Preliminary data
BSO303SP
OptiMOS
-P Small-Signal-Transistor
Feature
•
P-Channel
•
Enhancement mode
•
Logic Level
•
150°C operating temperature
•
Avalanche rated
•
dv/dt rated
S
S
S
G
1
2
3
4
Top View
Product Summary
V
DS
R
DS(on)
I
D
-30
21
-8.9
V
mΩ
A
8
7
6
5
D
D
D
D
SIS00062
Type
BSO303SP
Package
SO 8
Ordering Code
Q67042-S4129
Maximum Ratings,at
T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
T
A
=25°C
T
A
=70°C
Symbol
I
D
Value
-8.9
-7.1
Unit
A
Pulsed drain current
T
A
=25°C
I
D puls
E
AS
dv/dt
V
GS
P
tot
T
j ,
T
stg
-35.6
97
-6
±20
2.35
-55... +150
55/150/56
mJ
kV/µs
V
W
°C
Avalanche energy, single pulse
I
D
=-8.9 A ,
V
DD
=-25V,
R
GS
=25Ω
Reverse diode dv/dt
I
S
=-8.9A,
V
DS
=-24V, di/dt=200A/µs,
T
jmax
=150°C
Gate source voltage
Power dissipation
T
A
=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Page 1
2002-01-08
Preliminary data
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
SMD version, device on PCB:
@ min footprint, t < 10s
@ 6 cm
2
cooling area
1)
BSO303SP
Symbol
min.
R
thJS
R
thJA
-
-
-
Values
typ.
-
-
-
max.
35
110
53
Unit
K/W
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Static Characteristics
Drain-source breakdown voltage
V
GS
=0,
I
D
=-250µA
Symbol
min.
V
(BR)DSS
V
GS(th)
I
DSS
-
-
I
GSS
R
DS(on)
R
DS(on)
-
-
-
-30
-1
Values
typ.
-
-1.5
max.
-
-2
Unit
V
Gate threshold voltage,
V
GS
=
V
DS
I
D
=-100µA
Zero gate voltage drain current
V
DS
=-30V,
V
GS
=0,
T
j
=25°C
V
DS
=-30V,
V
GS
=0,
T
j
=150°C
µA
-0.1
-10
-10
24
15
-1
-100
-100
31
21
nA
mΩ
Gate-source leakage current
V
GS
=-20V,
V
DS
=0
Drain-source on-state resistance
V
GS
=-4.5V,
I
D
=-7.3A
Drain-source on-state resistance
V
GS
=-10V,
I
D
=-8.9A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air; t
≤10
sec.
Page 2
2002-01-08
Preliminary data
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=-15V,
V
GS
=-10V,
I
D
=-1A,
R
G
=6Ω
çV
DS
ç≥2*çI
D
ç*R
DS(on)max
I
D
=-7.1A
V
GS
=0,
V
DS
=-25V,
f=1MHz
BSO303SP
Symbol
Conditions
min.
12
-
-
-
-
-
-
-
Values
typ.
24
1754
465
389
10.3
12.5
53
40.3
max.
-
-
-
-
15.5
19
80
60.5
Unit
S
pF
ns
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
V
SD
t
rr
Q
rr
V
GS
=0, |I
F
| = |I
D
|
V
R
=-15V, |I
F
|
=
|l
D
|,
di
F
/dt=100A/µs
Q
gs
Q
gd
Q
g
V
DD
=-24V,
I
D
=-8.9A
-
-
-
-
-4.1
-15.8
-46
-2.4
-6.2
-26
-69
-
nC
V
DD
=-24V,
I
D
=-8.9A,
V
GS
=0 to -10V
V
(plateau)
V
DD
=-24V,
I
D
=-8.9A
V
I
S
I
SM
T
A
=25°C
-
-
-
-
-
-
-
-0.87
25
11.7
-3.5
-35.6
A
-1.09 V
37
17.6
ns
nC
Page 3
2002-01-08
Preliminary data
1 Power dissipation
P
tot
=
f
(T
A
)
2.6
BSO303SP
BSO303SP
2 Drain current
I
D
=
f
(T
A
)
parameter: |V
GS
|≥ 10 V
-10
BSO303SP
W
2.2
2
1.8
A
-8
-7
P
tot
1.6
1.4
I
D
20
40
60
80
100
120
-6
-5
1.2
1
0.8
0.6
0.4
0.2
0
0
-1
0
0
-4
-3
-2
°C
160
20
40
60
80
100
120
°C
160
T
A
T
A
3 Safe operating area
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
A
= 25 °C
-10
2
BSO303SP
4 Transient thermal impedance
Z
thJS
=
f
(t
p
)
parameter :
D
=
t
p
/T
10
2
BSO303SP
/
I
D
=
R
(
DS
on
)
A
V
D
S
K/W
t
p = 76.0µs
100 µs
10
1
1 ms
-10
1
Z
thJS
10
0
I
D
10 ms
-10
0
10
-1
D = 0.50
0.20
10
-2
0.10
0.05
DC
10
0.02
-3
-10
-1
0.01
single pulse
-10
-2 -1
-10
-10
0
-10
1
V
-10
2
10
-4 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
V
DS
Page 4
t
p
2002-01-08
Preliminary data
5 Typ. output characteristic
I
D
=
f
(V
DS
);
T
j
=25°C
parameter:
t
p
= 80 µs
30
BSO303SP
6 Typ. drain-source on resistance
R
DS(on)
=
f
(I
D
)
parameter:
V
GS
Vgs = - 3V
Ω
Vgs = - 3.5V
Vgs = - 4V
Vgs = - 4.5V
0.08
Vgs= - 5V
Vgs = - 5.5V
0.07
Vgs = - 6V
Vgs = - 8V
0.06
Vgs = - 10V
0.05
0.04
0.1
A
Vgs= - 4V
Vgs= - 4.5V
Vgs= - 5V
Vgs= - 6V
Vgs= - 10V
Vgs= - 3.5V
-
I
D
20
15
Vgs= -3V
10
R
DS(on)
Vgs= -2.5V
0.03
0.02
5
0.01
0
0
0
0
1
2
3
4
5
6
V
7.5
-
V
DS
2
4
6
8
10
12
14
16
A
20
-
I
D
7 Typ. transfer characteristics
I
D
=
f
(
V
GS
); |V
DS
|≥ 2 x |I
D
| x
R
DS(on)max
parameter:
t
p
= 80 µs
40
8 Typ. forward transconductance
g
fs
= f(I
D
);
T
j
=25°C
parameter:
t
p = 80 µs
40
A
S
30
30
-
I
D
25
g
fs
0.5
1
1.5
2
2.5
3
4
V
-
V
GS
25
20
20
15
15
10
10
5
5
0
0
0
0
5
10
15
20
25
30
40
A
-
I
D
Page 5
2002-01-08
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