BCR08AM-12A
Triac
Low Power Use
REJ03G0343-0200
Rev.2.00
Nov 30, 2007
Features
•
•
•
•
I
T (RMS)
: 0.8 A
V
DRM
: 600 V
I
RGTI
, I
RGT III
: 5 mA
Planar Passivation Type
Outline
RENESAS Package code: PRSS0003EA-A
(Package name: TO-92)
2
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
3
13
1
2
Applications
Electric fan, air cleaner, and other general purpose control applications
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Note1
Symbol
V
DRM
V
DSM
Voltage class
12
600
720
Unit
V
V
REJ03G0343-0200
Page 1 of 6
Rev.2.00
Nov 30, 2007
BCR08AM-12A
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Notes: 1. Gate open.
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
—
Ratings
0.8
8
0.26
1
0.1
6
0.5
– 40 to +125
– 40 to +125
0.23
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 56°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
Gate trigger current
Note2
Symbol
I
DRM
V
TM
V
RGT
Ι
V
RGT
ΙΙΙ
I
RGT
Ι
I
RGT
ΙΙΙ
V
GD
R
th (j-c)
(dv/dt)c
Min.
—
—
—
—
—
—
0.1
—
0.5
Typ.
—
—
—
—
—
—
—
—
—
Max.
1.0
2.0
2.0
2.0
5
5
—
60
—
Unit
mA
V
V
V
mA
mA
V
°C/W
V/µs
Test conditions
Tj = 125°C, V
DRM
applied
Tc = 25°C, I
TM
= 1.2 A,
Instantaneous measurement
Tj = 25°C, V
D
= 6 V, R
L
= 6
Ω,
R
G
= 330
Ω
Tj = 25°C, V
D
= 6 V, R
L
= 6
Ω,
R
G
= 330
Ω
Tj = 125°C, V
D
= 1/2 V
DRM
Junction to case
Note3
Tj = 125°C
ΙΙ
ΙΙΙ
ΙΙ
ΙΙΙ
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutating voltage
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured at the T
2
terminal 1.5 mm away from the molded case.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
(di/dt)c
Time
Time
V
D
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 0.4 A/ms
3. Peak off-state voltage
V
D
= 400 V
Main Current
Main Voltage
(dv/dt)c
REJ03G0343-0200
Page 2 of 6
Rev.2.00
Nov 30, 2007
BCR08AM-12A
Performance Curves
Maximum On-State Characteristics
10
1
7
5
10
Rated Surge On-State Current
Tj = 25°C
Surge On-State Current (A)
9
8
7
6
5
4
3
2
1
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
On-State Current (A)
3
2
10
0
7
5
3
2
10
–1
1.0
1.5
2.0
2.5
3.0
3.5
4.0
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
7
5
3
Gate Trigger Current (Tj = t°C)
×
100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics ( II and III)
Gate Trigger Current vs.
Junction Temperature
10
3
7
5
3
2
10
2
7
5
3
2
10
1
–
60
–
40
–
20
V
GM
= 6V
V
GT
Typical Example
P
GM
= 1W
P
G(AV)
=
0.1W
I
GM
= 0.5A
Gate Voltage (V)
I
RGT I
, I
RGT III
V
GD
= 0.1V
3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
0 20 40 60 80 100 120 140
Gate Current (mA)
Junction Temperature (°C)
Maximum Transient Thermal
Impedance Characteristics
(Junction to case, Junction to ambient)
Transient Thermal Impedance (°C/W)
2
3
4
5
310 2 3 5 7 10 2 3 5 7 10 2 3 5 7 10
Gate Trigger Voltage (Tj = t°C)
×
100 (%)
Gate Trigger Voltage (Tj = 25°C)
Gate Trigger Voltage vs.
Junction Temperature
10
3
7
5
3
2
10
2
7
5
3
2
10
1
–
60
–
40
–
20
Typical Example
2
Junction to ambient
10
2
7
5
3
2
10
1
7
5
3
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
Junction to case
0 20 40 60 80 100 120 140
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
REJ03G0343-0200
Page 3 of 6
Rev.2.00
Nov 30, 2007
BCR08AM-12A
Allowable Case Temperature vs.
RMS On-State Current
160
Maximum On-State Power Dissipation
2.0
On-State Power Dissipation (W)
1.8
1.6
360° Conduction
1.4
Resistive,
1.2
inductive loads
1.0
0.8
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Case Temperature (°C)
140
120
100
80
60
40
Curves apply regardless
of conduction angle
360° Conduction
20
Resistive,
inductive loads
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
RMS On-State Current (A)
RMS On-State Current (A)
160
Repetitive Peak Off-State Current (Tj = t°C)
×
100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Allowable Ambient Temperature vs.
RMS On-State Current
Natural convection
No fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
Repetitive Peak Off-State Current vs.
Junction Temperature
10
5
7
5
3
2
7
5
3
2
7
5
3
2
–
60
–
40
–
20
Typical Example
Ambient Temperature (°C)
140
120
100
80
60
40
10
4
10
3
360° Conduction
20
Resistive,
inductive loads
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
10
2
0
20 40 60 80 100 120 140
RMS On-State Current (A)
Junction Temperature (°C)
Holding Current vs.
Junction Temperature
Holding Current (Tj = t°C)
×
100 (%)
Holding Current (Tj = 25°C)
10
3
7
5
3
2
Latching Current vs.
Junction Temperature
10
2
7
5
3
2
Typical Example
Distribution
T
2
+, G–
Typical Example
Latching Current (mA)
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
T
2
–, G–
Typical Example
0
40
80
120
160
10
1
–
60
–
40
–
20
0
20 40 60 80 100 120 140
–
40
Junction Temperature (°C)
Junction Temperature (°C)
REJ03G0343-0200
Page 4 of 6
Rev.2.00
Nov 30, 2007
BCR08AM-12A
Breakover Voltage vs.
Junction Temperature
Breakover Voltage (Tj = t°C)
×
100 (%)
Breakover Voltage (Tj = 25°C)
160
Breakover Voltage (dv/dt = xV/µs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/µs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
160
140
120
Typical Example
140
120
100
80
60
40
20
0
–
60
–
40
–
20
0
20 40 60 80 100 120 140
Typical Example
Tj = 125°C
I Quadrant
100
80
60
40
III Quadrant
20
0
10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/µs)
Commutation Characteristics
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
10
–1
Minimum
Characteristics
Value
Gate Trigger Current vs.
Gate Current Pulse Width
Gate Trigger Current (tw)
×
100 (%)
Gate Trigger Current (DC)
10
3
7
5
3
2
10
2
7
5
3
2
10
1 0
10
2 3 4 5 7 10
1
2 3 4 5 7 10
2
Typical Example
Tj = 125°C
I
T
= 1A
τ
= 500µs
V
D
= 200V
Typical Example
I
RGT I
I
RGT III
III Quadrant
I Quadrant
2
3
5 7 10
0
2
3
5 7 10
1
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Current Pulse Width (µs)
Gate Trigger Characteristics Test Circuits
6Ω
6Ω
6V
V
A
330Ω
6V
V
A
330Ω
Test Procedure II
Test Procedure III
REJ03G0343-0200
Page 5 of 6
Rev.2.00
Nov 30, 2007
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