75Ω SPST RF Switch
1MHz to 3500MHz
Description
The F2911 is a high reliability, low insertion loss, 75Ω SPST RF
switch designed for a multitude of wireless and RF applications.
This device covers a broad frequency range from 1MHz to
3500MHz. In addition to providing low insertion loss, the F2911
also delivers excellent linearity and isolation performance while
providing a 75Ω termination on one port in the isolation mode.
The F2911 uses a single positive supply voltage supporting either
3.3V or 1.8V control logic.
Datasheet
F2911
Features
Low insertion loss: 0.33dB at 1200MHz
High isolation: 53dB at 1200MHz
Supply voltage: +2.7V to +5.5V
1.8V and 3.3V compatible control logic
-40°C to +105°C operating temperature range
2mm x 2mm, 8-pin DFN package
Competitive Advantage
The F2911 provides broadband RF performance to support the
CATV market along with high power handling, and high isolation.
Low insertion loss
High isolation
Excellent linearity
Extended temperature range
Block Diagram
Figure 1.
Block Diagram
V1
V
DD
Control
Circuit
Typical Applications
CATV Infrastructure
CATV Set-Top Boxes
CATV Satellite Modems
Data Network Equipment
Fiber Networks
RF2
RF1
75Ω
© 2017 Integrated Device Technology, Inc.
1
Rev O, September 21, 2017
F2911 Datasheet
Pin Assignments
Figure 2.
Pin Assignments for 2mm x 2mm x 0.9mm 8-DFN – Top View
RF2
V1
V
DD
RF1
8
EP
7
6
5
F2911
1
NC
2
GND
3
GND
4
NC
Pin Descriptions
Table 1.
Pin Descriptions
Pin
1, 4
2, 3
5
6
7
8
Name
NC
GND
RF1
V
DD
V1
RF2
EP
Function
No internal connection. This pin may be connected to the exposed paddle and can be grounded.
Ground. This pin is internally connected to the ground paddle. Ground this pin as close to the device as
possible.
RF1 port. This pin is matched to 75 in the insertion loss state only. If this pin is not 0V DC, then an
external coupling capacitor must be used.
Power supply. Bypass to GND with capacitors as shown in the Figure 16 as close as possible to pin.
Logic control pin. See Table 7 for proper logic setting.
RF2 port. Matched to 75Ω. If this pin is not 0V DC, then an external coupling capacitor must be used.
Exposed pad. This pad is internally connected to GND. Solder this exposed pad to a PCB pad that uses
multiple ground vias to provide heat transfer out of the device and into the PCB ground planes. These
multiple ground vias are also required to achieve the specified RF performance.
© 2017 Integrated Device Technology, Inc.
2
Rev O, September 21, 2017
F2911 Datasheet
Absolute Maximum Ratings
Stresses beyond those listed below may cause permanent damage to the device. Functional operation of the device at these or any other
conditions beyond those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
Table 2.
Absolute Maximum Ratings
Parameter
V
DD
to GND
V1 to GND
RF1, RF2 to GND
RF Input Power, CW
Z
S
= Z
L
= 75Ω
T
EP
= 25°C
[a]
V
DD
= +3.3V
RF1 or RF2 as input
(Insertion loss state)
RF1 as input
(Isolation state)
RF2 as input
(Isolation state)
RF1 or RF2 as input
(Insertion loss state)
RF1 as input
(Isolation state)
RF2 as input
(Isolation state)
Symbol
V
DD
V
LOGIC
V
RF
P
RFCW12
P
RF1CW_ISO
P
RF2CW_ISO
P
RFPK12
P
RF1PK_ISO
P
RF2PK_ISO
T
JMAX
T
STOR
T
LEAD
V
ESDHBM
V
ESDCDM
Minimum
-0.3
-0.3
-0.3
Maximum
+6.0
Lower of
(V
DD
+ 0.3V, 3.6V)
+0.3
31
21
28
34
24
31
+140
Units
V
V
V
dBm
RF Input Power, Peak
Z
S
= Z
L
= 75Ω
T
EP
= 25°C
[a], [b]
V
DD
= +3.3V
Maximum Junction Temperature
Storage Temperature Range
Lead Temperature (soldering, 10s)
ElectroStatic Discharge – HBM
(JEDEC/ESDA JS-001-2012)
ElectroStatic Discharge – CDM
(JEDEC 22-C101F)
a.
b.
dBm
°C
°C
°C
V
V
-65
+150
+260
2000
(Class 2)
1000
(Class C3)
T
EP
= Temperature at the exposed paddle (see Table 3).
5% duty cycle of a 4.6ms period.
© 2017 Integrated Device Technology, Inc.
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Rev O, September 21, 2017
F2911 Datasheet
Recommended Operating Conditions
Table 3.
