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ZVN1409ASTZ

Description
MOSFET N-CH 90V 0.01A TO92-3
Categorysemiconductor    Discrete semiconductor   
File Size80KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

ZVN1409ASTZ Overview

MOSFET N-CH 90V 0.01A TO92-3

ZVN1409ASTZ Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)90V
Current - Continuous Drain (Id) at 25°C10mA(Ta)
Drive voltage (maximum Rds On, minimum Rds On)10V
Rds On (maximum value) when different Id, Vgs250 ohms @ 5mA, 10V
Vgs (th) (maximum value) when different Id2.4V @ 100µA
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)6.5pF @ 25V
FET function-
Power dissipation (maximum)625mW(Ta)
Operating temperature-55°C ~ 150°C(TJ)
Installation typeThrough hole
Supplier device packagingE-Line (TO-92 compatible)
Package/casingE-Line-3
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 90 Volt V
DS
* Low input capacitance
* Fast switching
ZVN1409A
D
G
S
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
VALUE
90
10
40
±
20
625
-55 to +150
UNIT
V
mA
mA
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Breakdown
Voltage
Gate Body Leakage
Zero Gate Voltage Drain
Current
On State Drain Current (1)
Static Drain Source On State
Resistance (1)
SYMBOL
BV
DSS
V
GS(th)
I
GSS
I
DSS
MIN.
90
0.8
2.4
100
MAX.
UNIT
V
V
nA
CONDITIONS.
I
D
=0.1mA, V
GS
=0V
ID=0.1mA, V
DS
= V
GS
V
GS
=± 20V, V
DS
=0V
V
DS
=90V, V
GS
=0V
V
DS
=72V, V
GS
=0V,
T=125°C
V
DS
=25 V, V
GS
=10V
V
GS
=10V,I
D
=5mA
V
DS
=25V,I
D
=10mA
1
µA
100 (2)
µA
10
250
2
6.5
3
0.65
0.3
0.5
0.35
0.5
mA
mS
pF
pF
pF
ns
ns
ns
ns
I
D(on)
R
DS(on)
Forward Transconductance (1)( g
fs
2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance
(2)
Turn-On Delay Time (2)(3)(4)
Rise Time (2)(3)(4)
Turn-Off Delay Time (2)(3)(4)
Fall Time (2)(3)(4)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
=25 V, V
GS
=0V
f=1MHz
V
DD
≈25V,
I
D
=5mA
3-358
(
1

ZVN1409ASTZ Related Products

ZVN1409ASTZ ZVN1409ASTOB ZVN1409ASTOA
Description MOSFET N-CH 90V 0.01A TO92-3 mosfet N-chan 90v to92-3 MOSFET N-CH 90V 0.01A TO92-3
FET type N channel - N channel
technology MOSFET (metal oxide) - MOSFET (metal oxide)
Drain-source voltage (Vdss) 90V - 90V
Current - Continuous Drain (Id) at 25°C 10mA(Ta) - 10mA(Ta)
Drive voltage (maximum Rds On, minimum Rds On) 10V - 10V
Rds On (maximum value) when different Id, Vgs 250 ohms @ 5mA, 10V - 250 ohms @ 5mA, 10V
Vgs (th) (maximum value) when different Id 2.4V @ 100µA - 2.4V @ 100µA
Vgs (maximum value) ±20V - ±20V
Input capacitance (Ciss) at different Vds (maximum value) 6.5pF @ 25V - 6.5pF @ 25V
Power dissipation (maximum) 625mW(Ta) - 625mW(Ta)
Operating temperature -55°C ~ 150°C(TJ) - -55°C ~ 150°C(TJ)
Installation type Through hole - Through hole
Supplier device packaging E-Line (TO-92 compatible) - E-Line (TO-92 compatible)
Package/casing E-Line-3 - E-Line-3
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