SM-8 DUAL N-CHANNEL ENHANCEMENT
MODE AVALANCHE RATED MOSFET
ISSUE 1 - NOVEMBER 1995
ZDM4206N
D
1
D
1
D
2
D
2
PARTMARKING DETAIL – M4206N
G
1
S
1
G
2
S
2
SM-8
(8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate-Source Voltage
Continuous Body Diode Current at T
amb
=25°C
Avalanche Current – Repetitive
Avalanche Energy – Repetitive
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
I
SD
I
AR
E
AR
T
j
:T
stg
VALUE
60
1
8
±
20
1
600
15
-55 to +150
UNIT
V
A
A
V
A
mA
mJ
°C
THERMAL CHARACTERISTICS
PARAMETER
Total Power Dissipation at T
amb
= 25°C*
Any single die “on”
Both die “on” equally
Derate above 25°C*
Any single die “on”
Both die “on” equally
Thermal Resistance - Junction to Ambient*
Any single die “on”
Both die “on” equally
SYMBOL
P
tot
2.25
2.75
18
22
55.6
45.5
W
W
mW/ °C
mW/ °C
°C/ W
°C/ W
VALUE
UNIT
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB
with copper equal to 2 inches square.
3 - 317
ZDM4206N
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance(1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
SYMBOL MIN.
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
300
100
60
20
8
12
12
15
3
1
1.5
60
1.3
3
100
10
100
MAX.
UNIT CONDITIONS.
V
V
nA
µA
µA
A
Ω
Ω
mS
pF
pF
pF
ns
ns
ns
ns
V
DD
≈25V,
I
D
=1.5A,V
GEN
=10V
V
DS
=25V, V
GS
=0V, f=1MHz
I
D
=1mA, V
GS
=0V
I
D
=1mA, V
DS
= V
GS
V
GS
=± 20V, V
DS
=0V
V
DS
=60V, V
GS
=0
V
DS
=48V, V
GS
=0V, T=125°C
(2)
V
DS
=25V, V
GS
=10V
V
GS
=10V,I
D
=1.5A
V
GS
=5V,I
D
=0.5A
V
DS
=25V,I
D
=1.5A
Reverse Transfer Capacitance (2) C
rss
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
t
d(on)
t
r
t
d(off)
t
f
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse
generator
TYPICAL CHARACTERISTICS
10
V
GS=
20V
16V
14V
12V
10V
9V
8V
7V
2
6V
5V
4.5V
4V
3.5V
50
10
V
GS=
20V
16V
14V
12V
10V
9V
8V
7V
6V
5V
4.5V
4V
3.5V
10
I
D
- Drain Current (Amps)
6
I
D
- Drain Current (Amps)
8
8
6
4
4
2
0
0
10
20
30
40
0
2
4
6
8
V
DS
- Drain Source
Voltage (Volts)
V
DS
- Drain Source
Voltage (Volts)
Output Characteristics
Saturation Characteristics
3 - 318
ZDM4206N
TYPICAL CHARACTERISTICS
V
DS-
Drain Source
Voltage (Volts)
10
I
D
- Drain Current (Amps)
6
V
DS=
10V
4
8
6
4
I
D=
3A
1.5A
0.5A
0
2
4
6
8
10
2
2
0
0
0
2
4
6
8
10
V
GS-
Gate Source Voltage
(Volts)
V
GS-
Gate Source
Voltage (Volts)
Voltage Saturation Characteristics
Transfer Characteristics
R
DS(on)
-Drain Source On Resistance
(Ω)
10
V
GS
=3.5V
4.5V
6V
8V 10V
2.6
Normalised R
DS(on)
and V
GS(th)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-50 -25
ta
sis
Re
e
rc
ou
-S
ain
Dr
D
eR
nc
)
on
S(
V
GS=
10V
I
D=
1.5A
14V
1.0
20V
20V
V
GS=
V
DS
I
D=
1mA
Gate Threshold Voltage V
GS(TH)
0.1
0.1
1.0
10
0
25 50 75 100 125 150 175 200 225
I
D-
Drain Current
(Amps)
T
j
-Junction Temperature (°C)
On-resistance v drain current
Normalised R
DS(on)
and V
GS(th)
v Temperature
1000
1000
g
fs
-Transconductance (mS)
700
600
500
400
300
200
100
0
0
1
2
g
fs
-Transconductance (mS)
900
800
V
DS=
10V
900
800
700
600
500
400
300
200
100
0
0
1
2
3
4
5
6
7
8
9
10
V
DS=
10V
3
4
5
6
7
8
9
10
I
D
- Drain Current (Amps)
V
GS
-Gate Source Voltage (Volts)
Transconductance v drain current
Transconductance v gate-source voltage
3 - 319
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