SOT23 PNP SILICON PLANAR HIGH GAIN
MEDIUM POWER TRANSISTOR
ISSUE 1 – DECEMBER 1997
FEATURES
Very low equivalent on-resistance;
R
CE(sat)
=210mΩ at 1.5A
COMPLEMENTARY TYPE –
PARTMARKING DETAIL –
FMMTL619
L70
FMMTL720
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
j
:T
stg
VALUE
-40
-40
-5
-1
-1.5
-200
-500
-55 to +150
UNIT
V
V
V
A
A
mA
mW
°C
FMMTL720
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
MIN.
-40
-40
-5
TYP.
-95
-70
-8.8
-10
-10
-10
-40
-150
-225
-985
-825
300
300
200
150
75
490
450
340
250
150
MHz
pF
61
61
ns
ns
-50
-200
-300
-1100
-1000
MAX.
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
CONDITIONS.
I
C
=-100µA
I
C
=-10mA*
I
E
=-100µA
V
CB
=-35V
V
EB
=-4V
V
CE
=-35V
I
C
=-100mA, I
B
=-10mA*
I
C
=-500mA, I
B
=-20mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-1A, V
CE
=-5V*
I
C
=-10mA, V
CE
=-5V
I
C
=-100mA, V
CE
=-5V*
I
C
=-0.5A, V
CE
=-5V*
I
C
=-1A, V
CE
=-5V*
I
C
=-1A, V
CE
=-2V*
I
C
=-50mA, V
CE
=-10V
f=100MHz
V
CB
=-10V, f=1MHz
I
C
=-1A, V
CC
=-10V
I
B1
=I
B2
=-10mA
Collector Cut-Off Current I
CBO
Emitter Cut-Off Current
I
EBO
V
CE(sat)
Collector Cut-Off Current I
CES
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
Static Forward
Current Transfer Ratio
V
BE(sat)
V
BE(on)
h
FE
Transition Frequency
Collector-Base
Breakdown Voltage
Switching times
f
T
C
obo
t
on
t
off
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
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