SIT8009BI-11-18E-120.000000E datasheet, PDF

SiT8009B

High Frequency, Low Power Oscillator

ow Power, Standard Frequency Oscillator

Features



Applications



100% pin-to-pin drop-in replacement to quartz-based XO

Excellent total frequency stability as low as ±20 ppm

Operating temperature from -40°C to 85°C. For 125°C and/

or -55°C options, refer to

SiT8919

and

SiT8921

Low power consumption of 4.9 mA typical at 1.8V

Standby mode for longer battery life

Fast startup time of 5 ms

LVCMOS/HCMOS compatible output

Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5,

5.0 x 3.2, 7.0 x 5.0 mm x mm

Instant samples with

Time Machine II

and

Field Programmable

Oscillators

RoHS and REACH compliant, Pb-free, Halogen-free and

Antimony-free

For AEC-Q100 oscillators, refer to

SiT8924

and

SiT8925



Ideal for GPON/EPON, network switches, routers,

servers, embedded systems

Ideal for Ethernet, PCI-E, DDR, etc.

Electrical Characteristics

All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise

stated. Typical values are at 25°C and nominal supply voltage.

Table 1. Electrical Characteristics

Parameters

Output Frequency Range

Frequency Stability

Symbol

f

F_stab

Min.

115

-20

-25

-50

Operating Temperature Range

T_use

-20

-40

Supply Voltage

Vdd

1.62

2.25

2.52

2.7

2.97

2.25

Current Consumption

Idd

–

OE Disable Current

Standby Current

I_OD

I_std

–

Duty Cycle

Rise/Fall Time

DC

Tr, Tf

45

–

Output High Voltage

Output Low Voltage

VOH

VOL

90%

–

Typ.

–

1.8

2.5

2.8

3.0

3.3

–

6.2

5.5

4.9

–

2.6

1.4

0.6

–

1

1.3

0.8

–

Max.

137

+20

+25

+50

+70

+85

1.98

2.75

3.08

3.3

3.63

7.5

6.4

5.6

4.2

4.0

4.3

2.5

1.3

55

2

2.5

2

–

10%

Unit

MHz

ppm

°C

V

mA

A

%

ns

Vdd

No load condition, f = 125 MHz, Vdd = 2.8V, 3.0V, 3.3V or

2.25 to 3.63V

No load condition, f = 125 MHz, Vdd = 2.5V

No load condition, f = 125 MHz, Vdd = 1.8V

Vdd = 2.5V to 3.3V, OE = GND, Output in high-Z state

Vdd = 1.8V, OE = GND, Output in high-Z state

ST = GND, Vdd = 2.8V to 3.3V, Output is weakly pulled down

̅ ̅̅

ST = GND, Vdd = 2.5V, Output is weakly pulled down

̅ ̅̅

ST = GND, Vdd = 1.8V, Output is weakly pulled down

̅ ̅̅

All Vdds

Vdd = 2.5V, 2.8V, 3.0V or 3.3V, 20% - 80%

Vdd =1.8V, 20% - 80%

Vdd = 2.25V - 3.63V, 20% - 80%

IOH = -4 mA (Vdd = 3.0V or 3.3V)

IOL = 4 mA (Vdd = 3.0V or 3.3V)

Inclusive of Initial tolerance at 25°C, 1

st

year aging at 25°C,

and variations over operating temperature, rated power

supply voltage and load.

Condition

Frequency Range

Frequency Stability and Aging

Operating Temperature Range

Extended Commercial

Industrial

Contact

SiTime

for 1.5V support

Supply Voltage and Current Consumption

LVCMOS Output Characteristics

Rev 1.04

January 30, 2018

www.sitime.com

SiT8009B

High Frequency, Low Power Oscillator

Table 1. Electrical Characteristics (continued)

Parameters

Input High Voltage

Input Low Voltage

Input Pull-up Impedance

Symbol

Min.

Typ.

–

87

Max.

