IPA95R750P7
MOSFET
950VCoolMOSªP7SJPowerDevice
Thelatest950VCoolMOS™P7seriessetsanewbenchmarkin950V
superjunctiontechnologiesandcombinesbest-in-classperformancewith
stateoftheartease-of-use,resultingfromInfineon’sover18years
pioneeringsuperjunctiontechnologyinnovation.
PG-TO220FP
Features
•Best-in-classFOMR
DS(on)
*E
oss
;reducedQ
g
,C
iss
,andC
oss
•Best-in-classV
(GS)th
of3VandsmallestV
(GS)th
variationof±0.5V
•IntegratedZenerDiodeESDprotection
•Best-in-classCoolMOS™qualityandreliability
•Fullyoptimizedportfolio
Benefits
•Best-in-classperformance
•Enablinghigherpowerdensitydesigns,BOMsavingsandlower
assemblycosts
•Easytodriveandtoparallel
•BetterproductionyieldbyreducingESDrelatedfailures
•Lessproductionissuesandreducedfieldreturns
•Easytoselectrightpartsforfinetuningofdesigns
Gate
Pin 1
*2
Drain
Pin 2
*1
*1: Internal body diode
*2: Integrated ESD diode
Source
Pin 3
Potentialapplications
RecommendedforflybacktopologiesforLEDLighting,lowpower
ChargersandAdapters,SmartMeter,AUXpowerandIndustrialpower.
AlsosuitableforPFCstageinConsumerandSolarapplications.
ProductValidation:Fullyqualifiedacc.JEDECforIndustrialApplications
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseperatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
V
DS
@ T
j=25°C
R
DS(on),max
Q
g,typ
I
D
E
oss
@ 500V
V
GS(th),typ
ESD class (HBM)
Type/OrderingCode
IPA95R750P7
Value
950
0.75
23
9
1.9
3
2
Package
PG-TO 220 FullPAK
Unit
V
Ω
nC
A
µJ
V
-
Marking
95R750P7
RelatedLinks
see Appendix A
Final Data Sheet
1
Rev.2.2,2018-07-24
950VCoolMOSªP7SJPowerDevice
IPA95R750P7
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
2
Rev.2.2,2018-07-24
950VCoolMOSªP7SJPowerDevice
IPA95R750P7
1Maximumratings
atT
j
=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Continuous drain current
1)
Pulsed drain current
2)
Avalanche energy, single pulse
Avalanche energy, repetitive
Application (Flyback) relevant
avalanche current, single pulse
3)
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
Storage temperature
Operating junction temperature
Mounting torque
Continuous diode forward current
Diode pulse current
2)
Reverse diode dv/dt
4)
Maximum diode commutation speed
Insulation withstand voltage
Symbol
I
D
I
D,pulse
E
AS
E
AR
I
AS
dv/dt
V
GS
V
GS
P
tot
T
stg
T
j
-
I
S
I
S,pulse
dv/dt
di
F
/dt
V
ISO
Values
Min.
-
-
-
-
-
-
-
-20
-30
-
-55
-55
-
-
-
-
-
-
Typ.
-
-
-
-
-
4.0
-
-
-
-
-
-
-
-
-
-
-
-
Max.
9
5.5
27
18
0.22
-
100
20
30
28
150
150
50
3.8
27
1
50
2500
Unit
A
A
mJ
mJ
A
V/ns
V
V
W
°C
°C
A
A
V/ns
A/µs
V
Note/TestCondition
T
C
=25°C
T
C
=100°C
T
C
=25°C
I
D
=1.1A; V
DD
=50V; see table 10
I
D
=1.1A; V
DD
=50V; see table 10
measured with standard leakage
inductance of transformer of 10µH
V
DS
=0...400V
static;
AC (f>1 Hz)
T
C
=25°C
-
-
T
C
=25°C
T
C
=25°C
V
DS
=0...400V,I
SD
<=2.2A,T
j
=25°C
see table 8
V
DS
=0...400V,I
SD
<=2.2A,T
j
=25°C
see table 8
V
rms
,T
C
=25°C,t=1min
Ncm M2.5 screws
1)
2)
Limited by T
j,max
. Maximum Duty Cycle D = 0.5; IPAK equivalent.
