BUJ303AX
9 October 2018
NPN power transistor
Product data sheet
1. General description
High voltage, high speed, planar passivated NPN power switching transistor in a SOT186A
(TO220F) "full pack" plastic package.
2. Features and benefits
•
•
•
•
Fast switching
Isolated package
Very high voltage capability
Very low switching and conduction losses
3. Applications
•
•
•
•
DC-to-DC converters
High frequency electronic lighting ballasts
Inverters
Motor control systems
4. Quick reference data
Table 1. Quick reference data
Symbol
I
CM
P
tot
V
CESM
Parameter
peak collector current
total power dissipation
collector-emitter peak
voltage
DC current gain
Conditions
Fig. 1; Fig. 2; Fig. 3
T
h
≤ 25 °C;
Fig. 4
V
BE
= 0 V
Min
-
-
-
Typ
-
-
-
Max
10
32
1000
Unit
A
W
V
Static characteristics
h
FE
I
C
= 5 mA; V
CE
= 5 V; T
h
= 25 °C;
Fig. 11
I
C
= 500 mA; V
CE
= 5 V; T
h
= 25 °C;
Fig. 11
10
14
22
25
35
35
WeEn Semiconductors
BUJ303AX
NPN power transistor
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
mb
Symbol Description
B
C
E
n.c.
base
collector
emitter
mounting base; isolated
Simplified outline
mb
Graphic symbol
C
B
E
sym123
1 2 3
TO-220F (SOT186A)
6. Ordering information
Table 3. Ordering information
Type number
BUJ303AX
Package
Name
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
Version
SOT186A
BUJ303AX
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
9 October 2018
2 / 13
WeEn Semiconductors
BUJ303AX
NPN power transistor
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Parameter
collector-emitter peak
voltage
collector-emitter voltage
collector current
peak collector current
base current
peak base current
total power dissipation
storage temperature
junction temperature
V
CC
L
C
L
B
V
CL(CE)
probe point
DUT
001aab999
Conditions
V
BE
= 0 V
I
B
= 0 A
Fig. 1; Fig. 2; Fig. 3
DC
T
h
≤ 25 °C;
Fig. 4
Min
-
-
-
-
-
-
-
-65
-
12
I
C
(A)
8
Max
1000
500
5
10
2
4
32
150
150
003aag028
Unit
V
V
A
A
A
A
W
°C
°C
I
Bon
V
BB
V
CL(CE)
≤
1000 V; V
CC
= 150 V; V
BB
= - 5 V;
L
B
= 1
µH;
L
C
= 200
µH
Fig. 1. Test circuit for reverse bias safe operating area
4
0
0
400
800
1200
V
CEclamp
(V)
T
j
≤ T
j(max)
°C
Fig. 2. Reverse bias safe operating area
BUJ303AX
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
9 October 2018
3 / 13
WeEn Semiconductors
BUJ303AX
NPN power transistor
10
2
I
C
(A)
10
I
CMmax
I
Cmax
1
(2)
003aag029
duty cycle = 0.01
II
(3)
(1)
t
p
= 10 µs
100 µs
1 ms
10 ms
DC
III
(3)
1
10
10
2
V
CEclamp
(V)
10
3
10
-1
I
(3)
10
-2
(1)
P
tot
maximum and P
tot
peak maximum lines.
(2)
Second breakdown limits.
(3)
I = Region of permissible DC operation.
II = Extension for repetitive pulse operation.
III = Extension during turn-on in single transistor converters provided that R
BE
≤ 100 Ω and t
p
≤ 0.6 μs.
Fig. 3. Forward bias safe operating area for T
mb
≤ 25 °C
120
P
der
(%)
80
03aa13
40
0
0
50
100
150
T
h
(°C)
200
Fig. 4. Normalized total power dissipation as a function of heatsink temperature
BUJ303AX
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
9 October 2018
4 / 13
WeEn Semiconductors
BUJ303AX
NPN power transistor
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol
R
th(j-h)
Parameter
thermal resistance
from junction to
heatsink
thermal resistance
from junction to
ambient free air
10
Z
th(j-h)
(K/W)
1
δ = 0.5
0.2
0.1
0.05
0.02
t
p
T
Conditions
with heatsink compound;
Fig. 5
Min
-
Typ
-
Max
3.95
Unit
K/W
R
th(j-a)
in free air
-
55
-
K/W
003aag067
10
-1
10
-2
0
P
tot
δ=
t
p
t
T
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
t
p
(s)
10
2
Fig. 5. Transient thermal impedance from junction to heatsink as a function of pulse duration
9. Isolation characteristics
Table 6. Isolation characteristics
Symbol
V
isol(RMS)
Parameter
RMS isolation voltage
Conditions
50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %;
T
h
= 25 °C; from all terminals to
external heatsink; clean and dust free
from collector to external heatsink;
f = 1 MHz; T
h
= 25 °C
Min
-
Typ
-
Max
2500
Unit
V
C
isol
isolation capacitance
-
10
-
pF
BUJ303AX
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
9 October 2018
5 / 13
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