Recommended Operating Conditions
Parameter
Power Supply Voltage
Operating Temperature Range
RF Frequency Range
Symbol
V
DD
T
EP
f
RF
Condition
Exposed paddle temperature
Min
2.7
-40
1
Typical
RF1 or RF2 as the input
T
EP
= 85ºC
(Insertion loss state)
T
EP
= 105ºC
RF1 as the input
T
EP
= 85ºC
RF Input CW Power
P
RFCW
dBm
(Isolation state)
(Non-Switched)
[a]
T
EP
= 105ºC
T
EP
= 85ºC
RF2 as the input
(Isolation state)
T
EP
= 105ºC
RF1 or RF2 as the input
T
EP
= 85ºC
(Insertion loss state)
T
EP
= 105ºC
RF1 as the input
T
EP
= 85ºC
RF Input Peak Power
P
RFPK
dBm
[a] , [b]
(Isolation state)
(Non-Switched)
T
EP
= 105ºC
T
EP
= 85ºC
RF2 as the input
(Isolation state)
T
EP
= 105ºC
Applied to RF2 and
T
EP
= 85ºC
22
RF Continuous
switching between
Input Power
P
RFSW
dBm
insertion loss to isolation T = 105ºC
[a]
19
EP
(RF Hot Switching CW)
state
RF1/2 Port Impedance
Z
RFx
Insertion loss state
75
Ω
RF2 Port Impedance
Z
RFx
Isolation state
75
Ω
a. Levels based on: V
DD
= +2.7V to +5.5V, 1MHz ≤ f
RF
≤ 3500MHz, Z
S
= Z
L
= 75Ω. See Figure 3 for power handling derating vs.
RF frequency.
b. 5% duty cycle of a 4.6ms period.
Figure 3.
Maximum RF Input Operating Power vs. RF Frequency (Z
S
= Z
L
= 75Ω)
40
Max
5.5
+105
3500
28
25
18
15
25
22
31
28
21
18
28
25
Units
V
O
C
MHz
Maximum RF Input Power (dBm)
35
30
25
20
Cond 1: Maximum Continuous Operating CW Power, RF1 or RF2 Port, I.L. State ,T
EP
= 105 C
Cond 2: Maximum Continuous Operating CW Power, RF2 Port, Isolation State, T
EP
= 105 C
Cond 3: Maximum Continuous Operating Hot Switching CW Power, RF2 Port, T
EP
= 105 C
Cond 1
Cond 2
15
10
5
Cond 3
0
-5
0.01
0.1
1
10
100
1000
Frequency (MHz)
© 2017 Integrated Device Technology, Inc.
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Rev O, September 21, 2017
F2911 Datasheet
Electrical Characteristics
Table 4.
Electrical Characteristics
See the F2911 Typical Application Circuit. Specifications apply when operated with V
DD
= +3.3V, T
EP
= +25°C, f
RF
= 1000MHz,
driven port = RF2, P
IN
= 0dBm, Z
S
= Z
L
= 75Ω. PCB board trace and connector losses are de-embedded unless otherwise noted.
Parameter
Logic Input High
Logic Input Low
Logic Current
DC Current
Symbol
V
IH
V
IL
I
IH,
I
IL
I
DD
Condition
+2.7V ≤ V
DD
≤ +5.5V
Min
1.1
[a]
-0.3
[b]
-1
Typical
Max
Lower of
(V
DD
, 3.6)
0.6
+1
304
0.44
Units
V
V
µA
µA
V
DD
= 3.3V
190
V
DD
= 5.0V
230
[c]
1MHz ≤ f
RF
≤ 50MHz
0.24
50MHz < f
RF
≤ 250MHz
0.26
250MHz < f
RF
≤ 750MHz
0.29
750MHz < f
RF
≤ 1000MHz
0.31
Insertion Loss
IL
1000MHz < f
RF
≤ 1200MHz
0.33
1200MHz < f
RF
≤ 1800MHz
[c]
0.39
1800MHz < f
RF
≤ 2000MHz
0.39
2000MHz < f
RF
≤ 3500MHz
0.89
1MHz ≤ f
RF
≤ 50MHz
75
84
50MHz < f
RF
≤ 250MHz
70
250MHz < f
RF
≤ 750MHz
59
750MHz < f
RF
≤ 1000MHz
55
Isolation
ISO
1000MHz < f
RF
≤ 1200MHz
53
1200MHz < f
RF
≤ 1800MHz
46
1800MHz < f
RF
≤ 2000MHz
45
2000MHz < f
RF
≤ 3500MHz
35
1MHz ≤ f
RF
≤ 50MHz
33
50MHz < f
RF
≤ 250MHz
32
250MHz < f
RF
≤ 750MHz
27
750MHz < f
RF
≤ 1000MHz
25
RF1, RF2 Return Loss
[d]
RF
RL
(Insertion Loss State)
1000MHz < f
RF
≤ 1200MHz
23
1200MHz < f
RF
≤ 1800MHz
20
1800MHz < f
RF
≤ 2000MHz
20
2000MHz < f
RF
≤ 3500MHz
10
1MHz ≤ f
RF
≤ 50MHz
27
50MHz < f
RF
≤ 250MHz
27
250MHz < f
RF
≤ 750MHz
25
750MHz < f
RF
≤ 1000MHz
23
RF2 Return Loss
[d]
RF
RLISO
(Isolation State)
1000MHz < f
RF
≤ 1200MHz
22
1200MHz < f
RF
≤ 1800MHz
20
1800MHz < f
RF
≤ 2000MHz
20
2000MHz < f
RF
≤ 3500MHz
11
a. Items in min/max columns in
bold italics
are guaranteed by test (GBT).
b. Items in min/max columns that are not bold italics are guaranteed by design characterization (GBDC).
c. Maximum specification limit is GBT at 50MHz and 1.8GHz, and it is GBDC over the whole frequency range.
d. Return loss includes mismatch effects of the Evaluation Kit PCB and RF connectors.
dB
0.55
dB
dB
dB
© 2017 Integrated Device Technology, Inc.
5
Rev O, September 21, 2017
RF/Wirelessly
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