SST39VF040-70-4I-NHE datasheet, PDF

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SST39VF040-70-4I-NHE: Description512K X 8 FLASH 2.7V PROM, 70 ns, PQCC32; Categorystorage; File Size364KB，25 Pages; ManufacturerSST; Websitehttp://www.ssti.com

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SST39VF040-70-4I-NHE Overview

512K X 8 FLASH 2.7V PROM, 70 ns, PQCC32

SST39VF040-70-4I-NHE Parametric

Parameter Name	Attribute value
Number of functions	1
Number of terminals	32
Maximum operating temperature	85 Cel
Minimum operating temperature	-40 Cel
Maximum supply/operating voltage	3.6 V
Minimum supply/operating voltage	2.7 V
Rated supply voltage	3 V
maximum access time	70 ns
Processing package description	ROHS COMPLIANT, PLASTIC, MO-016AE, LCC-32
Lead-free	Yes
EU RoHS regulations	Yes
China RoHS regulations	Yes
state	ACTIVE
Craftsmanship	CMOS
packaging shape	RECTANGULAR
Package Size	CHIP CARRIER
surface mount	Yes
Terminal form	J BEND
Terminal spacing	1.27 mm
terminal coating	MATTE TIN
Terminal location	QUAD
Packaging Materials	PLASTIC/EPOXY
Temperature level	INDUSTRIAL
memory width	8
organize	512K X 8
storage density	4.19E6 deg
operating mode	ASYNCHRONOUS
Number of digits	524288 words
Number of digits	512K
Memory IC type	FLASH 2.7V PROM
serial parallel	PARALLEL

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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040

SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040

SST39LF/VF512 / 010 / 020 / 0403.0 & 2.7V 512Kb / 1Mb / 2Mb / 4Mb (x8) MPF memories

Data Sheet

FEATURES:

• Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8

• Single Voltage Read and Write Operations

– 3.0-3.6V for SST39LF512/010/020/040

– 2.7-3.6V for SST39VF512/010/020/040

• Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption

(typical values at 14 MHz)

– Active Current: 5 mA (typical)

– Standby Current: 1 µA (typical)

• Sector-Erase Capability

– Uniform 4 KByte sectors

• Fast Read Access Time:

– 45 ns for SST39LF512/010/020/040

– 55 ns for SST39LF020/040

– 70 and 90 ns for SST39VF512/010/020/040

• Latched Address and Data

• Fast Erase and Byte-Program:

– Sector-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Byte-Program Time: 14 µs (typical)

– Chip Rewrite Time:

1 second (typical) for SST39LF/VF512

2 seconds (typical) for SST39LF/VF010

4 seconds (typical) for SST39LF/VF020

8 seconds (typical) for SST39LF/VF040

• Automatic Write Timing

– Internal V

Generation

• End-of-Write Detection

– Toggle Bit

– Data# Polling

• CMOS I/O Compatibility

• JEDEC Standard

– Flash EEPROM Pinouts and command sets

• Packages Available

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm)

– 48-ball TFBGA (6mm x 8mm)

– 34-ball WFBGA (4mm x 6mm) for 1M and 2M

• All non-Pb (lead-free) devices are RoHS compliant

PRODUCT DESCRIPTION

The SST39LF512/010/020/040 and SST39VF512/010/

020/040 are 64K x8, 128K x8, 256K x8 and 5124K x8

CMOS Multi-Purpose Flash (MPF) manufactured with

SST’s proprietary, high performance CMOS SuperFlash

technology. The split-gate cell design and thick-oxide tun-

neling injector attain better reliability and manufacturability

compared with alternate approaches. The SST39LF512/

010/020/040 devices write (Program or Erase) with a 3.0-

3.6V power supply. The SST39VF512/010/020/040

devices write with a 2.7-3.6V power supply. The devices

conform to JEDEC standard pinouts for x8 memories.

Featuring high performance Byte-Program, the

SST39LF512/010/020/040 and SST39VF512/010/020/

040 devices provide a maximum Byte-Program time of 20

µsec. These devices use Toggle Bit or Data# Polling to indi-

cate the completion of Program operation. To protect

against inadvertent write, they have on-chip hardware and

Software Data Protection schemes. Designed, manufac-

tured, and tested for a wide spectrum of applications, they

are offered with a guaranteed typical endurance of 10,000

cycles. Data retention is rated at greater than 100 years.

The SST39LF512/010/020/040 and SST39VF512/010/

020/040 devices are suited for applications that require

convenient and economical updating of program, configu-

ration, or data memory. For all system applications, they

S71150-09-000

1/06

significantly improves performance and reliability, while low-

ering power consumption. They inherently use less energy

during Erase and Program than alternative flash technolo-

gies. The total energy consumed is a function of the

applied voltage, current, and time of application. Since for

any given voltage range, the SuperFlash technology uses

less current to program and has a shorter erase time, the

total energy consumed during any Erase or Program oper-

ation is less than alternative flash technologies. These

devices also improve flexibility while lowering the cost for

program, data, and configuration storage applications.

The SuperFlash technology provides fixed Erase and Pro-

gram times, independent of the number of Erase/Program

cycles that have occurred. Therefore the system software

or hardware does not have to be modified or de-rated as is

necessary with alternative flash technologies, whose Erase

and Program times increase with accumulated Erase/Pro-

gram cycles.

To meet surface mount requirements, the SST39LF512/

010/020/040 and SST39VF512/010/020/040 devices are

offered in 32-lead PLCC and 32-lead TSOP packages. The

SST39LF/VF010 and SST39LF/VF020 are also offered in

a 48-ball TFBGA package. See Figures 1, 2, 3, and 4 for

pin assignments.

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

MPF is a trademark of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

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