AOD514/AOI514/AOY514
30V N-Channel AlphaMOS
General Description
• Latest Trench Power MOSFET technology
• Very Low R
DS(on)
at 4.5V V
GS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 4.5V)
30V
46A
< 5.9mΩ
< 11.9mΩ
Application
• DC/DC Converters in Computing
• Isolated DC/DC Converters in Telecom and Industrial
100% UIS Tested
100% R
g
Tested
TO252 DPAK: AOD514
TopView
Bottom View
TO251A IPAK: AOI514
TO251B (IPAK short lead): AOY514
Top View
Bottom View
D
D
D
G
D
G
S
D
S
G
G
D
S
S
D
S
G
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.1mH
V
DS
Spike
Power Dissipation
Power Dissipation
B
C
C
Maximum
30
±20
46
36
163
17
13
25
31
36
50
25
2.5
1.6
-55 to 175
Units
V
V
A
V
GS
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
DSM
I
AS
E
AS
V
SPIKE
P
D
P
DSM
T
J
, T
STG
100ns
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
A
A
mJ
V
W
W
°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
16
41
2.5
Max
20
50
3
Units
°
C/W
°
C/W
°
C/W
Rev.6.0: July 2013
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Page 1 of 6
AOD514/AOI514/AOY514
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
Parameter
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=30V, V
GS
=0V
T
J
=55°
C
V
DS
=0V, V
GS
= ±20V
V
DS
=V
GS，
I
D
=250µA
V
GS
=10V, I
D
=20A
R
DS(ON)
g
FS
V
SD
I
S
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=20A
Forward Transconductance
Diode Forward Voltage
V
DS
=5V, I
D
=20A
I
S
=1A,V
GS
=0V
G
Min
30
Typ
Max
Units
V
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
1
5
100
1.6
T
J
=125°
C
2
4.3
5.4
8.5
91
0.7
1
46
1187
2.4
5.9
7.5
11.9
µA
nA
V
mΩ
mΩ
S
V
A
pF
pF
pF
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
0.7
V
GS
=0V, V
DS
=15V, f=1MHz
483
60
1.5
18
2.3
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
I
F
=20A, dI/dt=500A/µs
1in
2
V
GS
=10V, V
DS
=15V, I
D
=20A
8.8
4.1
3.6
7.3
V
GS
=10V, V
DS
=15V, R
L
=0.75Ω,
R
GEN
=3Ω
10.5
21.8
5
14.7
24
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=500A/µs
A. The value of R
θJA
is measured with the device mounted on
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature T
J(MAX)
=175°C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.6.0: July 2013
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Page 2 of 6
AOD514/AOI514/AOY514
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10V
80
5V
4.5V
7V
4V
I
D
(A)
80
100
V
DS
=5V
60
I
D
(A)
60
40
40
125°C
25°C
20
V
GS
=3.0V
20
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
12
10
R
DS(ON)
(mΩ )
Ω
8
6
4
2
0
0
15
20
25
30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
5
10
V
GS
=4.5V
Normalized On-Resistance
0
0
1
2
3
4
5
6
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
1.6
V
GS
=10V
I
D
=20A
1.4
1.2
V
GS
=10V
1
V
GS
=4.5V
I
D
=20A
0.8
0
25
50
75
100
125
150
175
200
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
12
I
D
=20A
9
125°C
R
DS(ON)
(mΩ )
Ω
6
I
S
(A)
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
25°C
1.0E-04
1.0E-05
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
125°C
25°C
3
0
Rev.6.0: July 2013
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Page 3 of 6
AOD514/AOI514/AOY514
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=15V
I
D
=20A
Capacitance (pF)
1600
1400
C
iss
1200
V
GS
(Volts)
6
1000
800
600
400
2
200
0
0
10
15
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
5
20
0
0
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
C
rss
C
oss
8
4
1000.0
100.0
10µs
300
R
DS(ON)
I
D
(Amps)
10.0
10µs
100µs
DC
1ms
Power (W)
200
1.0
0.1
0.0
0.01
0.1
1
V
DS
(Volts)
10
100
100
T
J(Max)
=150°C
T
C
=25°C
T
J(Max)
=150°C
T
C
=25°C
0
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
on
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
J,PK
C
DM
θJC θJC
In descending order
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
R
θJC
=3°C/W
θJC
0.1
Single Pulse
Single Pulse
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.6.0: July 2013
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Page 4 of 6
AOD514/AOI514/AOY514
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
Current rating I
D
(A)
0
75
100
125
T
CASE
(°C)
°
Figure 12: Power De-rating (Note F)
25
50
150
40
30
20
10
0
60
50
40
30
20
10
0
0
75
100
125
150
T
CASE
(°C)
°
Figure 13: Current De-rating (Note F)
25
50
175
Power Dissipation (W)
10000
T
A
=25°C
1000
Power (W)
100
10
1
1E-05
0.001
0.1
10
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
1
D=T
on
/T
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=50°C/W
R =64°C/W
θJA
In descending order
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
Single Pulse
Single Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.6.0: July 2013
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Page 5 of 6
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