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DBLS209GC1G

Description
Bridge Rectifier Diode, 1 Phase, 2A, 1400V V(RRM), Silicon, GREEN, PLASTIC, DBLS, 4 PIN
Categorydiode   
File Size212KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

DBLS209GC1G Overview

Bridge Rectifier Diode, 1 Phase, 2A, 1400V V(RRM), Silicon, GREEN, PLASTIC, DBLS, 4 PIN

DBLS209GC1G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionR-PDSO-G4
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Other featuresUL RECOGNIZED
Minimum breakdown voltage1400 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-PDSO-G4
Maximum non-repetitive peak forward current50 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum repetitive peak reverse voltage1400 V
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1
DBLS201G thru DBLS209G
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Ideal for automated placement
- Reliable low cost construction utilizing molded plastic technique
- High surge current capability
- UL Recognized File # E-326854
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Glass Passivated Bridge Rectifiers
DBLS
MECHANICAL DATA
Case:
Molded plastic body
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity:
Polarity as marked on the body
Weight:
0.36 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Rating for fusing (t<8.3ms)
Maximum instantaneous forward voltage (Note 1)
I
F
= 2 A
Maximum DC reverse current
at rated DC blocking voltage
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with PW=300μs,1% Duty Cycle
T
J
=25
T
J
=125℃
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
I
R
R
θjL
R
θjA
T
J
T
STG
1.15
2
500
15
40
- 55 to +150
- 55 to +150
O
DBLS DBLS DBLS DBLS DBLS DBLS DBLS DBLS DBLS
201G 202G 203G 204G 205G 206G 207G 208G 209G
50
35
50
100
70
100
200
140
200
400
280
400
600
420
600
2
50
10.3
1.30
800
560
800
1000
700
1000
1200
840
1200
1400
980
1400
UNIT
V
V
V
A
A
A
2
s
V
μA
C/W
O
O
C
C
Document Number: DS_D1310039
Version: H13

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