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2EDF7275FXUMA1

Description
DRIVER IC
CategoryAnalog mixed-signal IC    Drivers and interfaces   
File Size243KB,2 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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2EDF7275FXUMA1 Overview

DRIVER IC

2EDF7275FXUMA1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionSOP, SOP16,.25
Reach Compliance Codecompliant
Factory Lead Time1 week
Samacsys DescriptionGate Drivers DRIVER IC
high side driverYES
Input propertiesSTANDARD
Interface integrated circuit typeHALF BRIDGE BASED MOSFET DRIVER
JESD-30 codeR-PDSO-G16
length10 mm
Number of functions1
Number of terminals16
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeSOP16,.25
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum seat height1.75 mm
Maximum supply voltage3.5 V
Minimum supply voltage3 V
Nominal supply voltage3.3 V
Supply voltage 1-max20 V
Mains voltage 1-minute4.5 V
Supply voltage1-Nom12 V
surface mountYES
Temperature levelAUTOMOTIVE
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Disconnect time0.044 µs
connection time0.044 µs
width4 mm
Product brief
EiceDRIVER™ 2EDF7275F and 2EDF7175F
Fast, robust, dual-channel, functional isolated MOSFET gate drivers
with accurate and stable timing
Overview
The EiceDRIVER™ 2EDF7275F is the perfect fit for robust and stable operation for primary
side control of high- and low-side MOSFETs in noisy high-power switching environments.
The strong 4 A/8 A source/sink dual-channel gate drivers provide a fast turn on/off
when driving high- and medium-voltage MOSFETs such as CoolMOS™ or OptiMOS™.
Both output channels are individually isolated and can be flexibly deployed as floating
gate drivers with very high 150 V/ns CMTI (Common Mode Noise Immunity). The VDDi
input supply supports a wide voltage range SLDO mode to save on-board LDOs. For
slower switching or driving smaller MOSFETs, a 1 A/2 A peak current product variant,
the EiceDRIVER™ 2EDF7175F, is available in the DSO-16 narrow body package with 4 mm
creepage distance.
Device overview
VDDI
SLDON
INA
INB
DISABLE
NC
GNDI
Dead time
control
TX
Control
logic
UVLO
SLDO
TX
Input-to-output
isolation
UVLO
RX
Logic
VDDA
OUTA
GNDA
VDDB
OUTB
GNDB
Channel-to-channel
isolation
UVLO
RX
Logic
EiceDRIVER™ 2EDF7275F and 2EDF7175F
block diagram
Product key features
Fast power switching with accurate timing
Available with 4 A/8 A and 1 A/2 A source/sink currents
Propagation delay typ. 37 ns with 3 ns
Product benefits
Power efficiency and high resolution PWM control
Lower switching losses in half-bridges due to fast
and accurate turn on/off
Perfect match for a new digitally controlled high
resolution PWM control
Cooler package at smaller form factor
Replaces classic bulky PT pulse transformers or
costly high speed data couplers and discrete drivers
Cooler gate driver package
Eliminates need for two costly protection diodes
Protection and safe operation
Protection against shoot-through (EOS)
Supports decoupling and limits the di/dt
switching and ringing noise
Reliable CT coreless transformer PWM signal chain
Flexible assignment of any driver channel
HS+LS, HS+HS, LS+LS or 2x Imax on 1xHS
Floating gate drive and regulatory safety
Functional isolation for primary or secondary
side control
System benefits
channel-to-channel mismatch
Max. delay variation ~14 ns
Optimized for area and low cost system BOM
Isolation and driver in one package
Less power dissipation due to low on-resistance
Output stages with 5 A reverse current capability
Robust against switching noise
Floating drivers are able to handle large inductive
voltage over- and undershoots
Very high common mode transient immunity
CMTI > 150 V/ns
Undervoltage lockout function for switch protection
Output-to-output channel isolation
Functional level galvanic isolation
Input-to-output channel isolation
Functional galvanic isolation
Enabling higher power stage efficiency and higher
power density designs
Improving long term competitive cost position,
integration and mass manufacturability
Improved end-product lifetime
by improved safe
operation of power switches
Lower EMI
by ground isolation, driver proximity to
MOSFETs or the use of 4-pin Kelvin source MOSFETs
Meeting requirements to build isolated AC-DC,
DC-DC half-bridge topologies
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