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SG-8003LB-SCB

Description
OSC PROG CMOS 3.3V 50PPM STBY
CategoryPassive components   
File Size350KB,2 Pages
ManufacturerEPSON
Websitehttp://www.epsondevice.com
Environmental Compliance
Download Datasheet Parametric View All

SG-8003LB-SCB Overview

OSC PROG CMOS 3.3V 50PPM STBY

SG-8003LB-SCB Parametric

Parameter NameAttribute value
typeXO (Standard)
Programmable typeProgrammed by Digi-Key (please enter your desired frequency on the website order form)
Available frequency range1MHz ~ 166MHz
Functionstandby
outputCMOS
Voltage - Power3.3V
frequency stability±50ppm
Frequency stability (overall)-
Operating temperature-20°C ~ 70°C
spread spectrum bandwidth-
Current - Power (maximum)15mA
grade-
Installation typesurface mount
Package/casing4-TESOP (0.110", 2.80mm wide)
size/dimensions0.197" long x 0.110" wide (5.00mm x 2.80mm)
high0.047"(1.19mm)
Current - Power (disabled) (maximum)50µA
Crystal oscillator
Epson Toyocom
Product Number (please contact us)
CRYSTAL OSCILLATOR
PROGRAMMABLE
X1G003xx1xxxx00
SG - 8003
series
Frequency
range
Supply
voltage
Function
:
:
:
1 MHz to 166 MHz
1.8 V / 2.5 V / 3.0 V / 3.3V
Output enable(OE) or Standby(
ST
)
Short
mass production lead time by PLL technology.
SG-Writer
available to purchase.
Please contact Epson Toyocom or local sales representative.
Specifications (characteristics)
Item
Output frequency range
Supply voltage
Storage temperature
Operating temperature
Frequency tolerance
Symbol
f
0
V
CC
T_stg
T_use
f_tol
Specifications
PD
/
SD
PC
/
SC
1 MHz to 166 MHz
1.8 V Typ.
2.5 V Typ.
3.3 V Typ.
1.6 V to 2.2 V
2.2 V to 2.8 V
2.7 V to 3.6 V
-40
C
to +85 °C
-20
C
to +70 °C / -40
C
to +85 °C
B:
50 
10
-6
, C:
100 
10
-6
L:50 × 10
-6
, M:
100 
10
-6
3.5 mA Max.
4.0 mA Max.
PE
/
SE
5.0 mA Max.
6.5 mA Max.
8.5 mA Max.
10.5 mA Max.
12.5 mA Max.
6.0 mA Max.
7.0 mA Max.
8.5 mA Max.
10.0 mA Max.
Remarks
Store as bare product.
-20
C
to +70
C
-40
C
to +85
C
No load condition,
No load condition,
No load condition,
1 MHz≦f
0
≦25
MHz
25 MHz<f
0
≦50
MHz
50 MHz<f
0
≦75
MHz
Current consumption
I
CC
No load condition, 75 MHz<f
0
≦100
MHz
No load condition, 100 MHz<f
0
≦125
MHz
No load condition, 125 MHz<f
0
≦166
MHz
OE=GND (PE,PD,PC)
ST
=GND (SE,SD,SC)
50 % V
CC
level, L_CMOS
15 pF
I
OH
=-4 mA(PD,SD,PE,SE), -8.0 mA(PC,SC)
I
OL
= 4 mA(PD,SD,PE,SE), 8.0 mA(PC,SC)
Output disable current
Stand-by current
Symmetry
Output voltage
Output load condition
(CMOS)
Input voltage
Rise and Fall time
Start-up time
Frequency aging
I_dis
I_std
SYM
V
OH
V
OL
L_CMOS
V
IH
V
IL
15.0 mA Max.
8 mA Max.
50 µA Max.
45 % to 55 %
90 % V
CC
Min.
V
CC
-0.4 V Min.
10 % V
CC
Max.
0.4 V Max.
15 pF Max.
80 % V
CC
Min.
20 % V
CC
Max.
5.0 ns Max.
2.5 ns Max.
5 ms Max.
±3 × 10
-6
/ year Max.
OE terminal or
ST
terminal
1 MHz≦f
0
<80
MHz
20 % V
CC
to 80 % V
CC
80 MHz≦f
0
≦166
MHz level, L_CMOS=15 pF
t=0 at 90 % V
CC
+25 °C, First year, V
CC
=1.8 V, 2.5 V, 3.3 V
t
r
/
t
f
t_str
f_aging
Current consumption
Current consumption (Typ.)
15
PE/SE
PD/SD/PC/SC
10
ICC (mA)
5
0
0
20
40
60
100
120
80
Frequency [MHz]
140
160
180
http://www.epsontoyocom.co.jp
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