FDB9406-F085 N-Channel PowerTrench® MOSFET
FDB9406-F085
40 V, 110 A, 1.8 mΩ
Features
N-Channel PowerTrench
®
MOSFET
D
D
Typ R
DS(on)
= 1.31mΩ at V
GS
= 10V, I
D
= 80A
Typ Q
g(tot)
= 107nC at V
GS
= 10V, I
D
= 80A
UIS Capability
RoHS Compliant
Qualified to AEC Q101
G
G
S
S
TO-263
FDB SERIES
Applications
Automotive Engine Control
Powertrain Management
Solenoid and Motor Drivers
Electronic Steering
Integrated Starter/Alternator
Distributed Power Architectures and VRM
Primary Switch for 12V Systems
MOSFET Maximum Ratings
T
J
= 25°C unless otherwise noted.
Symbol
V
DSS
Drain to Source Voltage
V
GS
I
D
E
AS
P
D
R
θJC
R
θJA
Gate to Source Voltage
Drain Current - Continuous (V
GS
=10) (Note 1)
Pulsed Drain Current
Single Pulse Avalanche Energy
Power Dissipation
Derate above 25
o
C
Parameter
Ratings
40
±20
T
C
= 25°C
T
C
= 25°C
(Note 2)
110
See Figure4
174
176
1.18
-55 to + 175
0.85
(Note 3)
43
Units
V
V
A
mJ
W
W/
o
C
o
C
o
C/W
o
C/W
T
J
, T
STG
Operating and Storage Temperature
Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
FDB9406
Device
FDB9406-F085
Package
D2-PAK(TO-263)
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
Notes:
1: Current is limited by bondwire configuration.
2: Starting T
J
= 25°C, L = 0.045mH, I
AS
= 88A, V
DD
= 40V during inductor charging and V
DD
= 0V during time in avalanche.
3:
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins.
R
θJC
is guaranteed by design while
R
θJA
is determined by the user's board design. The maximum
rating presented here is based on mounting on a 1 in
2
pad of 2oz copper.
©2013
Semiconductor
Component Industries, LLC
August-2017,
Rev. 3
1
Publication Order Number:
FDB9406-F085/D
FDB9406-F085 N-Channel PowerTrench® MOSFET
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
B
VDSS
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
I
D
= 250μA, V
GS
= 0V
V
DS
= 40V,
V
GS
= 0V
V
GS
= ±20V
T
J
=
T
J
=
40
-
4)
-
-
-
-
-
-
-
1
1
±100
V
μA
mA
nA
25
o
C
175
o
C(Note
On Characteristics
V
GS(th)
R
DS(on)
Gate-to-Source Threshold Voltage
Drain-to-Source On Resistance
V
GS
= V
DS
, I
D
= 250μA
I
D
= 80A,
V
GS
= 10V
T
J
=
T
J
=
2.0
-
4)
-
2.83
1.31
2.2
4.0
1.8
2.8
V
mΩ
mΩ
25
o
C
175
o
C(Note
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Q
g(ToT)
Q
g(th)
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate-to-Source Gate Charge
Gate-to-Drain “Miller“ Charge
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
f = 1MHz
V
GS
= 0 to 10V
V
GS
= 0 to 2V
V
DD
= 32V
I
D
= 80A
-
-
-
-
-
-
-
-
7710
2015
140
2.7
107
14
33
18
-
-
-
-
138
19
-
-
pF
pF
pF
Ω
nC
nC
nC
nC
Switching Characteristics
t
on
t
d(on)
t
r
t
d(off)
t
f
t
off
Turn-On Time
Turn-On Delay
Rise Time
Turn-Off Delay
Fall Time
Turn-Off Time
V
DD
= 20V, I
D
= 80A,
V
GS
= 10V, R
GEN
= 6Ω
-
-
-
-
-
-
-
32
81
50
23
-
160
-
-
-
-
93
ns
ns
ns
ns
ns
ns
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Note:
4: The maximum value is specified by design at T
J
= 175°C. Product is not tested to this condition in production.
Source-to-Drain Diode Voltage
Reverse-Recovery Time
Reverse-Recovery Charge
I
SD
= 80A, V
GS
= 0V
I
F
= 80A, dI
SD
/dt = 100A/μs,
V
DD
=32V
-
-
-
-
85
122
1.25
110
160
V
ns
nC
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FDB9406-F085 N-Channel PowerTrench® MOSFET
Typical Characteristics
POWER DISSIPATION MULTIPLIER
1.2
I
D
, DRAIN CURRENT (A)
1.0
0.8
0.6
0.4
0.2
0.0
300
250
200
150
100
50
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE(
o
C)
200
CURRENT LIMITED
BY PACKAGE
V
GS
= 10V
CURRENT LIMITED
BY SILICON
0
25
50
75
100
125
150
o
C)
T
C
, CASE TEMPERATURE(
175
Figure 1. Normalized Power Dissipation vs. Case
Temperature
DUTY CYCLE - DESCENDING ORDER
D = 0.50
0.20
0.10
0.05
0.02
0.01
Figure 2. Maximum Continuous Drain Current vs.
