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BC318C

Description
TRANS PNP 20V 0.1A TO-92
Categorysemiconductor    Discrete semiconductor   
File Size70KB,2 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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BC318C Overview

TRANS PNP 20V 0.1A TO-92

BC318C Parametric

Parameter NameAttribute value
Transistor typePNP
Current - Collector (Ic) (Maximum)100mA
Voltage - collector-emitter breakdown (maximum)20V
Vce saturation value (maximum value) when different Ib,Ic500mV @ 5mA,100mA
Current - collector cutoff (maximum)30nA(ICBO)
DC current gain (hFE) at different Ic, Vce (minimum value)420 @ 2mA,5V
Power - Max625mW
Frequency - Transition-
Operating temperature-55°C ~ 150°C(TJ)
Installation typeThrough hole
Package/casingTO-226-3, TO-92-3 standard body (!--TO-226AA)
Supplier device packagingTO-92-3
BC318C — PNP Epitaxial Silicon Transistor
September 2007
BC318C
PNP Epitaxial Silicon Transistor
• This device is designed for general purpose amplifier application at collector currents to 800mA.
• Sourced from process 38.
1
TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
T
J
, T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Operating and Storage Junction Temperature Range
Parameter
Value
30
20
5
100
-55 ~ 150
Units
V
V
V
mA
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
T
a
=25°C unless otherwise noted
Parameter
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
625
5.0
83.3
200
Units
mW
mW/°C
°C/W
°C/W
*Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”.
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
BV
CES
I
CBO
h
FE
V
CE
(sat)
V
BE
(on)
C
cb
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Test Condition
I
C
= 10μA
I
C
= 1mA
I
E
= 100μA
I
C
= 100μA
V
CB
= 20V
T = 25
°C
T = 100
°C
Min.
30
20
5
30
Typ.
Max.
Units
V
V
V
V
30
15
100
420
800
0.2
0.5
0.57
0.72
0.77
4
nA
μA
V
CE
= 5V, I
C
= 10
μA
V
CE
= 5V, I
C
= 2 mA
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5 mA
V
CE
= 5V, I
C
= 2m
V
CE
= 5V, I
C
= 10mA
V
CB
= 10V, I
E
= 0, f = 1MHz
V
V
pF
Notes:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3.These ratings are based on a maximum junction temperature of 150degrees C.
© 2007 Fairchild Semiconductor Corporation
BC318C Rev. 1.0.0
1
www.fairchildsemi.com
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