1N4150
Small Signal Diodes
DO-35
min. 1.083 (27.5)
FEATURES
♦
Silicon Epitaxial Planar Diode
♦
For general purpose and switch-
ing.
max.
∅
.079 (2.0)
max. .150 (3.8)
♦
This diode is also available in other
case styles including: the SOD-123 case
with the type designation 1N4150W and the
MiniMELF case with the type designation
LL4150.
Cathode
Mark
min. 1.083 (27.5)
max.
∅
.020 (0.52)
MECHANICAL DATA
Case:
DO-35 Glass Case
Weight:
approx. 0.13 g
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Peak Reverse Voltage
Maximum Average Rectified Current
Maximum Power Dissipation at T
amb
= 25 °C
Maximum Junction Temperature
Maximum Forward Voltage Drop at I
F
= 200 mA
Maximum Reverse Current at V
R
= 50 V
Max. Reverse Recovery Time
at I
F
= I
R
= 10 to 200 mA, to 0.1 I
F
V
RM
I
0
P
tot
T
j
V
F
I
R
t
rr
Value
50
200
500
200
1.0
100
4.0
Unit
V
mA
mW
°C
V
nA
ns
4/98
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