B
1N962B
1N963B
1N964B
1N965B
1N966B
1N967B
1N968B
1N969B
1N970B
1N971B
1N972B
1N973B
1N974B
1N975B
1N976B
1N977B
1N978B
1N979B
Min.
6.46
7.125
7.79
8.645
9.5
10.45
11.4
12.35
14.25
15.2
17.1
19
20.9
22.8
25.652
8.5
31.35
34.2
37.05
40.85
44.65
48.45
53.2
Typ.
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
T
A
=25°C unless otherwise noted
(Note 1)
Z
Z
(Ω)
@ I
Z
(mA)
18.5
16.5
15
14
12.5
11.5
10.5
9.5
8.5
7.8
7.0
6.2
5.6
5.2
4.6
4.2
3.8
3.4
3.2
3.0
2.7
2.5
2.2
Z
Z
@ I
Z
4.5
5.5
6.5
7.5
8.5
9.5
11.5
13
16
17
21
25
29
33
41
49
58
70
80
93
105
125
150
(Note 2)
I
R
@ V
R
mA
1.0
0.5
0.5
0.5
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
μA
150
75
50
25
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Volts
5.2
5.7
6.2
6.9
7.6
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
Max.
7.14
7.875
8.61
9.555
10.5
11.55
12.6
13.65
15.75
16.8
18.9
21
23.1
25.2
28.35
31.5
34.65
37.8
40.95
45.15
49.35
53.55
58.8
Z
ZK
@ I
ZK
Ω
700
700
700
700
700
700
700
700
700
700
750
750
750
750
750
1000
1000
1000
1000
1500
1500
1500
2000
I
ZM
(mA)
(Note 3)
47
42
38
35
32
28
26
24
21
19
17
15
14
13
11
10
9.2
8.5
7.8
7.0
6.4
5.9
5.4
©2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
1N957B - 1N979B Rev. F1

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