SST29VF040-55-4I-WH datasheet, PDF

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SST29VF040-55-4I-WH: Description512K X 8 FLASH 5V PROM, 55 ns, PQCC32; Categorystorage; File Size266KB，22 Pages; ManufacturerSST; Websitehttp://www.ssti.com

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SST29VF040-55-4I-WH Overview

512K X 8 FLASH 5V PROM, 55 ns, PQCC32

SST29VF040-55-4I-WH Parametric

Parameter Name	Attribute value
Number of functions	1
Number of terminals	32
Minimum operating temperature	0.0 Cel
Maximum operating temperature	70 Cel
Rated supply voltage	5 V
Minimum supply/operating voltage	4.5 V
Maximum supply/operating voltage	5.5 V
Processing package description	ROHS COMPLIANT, PLASTIC, MS-016AE, LCC-32
EU RoHS regulations	Yes
state	Transferred
ype	NOR TYPE
sub_category	Flash Memories
ccess_time_max	55 ns
data_polling	YES
jesd_30_code	R-PQCC-J32
jesd_609_code	e3
storage density	4.19E6 bi
Memory IC type	FLASH
memory width	8
moisture_sensitivity_level	NOT SPECIFIED
umber_of_sectors_size	4K
Number of digits	524288 words
Number of digits	512K
operating mode	ASYNCHRONOUS
organize	512KX8
Packaging Materials	PLASTIC/EPOXY
ckage_code	QCCJ
ckage_equivalence_code	LDCC32,.5X.6
packaging shape	RECTANGULAR
Package Size	CHIP CARRIER
serial parallel	PARALLEL
eak_reflow_temperature__cel_	260
wer_supplies__v_	5
gramming_voltage__v_	5
qualification_status	COMMERCIAL
seated_height_max	3.56 mm
sector_size__words_	128
standby_current_max	1.00E-4 Am
Maximum supply voltage	0.0300 Am
surface mount	YES
Craftsmanship	CMOS
Temperature level	COMMERCIAL
terminal coating	MATTE TIN
Terminal form	J BEND
Terminal spacing	1.27 mm
Terminal location	QUAD
ime_peak_reflow_temperature_max__s_	40
ggle_bi	YES
length	13.97 mm
width	11.43 mm

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4 Mbit (x8) Small-Sector Flash

SST29SF040 / SST29VF040

SST29SF/VF0404Mb (x8) Byte-Program, Small-Sector flash memories

Data Sheet

FEATURES:

• Organized as 512K x8

• Single Voltage Read and Write Operations

– 4.5-5.5V-only for SST29SF040

– 2.7-3.6V for SST29VF040

• Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption (typical values at 5 MHz)

– Active Current: 10 mA (typical)

– Standby Current:

30 µA (typical) for SST29SF040

1 µA (typical) for SST29VF040

• Sector-Erase Capability

– Uniform 128 Byte sectors

• Fast Read Access Time:

– 55 ns for SST29SF040

– 55 ns and 70 ns for SST29VF040

• Latched Address and Data

• Fast Erase and Byte-Program:

– Sector-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Byte-Program Time: 14 µs (typical)

– Chip Rewrite Time: 8 seconds (typical)

• Automatic Write Timing

– Internal V

Generation

• End-of-Write Detection

– Toggle Bit

– Data# Polling

• TTL I/O Compatibility for SST29SF040

• CMOS I/O Compatibility for SST29VF040

• JEDEC Standard

– Flash EEPROM Pinouts and command sets

• Packages Available

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm)

PRODUCT DESCRIPTION

The SST29SF040 and SST29VF040 are 512K x8 CMOS

Small-Sector Flash (SSF) manufactured with SST’s propri-

etary, high performance CMOS SuperFlash technology.

The split-gate cell design and thick-oxide tunneling injector

attain better reliability and manufacturability compared with

alternate approaches. The SST29SF040 devices write

(Program or Erase) with a 4.5-5.5V power supply. The

SST29VF040 devices write (Program or Erase) with a 2.7-

3.6V power supply. These devices conform to JEDEC

standard pinouts for x8 memories.

Featuring high performance Byte-Program, the

SST29SF040 and SST29VF040 devices provide a maxi-

mum Byte-Program time of 20 µsec. To protect against

inadvertent write, they have on-chip hardware and Soft-

ware Data Protection schemes. Designed, manufactured,

and tested for a wide spectrum of applications, these

devices are offered with a guaranteed endurance of at

least 10,000 cycles. Data retention is rated at greater than

100 years.

The SST29SF040 and SST29VF040 devices are suited

for applications that require convenient and economical

updating of program, configuration, or data memory. For

all system applications, they significantly improve perfor-

mance and reliability, while lowering power consumption.

They inherently use less energy during Erase and Pro-

gram than alternative flash technologies. The total energy

consumed is a function of the applied voltage, current, and

time of application. Since for any given voltage range, the

S71160-10-000

2/04

SuperFlash technology uses less current to program and

has a shorter erase time, the total energy consumed dur-

ing any Erase or Program operation is less than alternative

flash technologies. They also improve flexibility while low-

ering the cost for program, data, and configuration storage

applications.

The SuperFlash technology provides fixed Erase and Pro-

gram times, independent of the number of Erase/Program

cycles that have occurred. Therefore the system software

or hardware does not have to be modified or de-rated as is

necessary with alternative flash technologies, whose

Erase and Program times increase with accumulated

Erase/Program cycles.

To meet high density, surface mount requirements, the

SST29SF040 and SST29VF040 devices are offered in 32-

lead PLCC and 32-lead TSOP packages. See Figures 1

and 2 for pin assignments.

Device Operation

Commands are used to initiate the memory operation func-

tions of the device. Commands are written to the device

using standard microprocessor write sequences. A com-

mand is written by asserting WE# low while keeping CE#

low. The address bus is latched on the falling edge of WE#

or CE#, whichever occurs last. The data bus is latched on

the rising edge of WE# or CE#, whichever occurs first.

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

SSF is a trademark of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

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