AOT7N70/AOTF7N70
700V, 7A N-Channel MOSFET
General Description
The AOT7N70 & AOTF7N70 have been fabricated using
an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low R
DS(on)
, C
iss
and C
rss
along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
For Halogen Free add "L" suffix to part number:
AOT7N70L & AOTF7N70L
Top View
TO-220
TO-220F
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
800V@150℃
7A
< 1.8Ω
100% UIS Tested
100% R
g
Tested
D
G
D
S
G
D
S
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
AOT7N70
V
DS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
G
C
AOTF7N70
700
±30
7*
4.2*
24
5
187
375
50
5
Units
V
V
A
A
mJ
mJ
V/ns
V
GS
T
C
=25°C
T
C
=100°C
I
D
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
, T
STG
T
L
Symbol
R
θJA
R
θCS
AOT7N70
65
0.5
0.63
198
1.6
7
4.2
Repetitive avalanche energy
Single plused avalanche energy
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
T
C
=25°C
B
Power Dissipation
Derate above 25
o
C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A,D
38.5
0.3
-55 to 150
300
AOTF7N70
65
--
3.25
W
W/
o
C
°C
°C
Units
°C/W
°C/W
°C/W
Maximum Case-to-sink
A
Maximum Junction-to-Case
R
θJC
* Drain current limited by maximum junction temperature.
Rev.2.0: June 2013
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Page 1 of 6
AOT7N70/AOTF7N70
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
STATIC PARAMETERS
BV
DSS
BV
DSS
/∆TJ
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
FS
V
SD
I
S
I
SM
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Pulsed Current
782
V
GS
=0V, V
DS
=25V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
64
5.5
2
16
V
GS
=10V, V
DS
=560V, I
D
=7A
4
6.3
V
GS
=10V, V
DS
=350V, I
D
=7A,
R
G
=25Ω
I
F
=7A,dI/dt=100A/µs,V
DS
=100V
215
4.7
978
80
7
4
20.5
5
7.9
23
50
53
38
270
5.9
325
7.1
I
D
=250µA, V
GS
=0V, T
J
=25°C
I
D
=250µA, V
GS
=0V, T
J
=150°C
I
D
=250µA, V
GS
=0V
V
DS
=700V, V
GS
=0V
V
DS
=560V, T
J
=125°C
V
DS
=0V, V
GS
=±30V
V
DS
=5V I
D
=250µA
V
GS
=10V, I
D
=3.5A
V
DS
=40V, I
D
=3.5A
I
S
=1A,V
GS
=0V
3
4
1.48
6.7
0.76
1
7
24
1175
104
10
6
25
6
11.8
700
800
0.8
1
10
±100
4.5
1.8
V
V/
o
C
µA
nΑ
V
Ω
S
V
A
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
µC
Parameter
Conditions
Min
Typ
Max
Units
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=7A,dI/dt=100A/µs,V
DS
=100V
A. The value of R
θJA
is measured with the device in a still air environment with T
A
=25°C.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C, Ratings are based on low frequency and duty cycles to keep initial
T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µs
pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
G. L=30mH, I
AS
=5A, V
DD
=150V, R
G
=25Ω, Starting T
J
=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: June 2013
www.aosmd.com
Page 2 of 6
AOT7N70/AOTF7N70
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
12
10V
9
6.5V
I
D
(A)
I
D
(A)
6
6V
3
V
GS
=5.5V
0
0
5
10
15
20
25
30
V
DS
(Volts)
Fig 1: On-Region Characteristics
3.0
Normalized On-Resistance
3
2.5
2
1.5
1
0.5
0
-100
V
GS
=10V
I
D
=3.5A
0.1
2
4
6
8
10
V
GS
(Volts)
Figure 2: Transfer Characteristics
10
125°C
100
V
DS
=40V
-55°C
1
25°C
2.5
R
DS(ON)
(Ω)
2.0
1.5
V
GS
=10V
1.0
0
2
4
6
8
10
12
14
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.2
1.0E+02
1.0E+01
BV
DSS
(Normalized)
1.1
1.0E+00
1
I
S
(A)
1.0E-01
1.0E-02
0.9
1.0E-03
0.8
-100
1.0E-04
40
125°C
25°C
-50
0
50
100
150
200
0.0
0.2
0.4
0.6
0.8
1.0
1.2
T
J
(°C)
Figure 5: Break Down vs. Junction Temperature
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev.2.0: June 2013
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Page 3 of 6
AOT7N70/AOTF7N70
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
V
DS
=560V
I
D
=7A
Capacitance (pF)
10000
C
iss
1000
C
oss
100
12
V
GS
(Volts)
9
6
10
3
C
rss
1
0
5
10
15
20
25
30
0.1
1
10
100
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
100
100
10µs
R
DS(ON)
limited
1
DC
0.1
T
J(Max)
=150°C
T
C
=25°C
0.01
1
10
100
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area for AOT7N70 (Note F)
1000
10000
1
10
100
V
DS
(Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF7N70 (Note F)
1000
10000
100µs
1ms
10ms
0.1s
1s
V
DS
(Volts)
Figure 8: Capacitance Characteristics
0
10
I
D
(Amps)
R
DS(ON)
limited
10µs
100µs
I
D
(Amps)
150
10
1
DC
0.1
T
J(Max)
=150°C
T
C
=25°C
1ms
10ms
0.01
8
Current rating I
D
(A)
6
4
2
0
0
25
50
75
100
125
T
CASE
(°C)
Figure 11: Current De-rating (Note B)
Rev.2.0: June 2013
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Page 4 of 6
AOT7N70/AOTF7N70
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
Z
θJC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=0.63°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
T
Single Pulse
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOT7N70 (Note F)
10
Z
θJC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=3.25°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
on
T
10
100
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF7N70 (Note F)
Rev.2.0: June 2013
www.aosmd.com
Page 5 of 6
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