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BUK761R7-40E,118

Description
MOSFET N-CH 40V 120A D2PAK
CategoryDiscrete semiconductor    The transistor   
File Size713KB,13 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Download Datasheet Parametric Compare View All

BUK761R7-40E,118 Overview

MOSFET N-CH 40V 120A D2PAK

BUK761R7-40E,118 Parametric

Parameter NameAttribute value
Brand NameNexperia
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Manufacturer packaging codeSOT404
Reach Compliance Codenot_compliant
Is SamacsysN
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)801 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage40 V
Maximum drain current (ID)120 A
Maximum drain-source on-resistance0.0016 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)1306 A
GuidelineAEC-Q101; IEC-60134
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
BUK761R7-40E
19 May 2016
N-channel TrenchMOS standard level FET
Product data sheet
1. General description
Standard level N-channel MOSFET in a SOT404A package using TrenchMOS
technology. This product has been designed and qualified to AEC Q101 standard for use
in high performance automotive applications.
2. Features and benefits
AEC Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with V
GS(th)
rating of greater than 1 V at 175 °C
3. Applications
12 V Automotive systems
Electric and electro-hydraulic power steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
25 °C ≤ T
j
≤ 175 °C
V
GS
= 10 V; T
mb
= 25 °C;
Fig. 2
T
mb
= 25 °C;
Fig. 1
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 11
I
D
= 25 A; V
DS
= 32 V; V
GS
= 10 V;
Fig. 13; Fig. 14
[1]
Continuous current is limited by package.
[1]
Min
-
-
-
Typ
-
-
-
Max
40
120
324
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
-
1.32
1.6
Dynamic characteristics
Q
GD
gate-drain charge
-
34.7
-
nC

BUK761R7-40E,118 Related Products

BUK761R7-40E,118 934066432118
Description MOSFET N-CH 40V 120A D2PAK MOSFET N-CH 40V 120A D2PAK
package instruction SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant compliant
Is Samacsys N N
Other features AVALANCHE RATED AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas) 801 mJ 801 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 40 V 40 V
Maximum drain current (ID) 120 A 120 A
Maximum drain-source on-resistance 0.0016 Ω 0.0016 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 R-PSSO-G2
Number of components 1 1
Number of terminals 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 1306 A 1306 A
Guideline AEC-Q101; IEC-60134 AEC-Q101; IEC-60134
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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