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RJK03C1DPB-00#J5

Description
MOSFET N-CH 30V 60A LFPAK
CategoryDiscrete semiconductor    The transistor   
File Size272KB,9 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
Download Datasheet Parametric View All

RJK03C1DPB-00#J5 Overview

MOSFET N-CH 30V 60A LFPAK

RJK03C1DPB-00#J5 Parametric

Parameter NameAttribute value
Brand NameRenesas
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRenesas Electronics Corporation
Parts packaging codeLFPAK
package instruction,
Contacts5
Manufacturer packaging codePTZZ0005DA-A5
Reach Compliance Codecompliant
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
Preliminary
RJK03C1DPB
Silicon N Channel Power MOS FET with Schottky Barrier Diode
REJ03G1830-0310
Power Switching
Rev.3.10
Sep 29, 2009
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 1.7 m
Ω
typ. (at V
GS
= 10 V)
Pb-free
Halogen-free
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5 6 7 8
D D D D
5
4
4
G
3
12
1, 2, 3
4
5
Source
Gate
Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW
10
μs,
duty cycle
1%
2. Value at Tch = 25°C, Rg
50
Ω
3. Tc = 25°C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
I
AP Note 2
E
AR Note 2
Pch
Note3
θch-C
Tch
Tstg
Ratings
30
±20
60
240
60
28
78.4
65
1.92
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1830-0310 Rev.3.10 Sep 29, 2009
Page 1 of 6
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