Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0 V, I
S
= –2.1 A
I
F
= –14.5 A,
d
iF
/d
t
= 100 A/µs
(Note 2)
(Note 2)
–0.7
44
29
–2.1
–1.2
A
V
ns
nC
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 50°C/W (10 sec) 62.5°
C/W steady state when
mounted on a 1 in
2
pad
of 2 oz copper
b) 105°C/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125°/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
µ
s, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
2
FDS6673AZ Rev. C(W)
www.fairchildsemi.com
FDS6673AZ 30 Volt P-Channel PowerTrench
®
MOSFET
Typical Characteristics
80
V
GS
= -10V
-6.0V
-4.5V
-4.0V
-3.5V
3.8
60
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
3.4
3
V
GS
= - 3.0V
2.6
2.2
-3.5V
1.8
1.4
1
0.6
-4.0V
-4.5V
-5.0V
-6.0V
-10V
-I
D
, DRAIN CURRENT (A)
40
-3.0V
20
0
0
0.5
1
1.5
2
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
20
40
-I
D
, DRAIN CURRENT (A)
60
80
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.02
1.7
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.6
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
-50
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= -14.5A
V
GS
= -10V
I
D
= -7.3A
0.02
0.02
T
A
= 125
o
C
0.01
0.01
T
A
= 25
o
C
0.00
-25
0
25
50
75
100
125
150
175
2
4
6
8
10
T
J
, JUNCTION TEMPERATURE (°C)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
80
100
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
-I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= -5V
T
A
= -55°C
125°·
C
25°C
10
V
GS
= 0V
-I
D
, DRAIN CURRENT (A)
60
T
A
= 125°C
1
25°C
0.1
-55°C
0.01
40
20
0
1.5
2
2.5
3
3.5
4
0.001
0
0.2
0.4
0.6
0.8
1
1.2
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
3
FDS6673AZ Rev. C(W)
www.fairchildsemi.com
FDS6673AZ 30 Volt P-Channel PowerTrench
®
MOSFET
Typical Characteristics
10
6000
I
D
= -14.5A
8
V
DS
= -10V
-20V
6
-15V
C
ISS
5000
f = 1 MHz
V
GS
= 0 V
-V
GS
, GATE-SOURCE VOLTAGE (V)
CAPACITANCE (pF)
4000
3000
4
2000
C
OSS
2
1000
0
0
10
20
30
40
50
60
70
80
90
Q
g
, GATE CHARGE (nC)
C
RSS
0
0
5
10
15
20
25
30
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
100
µs
R
DS(ON)
LIMIT
50
Figure 8. Capacitance Characteristics.
P(pk), PEAK TRANSIENT POWER (W)
-I
D
, DRAIN CURRENT (A)
10
1ms
10ms
100ms
1s
40
SINGLE PULSE
R
θ
JA
= 125°C/W
T
A
= 25°C
30
1
10s
DC
V
GS
= -10V
SINGLE PULSE
R
θ
JA
= 125°C/W
T
A
= 25°C
20
0.1
10
0.01
0.01
0.1
1
10
100
0
0.001
0.01
0.1
1
t
1
, TIME (sec)
10
100
1000
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.2
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 125°C/W
P(pk)
0.1
0.1
0.05
0.02
0.01
t
1
t
2
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/t
2
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
4
FDS6673AZ Rev. C(W)
www.fairchildsemi.com
FDS6673AZ 30 Volt P-Channel PowerTrench
®
MOSFET
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not intended to be an exhaustive list of all such trademarks.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
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As used herein:
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1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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First Production
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