FMMTH10TC datasheet, PDF - EEWORLD Datasheet

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FMMTH10TC: DescriptionTRANSISTOR RF NPN SOT23-3; Categorysemiconductor Discrete semiconductor; File Size111KB，2 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/; Environmental Compliance

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FMMTH10TC Overview

TRANSISTOR RF NPN SOT23-3

FMMTH10TC Parametric

Parameter Name	Attribute value
Transistor type	NPN
Voltage - collector-emitter breakdown (maximum)	25V
Frequency - Transition	650MHz
Noise figure (dB, typical values at different f)	3dB ~ 5dB @ 500MHz
Gain	-
Power - Max	330mW
DC current gain (hFE) at different Ic, Vce (minimum value)	60 @ 4mA，10V
Current - Collector (Ic) (Maximum)	25mA
Operating temperature	-55°C ~ 150°C（TJ）
Installation type	surface mount
Package/casing	TO-236-3，SC-59，SOT-23-3
Supplier device packaging	SOT-23-3

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SOT23 NPN SILICON PLANAR

RF TRANSISTOR

ISSUE 2 NOVEMBER 1995

FEATURES

* High f

T

=650MHz

* Maximum capacitance 0.7pF

* Low noise < 5dB at 500MHz

FMMTH10

E

C

B

PARTMARKING DETAIL

3EZ

SOT23

SYMBOL

V

CES

V

CEO

V

EBO

I

C

I

CM

P

tot

T

j

:T

stg

MAX.

UNIT

V

100

0.5

Typ.

0.45

0.65

0.95

60

650

0.7

9

Typ.

3

5

MHz

pF

ps

dB

nA

V

pF

V

VALUE

30

25

3

25

50

330

-55 to +150

CONDITIONS.

I

C

=100

µ

A, I

E

=0

I

C

=1mA, I

B

=0

I

E

=10

µ

A, I

C

=0

V

CB

=25V, I

E

=0

V

EB

=2V,I

C

=0

I

C

=4mA, I

B

=0.4mA

V

CB

=10V, I

E

=0

f=1MHz

I

C

=4mA, V

CE

=10V

I

C

=4mA, V

CE

=10V*

I

C

=4mA, V

CE

=10V, f=100MHz

V

CB

=10V, I

E

=0, f=1MHz

I

C

=4mA, V

CB

=10V, f=31.8MHz

I

C

=2mA, V

CE

=5V

f=500MHz,

UNIT

V

mA

mW

°C

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Pulse Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

PARAMETER

Collector-Base Breakdown

Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base Breakdown

Voltage

Collector Cut-Off

Current

Emitter Cut-Off Current

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

MIN.

30

25

3

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C)

Collector-Emitter Saturation V

CE(sat)

Voltage

Common Base Feedback

Capacitance

Base-Emitter Turn-On

Voltage

Static Forward Current

Transfer Ratio

Transition Frequency

C

rb

V

BE(on)

h

FE

f

T

Collector Base Capacitance C

cb

Collector Base Time Constant r

b

C

c

Noise Figure

N

f

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%

Spice parameter data is available upon request for this device

3 - 181

FMMTH10TC Related Products

	FMMTH10TC	FMMTH10TA
Description	TRANSISTOR RF NPN SOT23-3	trans RF npn 25v 25ma sot23-3

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