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SRT19HA0G

Description
DIODE SCHOTTKY 90V 1A TS-1
Categorysemiconductor    Discrete semiconductor   
File Size199KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

SRT19HA0G Overview

DIODE SCHOTTKY 90V 1A TS-1

SRT19HA0G Parametric

Parameter NameAttribute value
Diode typeSchottky
Voltage - DC Reverse (Vr) (Maximum)90V
Current - average rectification (Io)1A
Voltage at different If - Forward (Vf800mV @ 1A
speedFast recovery = < 500 ns, > 200mA (Io)
Current at different Vr - Reverse leakage current100µA @ 90V
Capacitance at different Vr, F-
Installation typeThrough hole
Package/casingT-18, axial
Supplier device packagingTS-1
Operating Temperature - Junction-55°C ~ 150°C
SRT12 thru SRT115
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Low forward voltage drop
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Schottky Barrier Rectifier
MECHANICAL DATA
Case:
TS-1
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Weight:
0.2g (approximately)
TS-1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@1A
Maximum reverse current @ rated VR
T
J
=25
T
J
=100℃
T
J
=125
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
0.55
0.5
I
R
Cj
R
θJA
T
J
T
STG
- 55 to +125
10
-
110
5
-
80
50
- 55 to +150
- 55 to +150
SRT
12
20
14
20
SRT
13
30
21
30
SRT
14
40
28
40
SRT
15
50
35
50
1
25
0.70
0.80
0.1
-
2
28
O
SRT
16
60
42
60
SRT
19
90
63
90
SRT
110
100
70
100
SRT
115
150
105
150
UNIT
V
V
V
A
A
0.90
V
mA
pF
C/W
O
O
Typical junction capacitance (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300
μs,
1% duty cycle
Note 2: Measured at 1.0 MHz and Applied V
R
=4.0 Volts
C
C
Document Number: DS_D1308042
Version: H13
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