Case Temperature
NORMALIZED THERMAL
IMPEDANCE, Z
θ
JC
1
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJA
x R
θJA
+ T
C
SINGLE PULSE
0.01
-5
10
10
-4
Figure 3. Normalized Maximum Transient Thermal Impedance
1000
V
GS
= 10V
10
10
10
t, RECTANGULAR PULSE DURATION(s)
-3
-2
-1
10
0
10
1
I
DM
,
PEAK CURRENT (A)
100
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
2
175 - T
C
150
SINGLE PULSE
10
-5
10
10
-4
10
10
10
t, RECTANGULAR PULSE DURATION(s)
-3
-2
-1
10
0
10
1
Figure 4. Peak Current Capability
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FDB9406-F085 N-Channel PowerTrench® MOSFET
Typical Characteristics
1000
I
D
, DRAIN CURRENT (A)
1000
I
AS
, AVALANCHE CURRENT (A)
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
100
100us
100
STARTING T
J
= 25
o
C
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
1ms
SINGLE PULSE
TJ
= MAX RATED
TC
= 25oC
10
STARTING T
J
= 150
o
C
1
10ms
100ms
0.1
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
1
1E-3
0.01
0.1
1
10
100
1000
t
AV
, TIME IN AVALANCHE (ms)
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to
ON Semiconductor
Application Notes AN7514
and AN7515
Figure 6. Unclamped Inductive Switching
Capability
300
I
S
, REVERSE DRAIN CURRENT (A)
300
250
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 5V
T
J
= 175
o
C
I
D
, DRAIN CURRENT (A)
100
V
GS
= 0 V
200
150
T
J
= 25
o
C
T
J
= 175
o
C
T
J
= 25
o
C
100
T
J
= -55
o
C
10
50
0
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
6
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Forward Diode Characteristics
350
350
I
D
, DRAIN CURRENT (A)
250
200
150
5V
V
GS
15V Top
10V
8V
7V
6V
5.5V
5V Bottom
I
D
, DRAIN CURRENT (A)
300
300
250
200
150
100
50
0
0.0
80
μ
s PULSE WIDTH
Tj=175
o
C
5V
100
50
0
0.0
80
μ
s PULSE WIDTH
Tj=25
o
C
V
GS
15V
5.5V
Top
10V
8V
7V
6V
5.5V
5V Bottom
0.4
0.8
1.2
1.6
2.0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.4
0.8
1.2
1.6
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2.0
Figure 9. Saturation Characteristics
Figure 10. Saturation Characteristics
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FDB9406-F085 N-Channel PowerTrench® MOSFET
Typical Characteristics
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
20
r
DS(on)
, DRAIN TO SOURCE
ON-RESISTANCE (
m
Ω
)
I
D
=
80A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-80
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
16
12
8
4
0
T
J
= 25
o
C
T
J
= 175
o
C
I
D
= 80A
V
GS
= 10V
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE
(
o
C
)
200
Figure 11. R
DSON
vs. Gate Voltage
Figure 12. Normalized R
DSON
vs. Junction
Temperature
1.2
1.2
NORMALIZED GATE
THRESHOLD VOLTAGE
1.0
0.8
0.6
0.4
0.2
-80
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
V
GS
=
V
DS
I
D
= 250
μ
A
I
D
= 1mA
1.1
1.0
0.9
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE(
o
C)
200
0.8
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
200
Figure 13. Normalized Gate Threshold Voltage vs.
Temperature
Figure 14. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
V
GS
, GATE TO SOURCE VOLTAGE(V)
10000
10
I
D
= 80A
CAPACITANCE (pF)
V
DD
= 16V
V
DD
= 20V
V
DD
= 24V
C
iss
8
6
4
2
0
1000
C
oss
100
f = 1MHz
V
GS
= 0V
C
rss
10
0.1
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE
(
V
)
100
0
20
40
60
80
Q
g
,
GATE CHARGE(nC)
100
120
Figure 15. Capacitance vs. Drain to Source
Voltage
Figure 16. Gate Charge vs. Gate to Source
Voltage
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