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1N4448

Description
0.15 A, SILICON, SIGNAL DIODE, DO-204AH
Categorysemiconductor    Discrete semiconductor   
File Size74KB,3 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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1N4448 Overview

0.15 A, SILICON, SIGNAL DIODE, DO-204AH

1N4448 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionGlass, DO-35, 2 PIN
stateTRANSFERRED
packaging shaperound
Package SizeLONG FORM
Terminal formWire
Terminal locationAXIAL
Packaging MaterialsGlass
structuresingle
Shell connectionisolation
Diode component materialssilicon
Maximum power consumption limit0.5000 W
Diode typeSignal diode
Maximum reverse recovery time0.0040 us
Maximum average forward current0.1500 A
MCC
Features
  omponents
21201 Itasca Street Chatsworth

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1N4448
Low Current Leakage
Metalurgically Bonded Construction
Low Cost
500mW 100Volt
Switching Diode
DO-35
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Maximum Thermal Resistance; 35
°C/W
Junction To Ambient
Electrical Characteristics @ 25°C Unless Otherwise Specified
Reverse Voltage
Peak Reverse
Voltage
Average Rectified
Current
Power Dissipation
Junction
Temperature
Peak Forward Surge
Current
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Junction
Capacitance
Reverse Recovery
Time
V
R
V
RM
I
O
P
TOT
T
J
I
FSM
V
F
75V
100V
150mA
500mW
150
°C
Resistive Load
f >= 50Hz
D
A
Cathode
Mark
B
D
500mA
t<1s
C
1.0V(MAX)
I
FM
= 100mA;
0.62-0.72V
I
FM
= 5.0mA
V
R
=20Volts
25nA
I
R
T
J
= 25°C
50µA
T
J
= 150°C
5uA
V
R
=75Volts
C
J
4pF
Measured at
1.0MHz, V
R
=4.0V
T
rr
4nS
I
F
=10mA
V
R
= 6V
R
L
=100Ω
*Pulse test: Pulse width 300
µsec,
Duty cycle 2%
DIMENSIONS
INCHES
MIN
---
---
---
1.000
MM
MIN
---
---
---
25.40
DIM
A
B
C
D
MAX
.166
.079
.020
---
MAX
4.2
2.00
.52
---
NOTE
www.mccsemi.com

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