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FDR6580

Description
MOSFET N-CH 20V 11.2A SSOT-8
Categorysemiconductor    Discrete semiconductor   
File Size239KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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FDR6580 Overview

MOSFET N-CH 20V 11.2A SSOT-8

FDR6580 Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)20V
Current - Continuous Drain (Id) at 25°C11.2A(Ta)
Drive voltage (maximum Rds On, minimum Rds On)2.5V,4.5V
Rds On (maximum value) when different Id, Vgs9 milliohms @ 11.2A, 4.5V
Vgs (th) (maximum value) when different Id1.5V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)48nC @ 4.5V
Vgs (maximum value)±8V
Input capacitance (Ciss) at different Vds (maximum value)3829pF @ 10V
FET function-
Power dissipation (maximum)1.8W(Ta)
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount
Supplier device packagingSuperSOT™-8
Package/casing8-SMD, gull wing
FDR6580
April 1999
ADVANCE INFORMATION
FDR6580
N-Chennal 2.5V Specified PowerTrench
TM
MOSFET
General Description
This N-Channel 2.5V specified MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
Features
•
•
•
•
11 A, 20 V. R
DS(ON)
= 0.009
@ V
GS
= 4.5 V
R
DS(ON)
= 0.013
@ V
GS
= 2.5 V.
Low gate charge.
High performance trench technology for extremely
low R
DS(ON)
.
Small footprint (38% smaller than a standard SO-8); low
profile package (1 mm thick); power handling capability
similar to SO-8.
Applications
•
•
•
Load switch
Motor driving
Power Management
D
S
D
S
5
6
D
G
4
3
2
1
7
8
SuperSOT -8
TM
D
D
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
T
A
= 25°C unless otherwise noted
Parameter
Ratings
20
(Note 1a)
Units
V
V
A
W
±
8
11
50
1.8
1.0
0.9
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
stg
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
70
20
°
C/W
°
C/W
Package Outlines and Ordering Information
Device Marking
.6580
Device
FDR6580
Reel Size
13’’
Tape Width
12mm
Quantity
3000 units
1999
Fairchild Semiconductor Corporation
FDR6580, Rev. A

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