SST29VE010-200-4C-WHE datasheet, PDF

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SST29VE010-200-4C-WHE: Description128K X 8 FLASH 5V PROM, 70 ns, PQCC32; Categorystorage; File Size406KB，30 Pages; ManufacturerSST; Websitehttp://www.ssti.com

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SST29VE010-200-4C-WHE Overview

128K X 8 FLASH 5V PROM, 70 ns, PQCC32

SST29VE010-200-4C-WHE Parametric

Parameter Name	Attribute value
Number of functions	1
Number of terminals	32
Maximum operating temperature	85 Cel
Minimum operating temperature	-40 Cel
Maximum supply/operating voltage	5.5 V
Minimum supply/operating voltage	4.5 V
Rated supply voltage	5 V
maximum access time	70 ns
Processing package description	ROHS COMPLIANT, plastic, MS-016AE, LCC-32
Lead-free	Yes
EU RoHS regulations	Yes
state	TRANSFERRED
Craftsmanship	CMOS
packaging shape	Rectangle
Package Size	ChipCARRIER
surface mount	Yes
Terminal form	J BEND
Terminal spacing	1.27 mm
terminal coating	MATTE Tin
Terminal location	Four
Packaging Materials	Plastic/Epoxy
Temperature level	INDUSTRIAL
memory width	8
organize	128K × 8
storage density	1.05E6 deg
operating mode	ASYNCHRONOUS
Number of digits	131072 words
Number of digits	128K
Memory IC type	FLASH 5V programmable read-only memory
serial parallel	parallel
Maximum TWC of write cycle	10 ms

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1 Mbit (128K x8) Page-Write EEPROM

SST29EE010 / SST29VE010

SST29EE / VE0101Mb (x8) Page-Write, Small-Sector flash memories

Data Sheet

FEATURES:

• Single Voltage Read and Write Operations

– 4.5-5.5V for SST29EE010

– 2.7-3.6V for SST29VE010

• Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption

– Active Current: 20 mA (typical) for 5V and

10 mA (typical) for 2.7V

– Standby Current: 10 µA (typical)

• Fast Page-Write Operation

– 128 Bytes per Page, 1024 Pages

– Page-Write Cycle: 5 ms (typical)

– Complete Memory Rewrite: 5 sec (typical)

– Effective Byte-Write Cycle Time: 39 µs (typical)

• Fast Read Access Time

– 4.5-5.5V operation: 70 and 90 ns

– 2.7-3.6V operation: 150 and 200 ns

• Latched Address and Data

• Automatic Write Timing

– Internal V

Generation

• End of Write Detection

– Toggle Bit

– Data# Polling

• Hardware and Software Data Protection

• Product Identification can be accessed via

Software Operation

• TTL I/O Compatibility

• JEDEC Standard

– Flash EEPROM Pinouts and command sets

• Packages Available

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm, 8mm x 20mm)

– 32-pin PDIP

• All non-Pb (lead-free) devices are RoHS compliant

PRODUCT DESCRIPTION

The SST29EE/VE010 are 128K x8 CMOS Page-Write

EEPROMs manufactured with SST’s proprietary, high-per-

formance CMOS SuperFlash technology. The split-gate

cell design and thick-oxide tunneling injector attain better

reliability and manufacturability compared with alternate

approaches. The SST29EE/VE010 write with a single

power supply. Internal Erase/Program is transparent to the

user. The SST29EE/VE010 conform to JEDEC standard

pinouts for byte-wide memories.

Featuring high performance Page-Write, the SST29EE/

VE010 provide a typical Byte-Write time of 39 µsec. The

entire memory, i.e., 128 Kbyte, can be written page-by-

page in as little as 5 seconds, when using interface features

such as Toggle Bit or Data# Polling to indicate the comple-

tion of a Write cycle. To protect against inadvertent write,

the SST29EE/VE010 have on-chip hardware and Software

Data Protection schemes. Designed, manufactured, and

tested for a wide spectrum of applications, the SST29EE/

VE010 are offered with a guaranteed Page-Write endur-

ance of 10,000 cycles. Data retention is rated at greater

than 100 years.

The SST29EE/VE010 are suited for applications that

require convenient and economical updating of pro-

gram, configuration, or data memory. For all system

applications, the SST29EE/VE010 significantly

improve performance and reliability, while lowering

power consumption. The SST29EE/VE010 improve

flexibility while lowering the cost for program, data, and

configuration storage applications.

To meet high density, surface mount requirements, the

SST29EE/VE010 are offered in 32-lead PLCC and 32-lead

TSOP packages. A 600-mil, 32-pin PDIP package is also

available. See Figures 1, 2, and 3 for pin assignments.

Device Operation

The SST Page-Write EEPROM offers in-circuit electrical

write capability. The SST29EE/VE010 does not require

separate Erase and Program operations. The internally

timed Write cycle executes both erase and program trans-

parently to the user. The SST29EE/VE010 have industry

standard optional Software Data Protection, which SST

recommends always to be enabled. The SST29EE/VE010

are compatible with industry standard EEPROM pinouts

and functionality.

S71061-11-000

9/05

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

SSF is a trademark of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

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