VS-40TPS12LHM3, VS-40TPS12ALHM3
www.vishay.com
Vishay Semiconductors
Thyristor High Voltage, Phase Control SCR, 40 A
FEATURES
2
(A)
• Low I
GT
parts available
• AEC-Q101 qualified meets JESD 201 class 1A
whisker test
• Flexible solution for reliable AC power
rectification
1
2
3
TO-247AD 3L
1 (K) (G) 3
• Easy control peak current at charger power up to reduce
passive / electromechanical components
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
I
T(AV)
V
DRM
/V
RRM
V
TM
I
GT
T
J
Package
Circuit configuration
35 A
1200 V
1.45 V
150 mA
-40 °C to +125 °C
TO-247AD 3L
Single SCR
APPLICATIONS
• On-board and off-board EV / HEV battery chargers
• Renewable energy inverters
DESCRIPTION
The VS-40TPS... high voltage series of silicon controlled
rectifiers are specifically designed for medium power
switching and phase control applications.
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
RMS
V
RRM
/V
DRM
I
TSM
V
T
dv/dt
di/dt
T
J
40 A, T
J
= 25 °C
TEST CONDITIONS
Sinusoidal waveform
VALUES
35
55
1200
600
1.45
1000
100
-40 to +125
UNITS
A
V
A
V
V/μs
A/μs
°C
VOLTAGE RATINGS
PART NUMBER
VS-40TPS12ALHM3
VS-40TPS12LHM3
V
RRM
/ V
DRM
, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
1200
1200
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
1300
1300
I
RRM
/ I
DRM
AT 125 °C
mA
10
Revision: 22-Feb-18
Document Number: 95925
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-40TPS12LHM3, VS-40TPS12ALHM3
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
Maximum continuous RMS
on-state current as AC switch
Maximum peak, one-cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum peak on-state voltage
Maximum rate of rise of turned-on current
Maximum holding current
Maximum latching current
Maximum reverse and direct leakage current
Maximum rate of rise of off-state voltage
40TPS12A
Maximum rate of rise of off-state voltage
40TPS12
SYMBOL
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
I
2
t
V
T(TO)1
V
T(TO)2
r
t1
r
t2
V
TM
di/dt
I
H
I
L
I
RRM/
I
DRM
110 A, T
J
= 25 °C
T
J
= 25 °C
Anode supply = 6 V, resistive load, initial T
J
= 1 A, I
T
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 25 °C
T
J
= 25 °C
T
J
= 125 °C
V
R
= rated V
RRM
/V
DRM
T
J
= 125 °C
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
Initial
T
J
= T
J
max.
TEST CONDITIONS
T
C
= 79 °C, 180° conduction half sine wave
VALUES UNITS
35
55
500
600
1250
1760
17 600
1.02
1.23
9.74
7.50
1.85
100
300
350
0.5
10
500
dv/dt
T
J
= T
J
maximum, linear to 80 % V
DRM
, R
g
- k = 100
1000
V/μs
mA
A
2
s
A
2
s
V
A
m
V
A/μs
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
SYMBOL
P
GM
P
G(AV)
I
GM
-V
GM
T
J
= -40 °C
Maximum required DC gate voltage to trigger
V
GT
T
J
= 25 °C
T
J
= 125 °C
T
J
= -40 °C
Maximum required DC gate current to trigger
I
GT
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C, for 40TPS12A
Maximum DC gate voltage not to trigger
for 40TPS12
Maximum DC gate current not to trigger
for 40TPS12
Maximum DC gate voltage not to trigger
for 40TPS12A
Maximum DC gate current not to trigger
for 40TPS12A
V
GD
T
J
= 125 °C, V
DRM
= rated value
I
GD
V
GD
T
J
= 125 °C, V
DRM
= rated value
I
GD
1
mA
6
0.15
mA
V
Anode supply = 6 V
resistive load
Anode supply = 6 V
resistive load
TEST CONDITIONS
VALUES
10
2.5
2.5
10
2.0
1.7
1.3
200
150
80
40
0.25
V
mA
V
UNITS
W
A
V
Revision: 22-Feb-18
Document Number: 95925
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-40TPS12LHM3, VS-40TPS12ALHM3
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, junction to ambient
Maximum thermal resistance, case to heat sink
Approximate weight
minimum
maximum
Case style TO-247AD 3L
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
