SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* Low equivalent on-resistance;
R
CE(sat)
93mΩ at 3A
* Gain of 300 at I
C
=2 Amps and Very low saturation voltage
APPLICATIONS
* Battery powered circuits
COMPLEMENTAY TYPE FZT688B
PARTMARKING DETAIL FZT788B
C
FZT788B
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
TYP.
VALUE
-15
-15
-5
-8
-3
2
-55 to +150
MAX. UNIT
V
V
V
-0.1
-0.1
-0.15
-0.25
-0.45
-0.5
-0.9
-0.75
500
400
300
150
100
225
25
35
400
1500
µ
A
µ
A
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
SYMBOL MIN.
-15
-15
-5
CONDITIONS.
I
C
=-100
µ
A
I
C
=-10mA*
I
E
=-100
µ
A
V
CB
=-10V
V
EB
=-4V
I
C
=-0.5A, I
B
=-2.5mA*
I
C
=-1A, I
B
=-5mA*
I
C
=-2A, I
B
=-10mA*
I
C
=-3A, I
B
=-50mA*
I
C
=-1A, I
B
=-5mA*
I
C
=-1A, V
CE
=-2V*
I
C
=-10mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-6A, V
CE
=-2V*
MHz
pF
pF
ns
ns
I
C
=-50mA, V
CE
=-5V
f=50MHz
V
EB
=-0.5V, f=1MHz
V
CB
=-10V, f=1MHz
I
C
=-500mA, I
B1
=-50mA
I
B2
=-50mA, V
CC
=-10V
Collector-Base Breakdown Voltage V
(BR)CBO
Collector-Emitter Breakdown Voltage V
(BR)CEO
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
Transition Frequency
Input Capacitance
Output Capacitance
Switching Times
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
V
V
V
V
V
BE(sat)
V
BE(on)
h
FE
f
T
C
ibo
C
obo
t
on
t
off
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
3 - 244
Microcontroller MCU
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