EEWORLDEEWORLDEEWORLD

Part Number

Search

SS3003CH

Description
3 A, 30 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size36KB,3 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

SS3003CH Overview

3 A, 30 V, SILICON, RECTIFIER DIODE

SS3003CH Parametric

Parameter NameAttribute value
MakerSANYO
package instructionR-PDSO-G6
Contacts6
Reach Compliance Codeunknow
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.385 V
JESD-30 codeR-PDSO-G6
Maximum non-repetitive peak forward current20 A
Number of components1
Phase1
Number of terminals6
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
Maximum reverse recovery time0.02 µs
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationDUAL
Ordering number : EN8992
SS3003CH
SANYO Semiconductors
DATA SHEET
SS3003CH
Applications
Low VF Schottky Barrier Diode
30V, 3.0A Rectifier
High frequency rectification (switching regulators, converters, choppers).
Features
Small switching noise.
Low forward voltage (IF=3A, VF max=0.42V).
Ultrasmall package permitting applied sets to be small and slim.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
50Hz sine wave, 1 cycle
Conditions
Ratings
30
30
3.0
20
--55 to +125
--55 to +125
Unit
V
V
A
A
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Symbol
VR
VF
IR
C
trr
Rth(j-a)
IR=2.0mA
IF=2.0A
IF=3.0A
VR=15V
VR=10V, f=1MHz
IF=IR=100mA
Mouted on a ceramic board (900mm
2
!0.8mm)
Conditions
Ratings
min
30
0.335
0.37
90
20
50
0.385
0.42
1.4
typ
max
Unit
V
V
V
mA
pF
ns
°C
/ W
Marking : SG
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72606 / 32406SB MS IM TB-00002130 No.8992-1/3

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2228  679  2652  2124  1983  45  14  54  43  40 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号