Pulse width t
p
limited by T
j,max
3)
For further explanation please read AN - CoolMOS
TM
700V P7 & 950V P7
4)
Identical low side and high side switch with identical R
G
Final Data Sheet
3
Rev.2.2,2018-07-24
950VCoolMOSªP7SJPowerDevice
IPA95R750P7
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Thermal resistance, junction - case
Symbol
R
thJC
Values
Min.
-
-
-
-
Typ.
-
-
-
-
Max.
4.4
62
-
260
Unit
Note/TestCondition
°C/W -
°C/W leaded
°C/W -
°C
1.6mm (0.063 in.) from case for 10s
Thermal resistance, junction - ambient
R
thJA
Thermal resistance, junction - ambient
R
thJA
for SMD version
Soldering temperature, wavesoldering
only allowed at leads
T
sold
Final Data Sheet
4
Rev.2.2,2018-07-24
950VCoolMOSªP7SJPowerDevice
IPA95R750P7
3Electricalcharacteristics
atT
j
=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Symbol
V
(BR)DSS
V
(GS)th
I
DSS
I
GSS
R
DS(on)
R
G
Values
Min.
950
2.5
-
-
-
-
-
-
Typ.
-
3
-
10
-
0.64
1.429
1
Max.
-
3.5
1
-
1000
0.75
-
-
Unit
V
V
µA
nA
Ω
Ω
Note/TestCondition
V
GS
=0V,I
D
=1mA
V
DS
=V
GS
,I
D
=0.22mA
V
DS
=950V,V
GS
=0V,T
j
=25°C
V
DS
=950V,V
GS
=0V,T
j
=150°C
V
GS
=20V,V
DS
=0V
V
GS
=10V,I
D
=4.5A,T
j
=25°C
V
GS
=10V,I
D
=4.5A,T
j
=150°C
f=250kHz,opendrain
Table5Dynamiccharacteristics
Parameter
Input capacitance
Output capacitance
Effective output capacitance, energy
related
1)
Effective output capacitance, time
related
2)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
C
iss
C
oss
C
o(er)
C
o(tr)
t
d(on)
t
r
t
d(off)
t
f
Values
Min.
-
-
-
-
-
-
-
-
Typ.
712
11
18
182
8
7
46
8
Max.
-
-
-
-
-
-
-
-
Unit
pF
pF
pF
pF
ns
ns
ns
ns
Note/TestCondition
V
GS
=0V,V
DS
=400V,f=250kHz
V
GS
=0V,V
DS
=400V,f=250kHz
V
GS
=0V,V
DS
=0...400V
I
D
=constant,V
GS
=0V,V
DS
=0...400V
V
DD
=400V,V
GS
=13V,I
D
=4.5A,
R
G
=10.2Ω;seetable9
V
DD
=400V,V
GS
=13V,I
D
=4.5A,
R
G
=10.2Ω;seetable9
V
DD
=400V,V
GS
=13V,I
D
=4.5A,
R
G
=10.2Ω;seetable9
V
DD
=400V,V
GS
=13V,I
D
=4.5A,
R
G
=10.2Ω;seetable9
Table6Gatechargecharacteristics
Parameter
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Symbol
Q
gs
Q
gd
Q
g
V
plateau
Values
Min.
-
-
-
-
Typ.
3
7
23
4.4
Max.
-
-
-
-
Unit
nC
nC
nC
V
Note/TestCondition
V
DD
=760V,I
D
=4.5A,V
GS
=0to10V
V
DD
=760V,I
D
=4.5A,V
GS
=0to10V
V
DD
=760V,I
D
=4.5A,V
GS
=0to10V
V
DD
=760V,I
D
=4.5A,V
GS
=0to10V
1)
2)
C
o(er)
isafixedcapacitancethatgivesthesamestoredenergyasC
oss
whileV
DS
isrisingfrom0to400V
C
o(tr)
isafixedcapacitancethatgivesthesamechargingtimeasC
oss
whileV
DS
isrisingfrom0to400V
Final Data Sheet
5
Rev.2.2,2018-07-24
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