DC operation
Mounting surface, smooth and greased
TEST CONDITIONS
VALUES
-40 to +125
0.6
40
0.2
6
0.21
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
Mounting torque
Marking device
40TPS12ALH
40TPS12LH
40TPS.. Series
R
thJC
(DC) = 0.6 °C/W
Maximum Average On-State Power Loss (W)
Maximum Allowable Case Temperature (°C)
130
120
110
60
180°
120°
90°
60°
30°
50
40
RMS limit
Conduction Angle
100
90
80
70
0
30
30°
60°
90°
120°
180°
20
Conduction angle
40TPS.. series
T
J
= 125 °C
10
0
10
20
30
40
0
5
10
15
20
25
30
35
40
Average On-State Current (A)
Fig. 1 - Current Rating Characteristics
Average On-State Current (A)
Fig. 3 - On-State Power Loss Characteristics
Maximum Average On-State Power Loss (W)
Maximum Allowable Case Temperature (°C)
130
120
110
40TPS.. series
R
thJC
(DC) = 0.6 °C/W
80
70
60
50
DC
180°
120°
90°
60°
30°
Conduction period
100
30°
90
80
70
0
10
20
30
40
50
60
60°
90°
120°
180°
DC
40 RMS limit
30
Conduction period
20
10
0
0
10
20
30
40
50
60
40TPS.. series
T
J
= 125 °C
Average On-State Current (A)
Fig. 2 - Current Rating Characteristics
Average On-State Current (A)
Fig. 4 - On-State Power Loss Characteristics
Revision: 22-Feb-18
Document Number: 95925
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-40TPS12LHM3, VS-40TPS12ALHM3
www.vishay.com
550
Vishay Semiconductors
Peak Half Sine Wave On-state Current (A)
600
550
500
450
400
350
300
40TPS.. series
Peak Half Sine Wave On-state Current (A)
500
450
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
J
= 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Maximum non repetitive surge current
vs. pulse train duration. Control of
conduction may not be maintained.
Initial T
J
= 125 °C
No voltage reapplied
Rated V
RRM
reapplied
400
350
300
250
1
40TPS.. series
10
100
250
0.01
0.1
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
100
Instantaneous On-State Current (A)
10
T
J
= 25 °C
T
J
= 125 °C
40TPS..A
series
1
0.5
1
1.5
2
Instantaneous On-State Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
100
Instantaneous
Gate
Voltage (V)
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 30
Ω
t
r
= 0.5 μs, t
p
≥ 6 μs
b) Recommended load line for
≤ 30 % rated dI/dt: 20 V, 65
Ω
t
r
= 1 μs, t
p
≥ 6 μs
10
a)
b)
T
J
= - 40 °C
(1) PGM = 100 W, t
p
= 500 μs
(2) PGM = 50 W, t
p
= 1 ms
(3) PGM = 20 W, t
p
= 2.5 ms
(4) PGM = 10 W, t
p
= 5 ms
T
J
= 50 °C
T
J
= 125 °C
1
V
GD
I
GD
(4)
(3)
(2)
(1)
40TPS..Series
Frequency limited by PG(AV)
0.1
0.001
0.01
0.1
1
10
100
1000
Instantaneous
Gate
Current (A)
Fig. 8 - Gate Characteristics
Revision: 22-Feb-18
Document Number: 95925
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-40TPS12LHM3, VS-40TPS12ALHM3
www.vishay.com
Vishay Semiconductors
(1) PGM = 100 W, t
p
= 500 μs
(2) PGM = 50 W, t
p
= 1 ms
(3) PGM = 20 W, t
p
= 2.5 ms
(4) PGM = 10 W, t
p
= 5 ms
Instantaneous
Gate
Voltage (V)
100
Rectangular gate pulse
a) Recommended load line for rated dI/dt: 20 V, 30
Ω
t
r
= 0.5 μs, t
p
≥ 6 μs
b) Recommended load line for ≤ 30 % rated dI/dt: 20 V, 65
Ω
t
r
= 1 μs, t
p
≥ 6 μs
10
40TPS..A
series
T
J
= - 40 °C
T
J
= 25 °C
T
J
= 125 °C
1
(4)
(3)
(2)
(1)
V
GD
b)
0.1
a)
Frequency limited by PG(AV)
0.1
0.0001
I
GD
0.001
0.01
1
10
100
1000
Instantaneous
Gate
Current (A)
Fig. 9 - Gate Characteristics
Transient Thermal Impedance Z
thJC
(°C/W)
1
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Steady state
value
(DC operation)
Single
pulse
40TPS..
series
0.01
0.0001
0.001
0.01
0.1
1
Square
Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance Z
thJC
Characteristics
Revision: 22-Feb-18
Document Number: 95925
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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