NPN SILICON PLANAR
RF TRANSISTOR
ISSUE 2 MARCH 94
FEATURES
* High f
T
, 1.3GHz
* Low noise < 5dB at 500MHz
* Power output at 500MHz >175mW
ZTX325
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Mean Collector Current (Averaged over 100
µ
s)
Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
AV
I
CM
P
tot
T
j
:T
stg
30
15
2.5
25
50
350
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
mA
mA
mW
°C
E
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Emitter
Sustaining Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Static Forward Current
Transfer Ratio
Transition Frequency
Capacitance, Collector
Depletion Layer
Capacitance, Emitter
Depletion Layer
Feedback Capacitance
Feedback Time Constant
SYMBOL
V
CEO(SUS)
V
(BR)EBO
I
CBO
I
CES
h
FE
f
T
C
TC
C
TE
-C
re
r
bb
C
b
c
2.0
3-161
0.85
12
25
20
1.0
1.3
1.5
2.0
MIN.
15
5
10
10
150
125
GHz
GHz
pF
pF
pF
ps
TYP.
MAX. UNIT
V
V
nA
µ
A
CONDITIONS.
I
C
=10mA, I
B
=0
I
E
=10
µ
A, I
C
=0
V
CB
=15V, I
E
=0
V
CE
=15V, V
BE
=0
I
C
=2mA, V
CE
=1V*
I
C
=25mA, V
CE
=1V*
I
C
=2mA, V
CE
=5V, f=400MHz
I
C
=25mA, V
CE
=5V, f=400MHz
V
CB
=10V, I
E
=I
e
=0, f=1MHz
VEB=0.5V, I
C
=I
c
=0, f=1MHz
V
CE
=5V, I
C
=2mA, f=1MHz
V
CB
=5V, -I
E
=2mA, f=10.7MHz
ZTX325
ELECTRICAL CHARACTERISTICS
PARAMETER
Noise Figure
Intermodulation
Distortion
Output Power
(at T
case
=25°C)*
SYMBOL
N
d
im
-53
MIN.
TYP.
MAX. UNIT
5.0
dB
dB
CONDITIONS.
f=500MHz, V
CE
=5V, I
C
=2mA,
R
S
=50
Ω
I
C
=14mA, V
CE
=6V, f=217MHz
V
0
=100mV, R
L
=37.5
Ω
,
f
1
=183MHz, f
2
=200MHz
V
CE
=13.5V, I
C
=22.5mA
P
in
=25mW, f=500MHz
P
O
175
mW
*It is essential that care be taken to reduce steady state current when no h.f. signal is applied.
TYPICAL CHARACTERISTICS
80
f=400MHz
2
V
CE
=10V
1
V
CE
=5V
h
FE
- Normalised Gain
3
f
T
- (GHz)
60
V
CE
=10V
40
20
0
0.1
1
10
100
1000
1µ
10µ
100µ
1m
10m
100m
I
C
-
Collector Current (mA)
I
C
-
Collector Current (A)
f
T
v I
C
h
FE
v I
C
2.0
f=1MHz
C
RE
- (pF)
1.5
1.0
0.5
0
10
20
30
V
CE
-
(V)
C
RE
v V
CE
3-162
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