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1N4157

Description
SILICON, STABISTOR DIODE, DO-35
Categorysemiconductor    Discrete semiconductor   
File Size263KB,6 Pages
ManufacturerETC
Download Datasheet Parametric View All

1N4157 Overview

SILICON, STABISTOR DIODE, DO-35

1N4157 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionDO-35, 2 PIN
stateACTIVE
packaging shaperound
Package SizeLONG FORM
Terminal formWire
terminal coatingtin lead
Terminal locationAXIAL
Packaging MaterialsUNSPECIFIED
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typeVoltage limiting diode
Maximum forward voltage2.7 V
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