AOD3C50
500V,3A N-Channel MOSFET
General Description
• Trench Power AlphaMOS-II technology
• Low R
DS(ON)
• Low Ciss and Crss
• High Current Capability
• RoHS and Halogen Free Compliant
Product Summary
V
DS
@ T
j,max
I
DM
R
DS(ON),max
Q
g,typ
E
oss
@ 400V
600V
12A
< 1.4Ω
12nC
1.5µJ
Applications
• General Lighting for LED and CCFL
• AC/DC Power supplies for Industrial, Consumer, and
Telecom
100% UIS Tested
100% R
g
Tested
TO-252
DPAK
Top View
Bottom View
D
D
D
S
G
AOD3C50
S
G
G
S
Orderable Part Number
AOD3C50
Package Type
TO-252
Form
Tape & Reel
Minimum Order Quantity
2500
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
Symbol
V
DS
V
GS
T
C
=25°C
T
C
=100°C
L=1mH
C
H
Maximum
500
±30
3*
3
12
3
4.5
152
100
20
83
0.7
-55 to 150
300
Units
V
V
A
A
mJ
mJ
V/ns
W
W/°C
°C
°C
I
D
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
, T
STG
T
L
Repetitive avalanche energy
Single pulsed avalanche energy
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
T
C
=25°C
B
Power Dissipation
Derate above 25°C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A,D
Maximum Case-to-sink
A
D,F
Symbol
R
θJA
R
θCS
R
θJC
Typical
45
-
1.2
Maximum
55
0.5
1.5
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Case
* I
D
limited by Rated I
D
Rev.1.0: January 2014
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Page 1 of 6
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
I
D
=250µA, V
GS
=0V, T
J
=25°C
I
D
=250µA, V
GS
=0V, T
J
=150°C
I
D
=250µA, V
GS
=0V
V
DS
=500V, V
GS
=0V
V
DS
=400V, T
J
=125°C
V
DS
=0V, V
GS
=±30V
V
DS
=5V
,
I
D
=250µA
V
GS
=10V, I
D
=2.2A
V
DS
=40V, I
D
=1.5A
I
S
=1A,V
GS
=0V
C
Min
500
Typ
Max
Units
STATIC PARAMETERS
BV
DSS
BV
DSS
/∆TJ
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
FS
V
SD
I
S
I
SM
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Pulsed Current
600
0.4
1
10
±100
3
4.1
1.1
2.5
0.78
1
3
12
662
26
19
V
GS
=0V, V
DS
=0 to 400V, f=1MHz
35
V
GS
=0V, V
DS
=100V, f=1MHz
f=1MHz
9.7
3
12
V
GS
=10V, V
DS
=400V, I
D
=3A
3.4
4.4
21
V
GS
=10V, V
DS
=250V, I
D
=3A,
R
G
=25Ω
I
F
=3A,dI/dt=100A/µs,V
DS
=100V
28
32
21
260
2.3
25
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
µC
5
1.4
V
V/
o
C
µA
nA
V
Ω
S
V
A
A
pF
pF
pF
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
C
iss
C
oss
C
o(er)
C
o(tr)
C
rss
R
g
Output Capacitance
Effective output capacitance, energy
related
I
Effective output capacitance, time
related
J
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=100V, f=1MHz
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=3A,dI/dt=100A/µs,V
DS
=100V
A. The value of R
qJA
is measured with the device in a still air environment with T
A
=25°C.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C.
D. The R
qJA
is the sum of the thermal impedance from junction to case R
qJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=150°C.
G.These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
H. L=60mH, I
AS
=2.25A, V
DD
=150V, R
G
=10Ω,
Starting T
J
=25°C.
I. C
o(er)
is a fixed capacitance that gives the same stored energy as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS.
J. C
o(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: January 2014
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Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
10V
8
8V
10
I
D
(A)
I
D
(A)
6
7V
100
V
DS
=40V
-55°C
4
6.5V
1
125°C
25°C
2
6V
V
GS
=5.5V
0.1
0
5
10
15
20
25
30
2
V
DS
(Volts)
Figure 1: On-Region Characteristics
6
8
V
GS
(Volts)
Figure 2: Transfer Characteristics
4
10
0
3
Normalized On-Resistance
2.5
R
DS(ON)
(
Ω
)
2
1.5
1
0.5
0
0
3
4
5
6
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1
2
V
GS
=10V
3
2.5
2
1.5
1
0.5
0
-100
V
GS
=10V
I
D
=2.2A
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
-50
0
1.3
1.2
BV
DSS
(Normalized)
1.1
I
S
(A)
1
0.9
0.8
0.7
-100
1E+02
1E+01
1E+00
125°C
1E-01
1E-02
1E-03
1E-04
0.0
0.2
0.4
0.6
0.8
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
1.0
25°C
50
100
150
200
T
J
(°C)
Figure 5: Break Down vs. Junction Temparature
-50
0
Rev.1.0: January 2014
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Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
V
DS
=400V
I
D
=3A
Capacitance (pF)
10000
12
V
GS
(Volts)
1000
C
iss
9
100
6
C
oss
3
10
C
rss
0
0
15
20
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
5
10
25
1
0.1
10
100
V
DS
(Volts)
Figure 8: Capacitance Characteristics
1
1000
2.5
100
2
10
1.5
E
oss
1
I
D
(Amps)
Eoss(uJ)
R
DS(ON)
limited
1
10µs
100µs
1ms
DC
0.5
0.1
T
J(Max)
=150°C
T
C
=25°C
0.01
0
100
200
300
400
V
DS
(Volts)
Figure 9: Coss stored Energy
500
1
10ms
0
100
1000
V
DS
(Volts)
Figure 10: Maximum Forward Biased Safe Operating Area
(Note F)
10
100
3.5
3
Power Dissipation (W)
80
Current rating I
D
(A)
2.5
2
1.5
1
0.5
0
0
25
75
100
125
T
CASE
(°C)
Figure 11: Power De-rating (Note B)
50
150
0
0
25
75
100
125
T
CASE
(°C)
Figure 12: Current De-rating (Note F)
50
150
60
40
20
Rev.1.0: January 2014
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Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
T
J(Max)
=150°C
T
C
=25°C
250
T
J(Max)
=150°C
T
A
=25°C
800
Power (W)
200
Power (W)
600
150
400
100
200
50
0
0.0001
0.01
0.1
1
10
Pulse Width (s)
Figure 13: Single Pulse Power Rating Junction-to-
Case (Note F)
0.001
0
0.0001
0.1
1
10
100
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-
Ambient (Note G)
0.001
0.01
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=1.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Single Pulse
P
D
T
on
T
0.01
0.001
0.00001
0.0001
0.01
0.1
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note F)
0.001
1
10
10
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=55°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Z
θ
JA
Normalized Transient
Thermal Resistance
1
0.1
P
D
Single Pulse
T
on
T
0.01
0.001
0.001
0.01
1
10
100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
0.1
1000
10000
Rev.1.0: January 2014
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Page 5 of 6
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