SN74V293-6GGM datasheet, PDF - EEWORLD Datasheet

SN74V293-6GGM: DescriptionFIFO 65536 x 18 Synch FIFO Memory; Categorystorage storage; File Size825KB，52 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/

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FIFO 65536 x 18 Synch FIFO Memory

Parameter Name	Attribute value
Brand Name	Texas Instruments
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	BGA
package instruction	LFBGA, BGA100,10X10,32
Contacts	100
Reach Compliance Code	_compli
ECCN code	EAR99
Factory Lead Time	1 week
Is Samacsys	N
Maximum access time	4.5 ns
Other features	CAN ALSO BE CONFIGURED AS 131072 X 9
Spare memory width	9
Maximum clock frequency (fCLK)	166 MHz
period time	6 ns
JESD-30 code	S-PBGA-B100
JESD-609 code	e0
length	10 mm
memory density	1179648 bi
Memory IC Type	OTHER FIFO
memory width	18
Humidity sensitivity level	3
Number of functions	1
Number of terminals	100
word count	65536 words
character code	64000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64KX18
Exportable	YES
Package body material	PLASTIC/EPOXY
encapsulated code	LFBGA
Encapsulate equivalent code	BGA100,10X10,32
Package shape	SQUARE
Package form	GRID ARRAY, LOW PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	220
power supply	3.3 V
Certification status	Not Qualified
Maximum seat height	1.4 mm
Maximum standby current	0.015 A
Maximum slew rate	0.035 mA
Maximum supply voltage (Vsup)	3.45 V
Minimum supply voltage (Vsup)	3.15 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	10 mm
Base Number Matches	1

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