1N4447 datasheet, PDF - EEWORLD Datasheet

1N4447: Description0.2 A, 100 V, SILICON, SIGNAL DIODE, DO-35; Categorysemiconductor Discrete semiconductor; File Size263KB，6 Pages; ManufacturerETC

Download Datasheet Parametric View All

1N4447 Online Shopping

Suppliers	Part Number	Price	MOQ	In stock
	1N4447	-	-	View	Buy Now

0.2 A, 100 V, SILICON, SIGNAL DIODE, DO-35

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	DO-35, 2 PIN
Lead-free	Yes
state	ACTIVE
packaging shape	round
Package Size	LONG FORM
Terminal form	Wire
terminal coating	MATTE Tin
Terminal location	AXIAL
Packaging Materials	UNSPECIFIED
structure	single
Shell connection	isolation
Diode component materials	silicon
Maximum power consumption limit	0.5000 W
Diode type	Signal diode
Maximum reverse recovery time	0.0040 us
Maximum repetitive peak reverse voltage	100 V
Maximum average forward current	0.2000 A

Shortcut: E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ

Popular Components