BS170PSTOB datasheet, PDF - EEWORLD Datasheet

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BS170PSTOB: DescriptionMOSFET N-CH 60V 0.27A TO92-3; Categorysemiconductor Discrete semiconductor; File Size21KB，1 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/; Environmental Compliance

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BS170PSTOB Overview

MOSFET N-CH 60V 0.27A TO92-3

BS170PSTOB Parametric

Parameter Name	Attribute value
FET type	N channel
technology	MOSFET (metal oxide)
Drain-source voltage (Vdss)	60V
Current - Continuous Drain (Id) at 25°C	270mA（Ta）
Drive voltage (maximum Rds On, minimum Rds On)	10V
Rds On (maximum value) when different Id, Vgs	5 ohms @ 200mA, 10V
Vgs (th) (maximum value) when different Id	3V @ 1mA
Vgs (maximum value)	±20V
Input capacitance (Ciss) at different Vds (maximum value)	60pF @ 10V
FET function	-
Power dissipation (maximum)	625mW（Ta）
Operating temperature	-55°C ~ 150°C（TJ）
Installation type	Through hole
Supplier device packaging	E-Line (TO-92 compatible)
Package/casing	E-Line-3

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N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 2 – SEPT 93

FEATURES

* 60 Volt V

DS

* R

DS(on)

=5Ω

BS170P

D

G

S

REFER TO ZVN3306A FOR GRAPHS

E-Line

TO92 Compatible

SYMBOL

V

DS

I

D

I

DM

V

GS

P

tot

T

j

:T

stg

VALUE

60

270

3

±20

625

-55 to +150

UNIT

V

mA

A

V

mW

°C

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Drain-Source Voltage

Continuous Drain Current at T

amb

=25°C

Pulsed Drain Current

Gate-Source Voltage

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER

Drain-Source

Breakdown Voltage

Gate-Source

Threshold Voltage

Gate Body Leakage

Zero Gate Voltage

Drain Current

SYMBOL

BV

DSS

V

GS(th)

I

GSS

I

DSS

MIN.

60

0.8

3

10

0.5

5

200

TYP.

MAX.

UNIT

V

nA

µA

Ω

mS

CONDITIONS.

I

D

=100µA, V

GS

=0V

I

D

=1mA, V

DS

=V

GS

VGS=15V, V

DS

=0V

V

GS

=0V, V

DS

=25V

V

GS

=10V, I

D

=200mA

V

DS

=10V, I

D

=200mA

Static Drain-Source

R

DS(on)

on-State Resistance (1)

Forward

g

fs

Transconductance (1)(2)

Input Capacitance (2)

Turn-On Time (2)(3)

Turn-Off Time (2)(3)

C

iss

t

(on)

t

(off)

60

10

pF

ns

V

GS

=0V, V

DS

=10V

f=1MHz

V

DD

≈15V,

I

D

=600mA

(1) Measured under pulsed conditions. Pulse width=300µs. Duty cycle

≤

2% (2) Sample test

(3) Switching times measured with a 50Ω source impedance and <5ns rise time on a pulse generator

3-27

BS170PSTOB Related Products

	BS170PSTOB	BS170P	BS170PSTOA
Description	MOSFET N-CH 60V 0.27A TO92-3	MOSFET N-CH 60V 270MA TO92-3	MOSFET N-CH 60V 0.27A TO92-3
FET type	N channel	N channel	N channel
technology	MOSFET (metal oxide)	MOSFET (metal oxide)	MOSFET (metal oxide)
Drain-source voltage (Vdss)	60V	60V	60V
Current - Continuous Drain (Id) at 25°C	270mA（Ta）	270mA（Ta）	270mA（Ta）
Drive voltage (maximum Rds On, minimum Rds On)	10V	10V	10V
Rds On (maximum value) when different Id, Vgs	5 ohms @ 200mA, 10V	5 ohms @ 200mA, 10V	5 ohms @ 200mA, 10V
Vgs (th) (maximum value) when different Id	3V @ 1mA	3V @ 1mA	3V @ 1mA
Vgs (maximum value)	±20V	±20V	±20V
Input capacitance (Ciss) at different Vds (maximum value)	60pF @ 10V	60pF @ 10V	60pF @ 10V
Power dissipation (maximum)	625mW（Ta）	625mW（Ta）	625mW（Ta）
Operating temperature	-55°C ~ 150°C（TJ）	-55°C ~ 150°C（TJ）	-55°C ~ 150°C（TJ）
Installation type	Through hole	Through hole	Through hole
Supplier device packaging	E-Line (TO-92 compatible)	TO-92-3	E-Line (TO-92 compatible)
Package/casing	E-Line-3	TO-226-3, TO-92-3 standard body (!--TO-226AA)	E-Line-3

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