SA2B-M3, SA2D-M3, SA2G-M3, SA2J-M3, SA2K-M3, SA2M-M3
www.vishay.com
Vishay General Semiconductor
Surface Mount Glass Passivated Rectifier
FEATURES
•
•
•
•
•
•
•
Low profile package
Ideal for automated placement
Glass passivated pellet chip junction
Low forward voltage drop
Low leakage current
High forward surge capability
Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DO-214AC (SMA)
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
at I
F
= 2.0 A
T
J
max.
Package
Diode variations
2.0 A
100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
55 A
3.0 μA
0.854 V
150 °C
DO-214AC (SMA)
Single die
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes for consumer
and telecommunication.
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - RoHS-compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes the cathode end
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Max. repetitive peak reverse voltage
Average forward current
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
Operating junction and storage temperature range
V
RRM
I
F(AV)
I
FSM
T
J
, T
STG
SYMBOL
SA2B
2B
100
SA2D
2D
200
SA2G
2G
400
2.0
55
-55 to +150
SA2J
2J
600
SA2K
2K
800
SA2M
2M
1000
V
A
A
°C
UNIT
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
I
F
= 1.0 A
Instantaneous forward voltage
I
F
= 2.0 A
I
F
= 1.0 A
I
F
= 2.0 A
Reverse current
Typical reverse recovery time
Typical junction capacitance
Rated V
R
T
J
= 25 °C
V
F (1)
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
R (2)
t
rr
C
J
SYMBOL
TYP.
0.911
0.954
0.805
0.854
0.19
28
1.5
11
MAX.
-
1.1
-
0.95
3
90
-
-
μA
μs
pF
V
UNIT
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
4.0 V, 1 MHz
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
Revision: 19-Feb-16
Document Number: 89930
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SA2B-M3, SA2D-M3, SA2G-M3, SA2J-M3, SA2K-M3, SA2M-M3
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
R
JA
(1)
R
JL
(1)
SA2B
SA2D
SA2G
80
12
SA2J
SA2K
SA2M
UNIT
°C/W
Note
(1)
Thermal resistance from junction to ambient and from junction to lead, PCB mounted on 0.79" x 0.79" (20 mm x 20 mm) copper pad areas
ORDERING INFORMATION
(Example)
PREFERRED P/N
SA2J-M3/61T
SA2J-M3/5AT
UNIT WEIGHT (g)
0.064
0.064
PREFERRED PACKAGE CODE
61T
5AT
BASE QUANTITY
1800
7500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
3.0
70
Average Forward Rectified Current (A)
Peak Forward
Surge
Current (A)
Resistive or Inductive Load
2.5
Lead Temperature
2.0
8.3 ms
Single
Half
Sine-Wave
60
50
40
30
20
10
0
1.5
Ambient Temperature
P.C.B. Mounted on
0.79" x 0.79" (20 mm x 20 mm)
Copper Pad Areas
0
25
50
75
100
125
150
175
1.0
0.5
0
1
10
100
Lead Temperature (°C)
Number of Cycles at 50 Hz
Fig. 1 - Max. Forward Current Derating Curve
Fig. 3 - Max. Non-Repetitive Peak Forward Surge Current
2.5
D = 0.5
D = 0.8
10
Instantaneous Forward Current (A)
Average Power Loss (W)
2.0
D = 0.3
D = 0.2
T
J
= 150 °C
T
J
= 125 °C
1
T
J
= 25 °C
1.5
D = 0.1
D = 1.0
1.0
T
0.5
D = t
p
/T
0
0
0.5
1.0
1.5
2.0
2.5
t
p
0.1
0.5
0.7
0.9
1.1
1.3
Average Forward Current (A)
Instantaneous Forward Voltage (V)
Fig. 2 - Forward Power Loss Characteristics
Fig. 4 - Typical Instantaneous Forward Characteristics
Revision: 19-Feb-16
Document Number: 89930
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SA2B-M3, SA2D-M3, SA2G-M3, SA2J-M3, SA2K-M3, SA2M-M3
www.vishay.com
Vishay General Semiconductor
100
1000
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (μA)
Junction to Ambient
100
T
J
= 150 °C
10
T
J
= 125 °C
10
1
T
J
= 25 °C
0.1
0.01
10
20
30
40
50
60
70
80
90
100
1
0.01
0.1
1
10
100
1000
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 5 - Typical Reverse Leakage Characteristics
Fig. 7 - Typical Transient Thermal Impedance
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
10
1
0.1
1
10
100
Reverse Voltage (V)
Junction Capacitance (pF)
Fig. 6 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.066 (1.68)
MIN.
0.074 (1.88)
MAX.
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 19-Feb-16
Document Number: 89930
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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www.vishay.com
Vishay
Disclaimer
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Revision: 08-Feb-17
1
Document Number: 91000