–

30%

150

Unit

Pin 1, OE or ST

̅ ̅̅

Pin 1, OE or ST

̅ ̅̅

Pin 1, OE logic high or logic low, or ST logic high

Condition

Input Characteristics

VIH

VIL

Z_in

70%

–

50

2

Startup Time

Enable/Disable Time

Resume Time

RMS Period Jitter

T_start

T_oe

T_resume

T_jitt

–

Peak-to-peak Period Jitter

T_pk

–

RMS Phase Jitter (random)

T_phj

–

Vdd

k

–

Pin 1, ST logic low

̅ ̅̅

M

Startup and Resume Timing

–

5

122

5

Jitter

1.9

1.8

12

14

0.5

1.3

3

4

25

30

0.9

2

ps

f = 125 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V

f = 125 MHz, Vdd = 1.8V

f = 125 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V

f = 125 MHz, Vdd = 1.8V

Integration bandwidth = 900 kHz to 7.5 MHz

Integration bandwidth = 12 kHz to 20 MHz

ms

ns

ms

Measured from the time Vdd reaches its rated minimum value

f = 137 MHz. For other frequencies, T_oe = 100 ns + 3 * cycles

Measured from the time ST pin crosses 50% threshold

̅ ̅̅

Table 2. Pin Description

Symbol

[1]

Functionality

Output Enable

H : specified frequency output

L: output is high impedance. Only output driver is disabled.

H

[1]

: specified frequency output

L: output is low (weak pull down). Device goes to sleep mode. Supply

current reduces to I_std.

Any voltage between 0 and Vdd or Open

[1]

: Specified frequency

output. Pin 1 has no function.

Electrical ground

Oscillator output

Power supply voltage

[2]

OE/ST/NC

Top View

1

OE/ST /NC

̅ ̅̅

Standby

No Connect

2

3

4

GND

OUT

VDD

Power

Output

Power

Figure 1. Pin Assignments

Notes:

1. In OE or ST mode, a pull-up resistor of 10 kΩ or less is recommended if pin 1 is not externally driven. If pin 1 needs to be left floating, use the NC option.

̅ ̅̅

2. A capacitor of value 0.1 µF or higher between Vdd and GND is required.

Rev 1.04

Page 2 of 17

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SiT8009B

High Frequency, Low Power Oscillator

Table 3. Absolute Maximum Limits

Attempted operation outside the absolute maximum ratings may cause permanent damage to the part.

Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.

Parameter

Storage Temperature

Vdd

Electrostatic Discharge

Soldering Temperature (follow standard Pb free

soldering guidelines)

Junction Temperature

[3]

Min.

-65

-0.5

–

Max.

150

4

2000

260

150

Unit

°C

V

°C

Note:

3. Exceeding this temperature for extended period of time may damage the device.

Table 4. Thermal Consideration

[4]

Package

7050

5032

3225

2520

2016

Note:

4. Refer to JESD51 for

JA

and

JC

definitions, and reference layout used to determine the

JA

and

JC

values in the above table.



JA, 4 Layer Board

(°C/W)

142

97

109

117

152



JA, 2 Layer Board

(°C/W)

273

199

212

222

252



JC, Bottom

(°C/W)

30

24

27

26

36

Table 5. Maximum Operating Junction Temperature

[5]

Max Operating Temperature (ambient)

70°C

85°C

Maximum Operating Junction Temperature

80°C

95°C

Note:

5. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature.

