FD400R12KE3HOSA1 datasheet, PDF

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FD400R12KE3HOSA1: DescriptionIGBT MODULE VCES 650V 400A; CategoryDiscrete semiconductor The transistor; File Size454KB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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FD400R12KE3HOSA1 Overview

IGBT MODULE VCES 650V 400A

FD400R12KE3HOSA1 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Infineon
Parts packaging code	MODULE
package instruction	FLANGE MOUNT, R-XUFM-X5
Contacts	5
Reach Compliance Code	compliant
ECCN code	EAR99
Factory Lead Time	14 weeks
Shell connection	ISOLATED
Maximum collector current (IC)	580 A
Collector-emitter maximum voltage	1200 V
Configuration	SINGLE WITH BUILT-IN DIODE
JESD-30 code	R-XUFM-X5
Number of components	1
Number of terminals	5
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal off time (toff)	830 ns
Nominal on time (ton)	400 ns

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TechnischeInformation/TechnicalInformation

IGBT-Module

IGBT-modules

FD400R12KE3

62mmC-SerienModulmitTrench/FeldstopIGBT3undEmitterControlledHighEfficiencyDiode

62mmC-seriesmodulewithtrench/fieldstopIGBT3andEmitterControlledHighEfficiencydiode

IGBT,Brems-Chopper/IGBT,Brake-Chopper

HöchstzulässigeWerte/MaximumRatedValues

Kollektor-Emitter-Sperrspannung

Collector-emittervoltage

Kollektor-Dauergleichstrom

ContinuousDCcollectorcurrent

PeriodischerKollektor-Spitzenstrom

Repetitivepeakcollectorcurrent

Gesamt-Verlustleistung

Totalpowerdissipation

Gate-Emitter-Spitzenspannung

Gate-emitterpeakvoltage

= 25°C

= 80°C, T

vj max

= 150°C

= 25°C, T

vj max

= 150°C

= 1 ms

= 25°C, T

vj max

= 150

CES

1200

400

580

800

2000

+/-20

min.

= 25°C

= 125°C

CE sat

GEth

Gint

ies

res

CES

GES

= 25°C

= 125°C

= 25°C

= 125°C

= 25°C

= 125°C

= 25°C

= 125°C

= 25°C

= 125°C

= 25°C

= 125°C

d on

5,0

typ.

1,70

2,00

5,8

3,70

1,9

28,0

1,10

0,25

0,30

0,09

0,10

0,55

0,65

0,13

0,18

17,0

25,0

42,0

62,0

max.

2,15

6,5

5,0

400

µC

Ω

µs

C nom

CRM

tot

GES

CharakteristischeWerte/CharacteristicValues

Kollektor-Emitter-Sättigungsspannung

Collector-emittersaturationvoltage

Gate-Schwellenspannung

Gatethresholdvoltage

Gateladung

Gatecharge

InternerGatewiderstand

Internalgateresistor

Eingangskapazität

Inputcapacitance

Rückwirkungskapazität

Reversetransfercapacitance

Kollektor-Emitter-Reststrom

Collector-emittercut-offcurrent

Gate-Emitter-Reststrom

Gate-emitterleakagecurrent

Einschaltverzögerungszeit,induktiveLast

Turn-ondelaytime,inductiveload

Anstiegszeit,induktiveLast

Risetime,inductiveload

Abschaltverzögerungszeit,induktiveLast

Turn-offdelaytime,inductiveload

Fallzeit,induktiveLast

Falltime,inductiveload

EinschaltverlustenergieproPuls

Turn-onenergylossperpulse

AbschaltverlustenergieproPuls

Turn-offenergylossperpulse

Kurzschlußverhalten

SCdata

Wärmewiderstand,ChipbisGehäuse

Thermalresistance,junctiontocase

= 400 A, V

= 15 V

= 400 A, V

= 15 V

= 16,0 mA, V

= V

, T

= 25°C

= -15 V ... +15 V

= 25°C

f = 1 MHz, T

= 25°C, V

= 25 V, V

= 0 V

f = 1 MHz, T

= 25°C, V

= 25 V, V

= 0 V

= 1200 V, V

= 0 V, T

= 25°C

= 0 V, V

= 20 V, T

= 25°C

= 400 A, V

= 600 V

= ±15 V

Gon

= 1,8

Ω

= 400 A, V

= 600 V

= ±15 V

Gon

= 1,8

Ω

= 400 A, V

= 600 V

= ±15 V

Goff

= 1,8

Ω

= 400 A, V

= 600 V

= ±15 V

Goff

= 1,8

Ω

= 400 A, V

= 600 V, L

= 80 nH

= ±15 V, di/dt = 6000 A/µs

Gon

= 1,8

Ω

= 400 A, V

= 600 V, L

= 80 nH

= ±15 V, du/dt = 4000 V/µs

Goff

= 1,8

Ω

≤

15 V, V

= 900 V

CEmax

= V

CES

-L

sCE

·di/dt

proIGBT/perIGBT

d off

off

thJC

thCH

vj op

-40

≤

10 µs, T

= 125°C

1600

0,03

0,062 K/W

K/W

125

°C

Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT

Thermalresistance,casetoheatsink

Paste

=1W/(m·K)/λ

grease

=1W/(m·K)

TemperaturimSchaltbetrieb

Temperatureunderswitchingconditions

preparedby:MK

approvedby:WR

dateofpublication:2013-10-03

revision:3.0

FD400R12KE3HOSA1 Related Products

	FD400R12KE3HOSA1	FD400R12KE3
Description	IGBT MODULE VCES 650V 400A	Data Acquisition ADCs/DACs - Specialized 4CH 500 MSPS DDS
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
Maker	Infineon	Infineon
Parts packaging code	MODULE	MODULE
package instruction	FLANGE MOUNT, R-XUFM-X5	FLANGE MOUNT, R-XUFM-X5
Contacts	5	5
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED
Maximum collector current (IC)	580 A	580 A
Collector-emitter maximum voltage	1200 V	1200 V
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
JESD-30 code	R-XUFM-X5	R-XUFM-X5
Number of components	1	1
Number of terminals	5	5
Maximum operating temperature	150 °C	150 °C
Package body material	UNSPECIFIED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	UNSPECIFIED	UNSPECIFIED
Terminal location	UPPER	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON
Nominal off time (toff)	830 ns	830 ns
Nominal on time (ton)	400 ns	400 ns

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