SILICON, SIGNAL DIODE, DO-35
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Microsemi |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Is Samacsys | N |
| Other features | METALLURGICALLY BONDED |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1 V |
| JEDEC-95 code | DO-35 |
| JESD-30 code | O-LALF-W2 |
| JESD-609 code | e0 |
| Maximum non-repetitive peak forward current | 0.5 A |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 150 °C |
| Minimum operating temperature | -65 °C |
| Maximum output current | 0.2 A |
| Package body material | GLASS |
| Package shape | ROUND |
| Package form | LONG FORM |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Certification status | Not Qualified |
| Maximum reverse current | 0.025 µA |
| Maximum reverse recovery time | 0.004 µs |
| surface mount | NO |
| Terminal surface | TIN LEAD |
| Terminal form | WIRE |
| Terminal location | AXIAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Base Number Matches | 1 |
| 1N4149 | 1N4151 | 1N4154 | 1N4446 | 1N4447 | 1N4448 | 1N4449 | |
|---|---|---|---|---|---|---|---|
| Description | SILICON, SIGNAL DIODE, DO-35 | 0.15 A, SILICON, SIGNAL DIODE, DO-35 | 0.2 A, SILICON, SIGNAL DIODE, DO-35 | SILICON, SIGNAL DIODE, DO-35 | 0.2 A, 100 V, SILICON, SIGNAL DIODE, DO-35 | 0.15 A, SILICON, SIGNAL DIODE, DO-204AH | 0.15 A, 100 V, SILICON, SIGNAL DIODE, DO-35 |
| Is it lead-free? | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
| Reach Compliance Code | compliant | unknown | unknown | compliant | compliant | not_compliant | compliant |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Other features | METALLURGICALLY BONDED | METALLURGICALLY BONDED | METALLURGICALLY BONDED | METALLURGICALLY BONDED | METALLURGICALLY BONDED | LOW LEAKAGE CURRENT | METALLURGICALLY BONDED |
| Shell connection | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Diode component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Diode type | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1 V | 1 V | 1 V | 1 V | 1 V | 1 V | 1 V |
| JEDEC-95 code | DO-35 | DO-35 | DO-35 | DO-35 | DO-35 | DO-35 | DO-35 |
| JESD-30 code | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-PALF-W2 | O-LALF-W2 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| Maximum non-repetitive peak forward current | 0.5 A | 0.5 A | 0.5 A | 0.5 A | 0.5 A | 0.5 A | 0.5 A |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 | 2 | 2 | 2 | 2 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| Minimum operating temperature | -65 °C | -65 °C | -65 °C | -65 °C | -65 °C | -65 °C | -65 °C |
| Maximum output current | 0.2 A | 0.2 A | 0.2 A | 0.2 A | 0.2 A | 0.15 A | 0.2 A |
| Package body material | GLASS | GLASS | GLASS | GLASS | GLASS | PLASTIC/EPOXY | GLASS |
| Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
| Package form | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum reverse current | 0.025 µA | 0.05 µA | 0.1 µA | 0.025 µA | 0.025 µA | 0.025 µA | 0.025 µA |
| Maximum reverse recovery time | 0.004 µs | 0.004 µs | 0.002 µs | 0.004 µs | 0.002 µs | 0.004 µs | 0.004 µs |
| surface mount | NO | NO | NO | NO | NO | NO | NO |
| Terminal surface | TIN LEAD | Tin/Lead (Sn/Pb) | TIN LEAD | TIN LEAD | TIN LEAD | Tin/Lead (Sn/Pb) | TIN LEAD |
| Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
| Terminal location | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Maker | Microsemi | Microsemi | Microsemi | Microsemi | Microsemi | - | Microsemi |
| Is Samacsys | N | - | - | N | N | N | N |
| Base Number Matches | 1 | - | - | 1 | 1 | 1 | 1 |