Table 6. Environmental Compliance

Parameter

Mechanical Shock

Mechanical Vibration

Temperature Cycle

Solderability

Moisture Sensitivity Level

Condition/Test Method

MIL-STD-883F, Method 2002

MIL-STD-883F, Method 2007

JESD22, Method A104

MIL-STD-883F, Method 2003

MSL1 @ 260°C

Rev 1.04

Page 3 of 17

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SiT8009B

High Frequency, Low Power Oscillator

Test Circuit and Waveform

[6]

Vdd

Vout

Test Point

tr

4

Power

Supply

0.1 uF

1

2

3

15pF

(including probe

and fixture

capacitance)

tf

80% Vdd

50%

20% Vdd

High Pulse

(TH)

Period

Low Pulse

(TL)

Vdd

OE/ST Function

1 kΩ

Figure 2. Test Circuit

Note:

6. Duty Cycle is computed as Duty Cycle = TH/Period.

Figure 3. Waveform

Timing Diagrams

90% Vdd

Vdd

50% Vdd

[7]

Pin 4 Voltage

T_start

No Glitch

during start up

ST Voltage

T_resume

CLK Output

HZ

T_start: Time to start from power-off

CLK Output

HZ

T_resume: Time to resume from ST

Figure 4. Startup Timing (OE/ ST̅ Mode)

̅ ̅

Figure 5. Standby Resume Timing ( ST̅ Mode Only)

̅ ̅

Vdd

50% Vdd

OE Voltage

T_oe

Vdd

OE Voltage

50% Vdd

T_oe

CLK Output

HZ

T_oe: Time to re-enable the clock output

CLK Output

HZ

T_oe: Time to put the output in High Z mode

Figure 6. OE Enable Timing (OE Mode Only)

Figure 7. OE Disable Timing (OE Mode Only)

Note:

7. SiT8009 has “no runt” pulses and “no glitch” output during startup or resume.

Rev 1.04

Page 4 of 17

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SiT8009B

High Frequency, Low Power Oscillator

Performance Plots

[8]

DUT1

7.5

20

7.0

6.5

15

10

DUT6

DUT2

DUT7

DUT3

DUT8

DUT4

DUT9

DUT5

DUT10

Idd (mA)

6.0

5.5

-5

5.0

-10

4.5

4.0

115

-15

-20

117

119

121

123

125

127

129

131

133

135

137

-40

-30

-20

-10

0

10

20

30

40

50

60

70

80

Figure 8. Idd vs Frequency

Figure 9. Frequency vs Temperature, 1.8V

1.8 V

55

54

2.5 V

2.8 V

3.0 V

3.3 V

RMS period jitter (ps)

53

Duty cycle (%)

52

51

50

49

48

47

46

45

115

117

119

121

123

125

127

129

131

133

135

137

Figure 10. RMS Period Jitter vs Frequency

Figure 11. Duty Cycle vs Frequency

1.8 V

2.5 V

2.8 V

3.0 V

3.3 V

2.5

2.0

Rise time (ns)

1.5

Fall time (ns)

-40

-30

-20

-10

0

10

20

30

40

50

60

70

80

1.5

1.0

0.5

0.0

-40

-30

-20

-10

0

10

20

30

40

50

60

70

80

Figure 12. 20%-80% Rise Time vs Temperature

Figure 13. 20%-80% Fall Time vs Temperature

Rev 1.04

Page 5 of 17

www.sitime.com

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Objectid	8298711136
Reach Compliance Code	compliant
Country Of Origin	Malaysia, Taiwan, Thailand
Factory Lead Time	32 weeks
YTEOL	7.14
Other features	ENABLE/DISABLE FUNCTION; TR; ALSO COMPATIBLE WITH HCMOS O/P
maximum descent time	2.5 ns
Frequency Adjustment - Mechanical	NO
frequency stability	20%
JESD-609 code	e4
Installation features	SURFACE MOUNT
Nominal operating frequency	120 MHz
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
Oscillator type	LVCMOS
Output load	15 pF
physical size	2.5mm x 2.0mm x 0.75mm
longest rise time	2.5 ns
Maximum supply voltage	1.89 V
Minimum supply voltage	1.71 V
Nominal supply voltage	1.8 V
surface mount	YES
maximum symmetry	55/45 %
Terminal surface	Nickel/Palladium/Gold (Ni/Pd/Au)

SIT8009BI-11-18E-120.000000E

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