1N4150-1 datasheet, PDF - EEWORLD Datasheet

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1N4150-1: Description0.2 A, SILICON, SIGNAL DIODE, DO-35; Categorysemiconductor Discrete semiconductor; File Size32KB，2 Pages; ManufacturerCDI-DIODE; Websitehttp://www.cdi-diodes.com

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1N4150-1 Overview

0.2 A, SILICON, SIGNAL DIODE, DO-35

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• 1N4150-1 AVAILABLE IN

JAN, JANTX,

AND

JANTXV

PER MIL-PRF-19500/231

• 1N3600 AVAILABLE IN

JAN, JANTX,

AND

JANTXV

PER MIL-PRF-19500/231

• SWITCHING DIODES

• HERMETICALLY SEALED

• METALLURGICALLY BONDED

• DOUBLE PLUG CONSTRUCTION

1N4150

and

1N4150-1

and

1N3600

MAXIMUM RATINGS

Junction Temperature: -65°C to +175°C

Storage Temperature: -65°C to +175°C

Operating Current: 300 mA @ TA = +25°C

Derating: 2.0 mA dc/°C Above TL = + 75°C @ L = 3/8”

Forward Surge Current: 4A, (tp = 1µs); 0.5A (tp = 1s)

ELECTRICAL CHARACTERISTICS

@ 25°C, unless otherwise speciﬁed.

Type

V BR

V RWM

I R1

VR = 50 V dc

IR = 10 µA

V dc

1N3600

1N4150,-1

75

V (pk)

50

TA = 25°C

µA dc

0.1

1 R2

VR = 50 V dc

TA = 150°C

µA dc

100

C

VR = 0; f = 1 Mhz;

ac signals = 50 mV (p-p)

pF

2.5

trr

IF = IR = 10 to 100 mAdc

RL = 100 ohms

ns

4

FIGURE 1

FORWARD VOLTAGE LIMITS – ALL TYPES

V F1

Limits

I F = 1 mA dc

V F2

I F = 10 mA dc

V F3

I F = 50 mA dc

(Pulsed)

V dc

0.760

0.860

V F4

I F = 100 mA dc

(Pulsed)

V dc

0.820

0.920

V F5

I F = 200 mA dc

(Pulsed)

V dc

0.870

1.000

DESIGN DATA

CASE:

Hermetically sealed

glass case per MIL-S-19500/231

D0-35 outline.

LEAD MATERIAL:

Copper clad steel.

LEAD FINISH:

Tin / Lead

THERMAL RESISTANCE:

(ROJL):

250 ˚C/W maximum at L = .375

THERMAL IMPEDANCE: (Z

OJX): 70

˚C/W maximum

POLARITY:

Cathode end is banded.

MOUNTING POSITION:

Any.

V dc

minimum

maximum

0.540

0.620

V dc

0.660

0.740

22 COREY STREET, MELROSE, MASSACHUSETTS 02176

PHONE (781) 665-1071

FAX (781) 665-7379

WEBSITE: http://www.cdi-diodes.com

E-mail: mail@cdi-diodes.com

1N4150-1 Related Products

	1N4150-1	1N3600	1N4150
Description	0.2 A, SILICON, SIGNAL DIODE, DO-35	0.2 A, SILICON, SIGNAL DIODE, DO-35	0.2 A, SILICON, SIGNAL DIODE

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