BUK7606-75B,118 datasheet, PDF

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BUK7606-75B,118: DescriptionMOSFET N-CH 75V 75A D2PAK; CategoryDiscrete semiconductor The transistor; File Size768KB，13 Pages; ManufacturerNexperia; Websitehttps://www.nexperia.com

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BUK7606-75B,118 Overview

MOSFET N-CH 75V 75A D2PAK

BUK7606-75B,118 Parametric

Parameter Name	Attribute value
Brand Name	Nexperia
Parts packaging code	D2PAK
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Manufacturer packaging code	SOT404
Reach Compliance Code	not_compliant
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	852 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	75 V
Maximum drain current (ID)	75 A
Maximum drain-source on-resistance	0.0056 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	638 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

BUK7606-75B,118 Preview

BUK7606-75B

N-channel TrenchMOS standard level FET

Rev. 03 — 3 February 2011

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits



AEC Q101 compliant



Low conduction losses due to low

on-state resistance



Suitable for standard level gate drive

sources



Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications



12 V, 24 V and 42 V loads



Automotive systems



General purpose power switching



Motors, lamps and solenoids

1.4 Quick reference data

Table 1.

Symbol

tot

Quick reference data

Parameter

drain-source

voltage

drain current

total power

dissipation

drain-source

on-state

resistance

Conditions

≥

25 °C; T

≤

175 °C

= 10 V; T

= 25 °C;

see

Figure 1;

see

Figure 3

= 25 °C; see

Figure 2

[1]

Min

Typ

Max Unit

300

Static characteristics

DSon

= 10 V; I

= 25 A;

= 25 °C; see

Figure 11;

see

Figure 12

4.8

5.6

mΩ

Nexperia

BUK7606-75B

N-channel TrenchMOS standard level FET

Table 1.

Symbol

DS(AL)S

Quick reference data

…continued

Parameter

Conditions

Min

Typ

Max Unit

852

Avalanche ruggedness

non-repetitive

= 75 A; V

sup

≤

75 V;

drain-source

= 50

Ω;

= 10 V;

avalanche energy T

j(init)

= 25 °C; unclamped

gate-drain charge V

= 10 V; I

= 25 A;

= 60 V; T

= 25 °C;

see

Figure 13

Dynamic characteristics

[1]

Continuous current is limited by package.

2. Pinning information

Table 2.

Pinning information

Symbol Description

gate

drain

[1]

source

mounting base; connected to

drain

Simplified outline

Graphic symbol

mbb076

SOT404 (D2PAK)

[1]

It is not possible to make connection to pin 2.

3. Ordering information

Table 3.

Ordering information

Package

Name

BUK7606-75B

D2PAK

Description

Version

plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404

(one lead cropped)

Type number

BUK7606-75B

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 03 — 3 February 2011

2 of 13

Nexperia

BUK7606-75B

N-channel TrenchMOS standard level FET

4. Limiting values

Table 4.

Symbol

DGR

Limiting values

Parameter

drain-source voltage

drain-gate voltage

gate-source voltage

drain current

= 100 °C; V

= 10 V; see

Figure 1

= 25 °C; V

= 10 V; see

Figure 1;

see

Figure 3

tot

stg

DS(AL)S

peak drain current

total power dissipation

storage temperature

junction temperature

source current

peak source current

non-repetitive drain-source

avalanche energy

= 25 °C

pulsed; t

≤

10 µs; T

= 25 °C

= 75 A; V

sup

≤

75 V; R

= 50

Ω;

= 10 V; T

j(init)

= 25 °C; unclamped

[2]

[1]

[2]

[1]

In accordance with the Absolute Maximum Rating System (IEC 60134).

Conditions

≥

25 °C; T

≤

175 °C

= 20 kΩ

Min

-20

-55

Max

159

638

300

175

159

638

852

Unit

°C

= 25 °C; pulsed; t

≤

10 µs;

see

Figure 3

= 25 °C; see

Figure 2

Source-drain diode

Avalanche ruggedness

[1]

[2]

Continuous current is limited by package.

Current is limited by power dissipation chip rating.

180

(A)

160

140

120

100

Capped at 75 A due to package

03ng89

120

der

(%)

03na19

100

125

150

175

200

(°C)

100

150

(°C)

200

Fig 1.

Normalized continuous drain current as a

function of mounting base temperature

Fig 2.

Normalized total power dissipation as a

function of mounting base temperature

BUK7606-75B

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 03 — 3 February 2011

3 of 13

Nexperia

BUK7606-75B

N-channel TrenchMOS standard level FET

(A)

Limit R

DSon

= V

03ng87

= 10

µs

100

µs

Capped at 75 A due to package

1 ms

10 ms

100 ms

−1

(V)

Fig 3.

Safe operating area; continuous and peak drain currents as a function of drain-source voltage

5. Thermal characteristics

Table 5.

Symbol

th(j-mb)

th(j-a)

Thermal characteristics

Parameter

thermal resistance from

junction to mounting base

thermal resistance from

junction to ambient

Conditions

see

Figure 4

mounted on a printed-circuit board;

minimum footprint

Min

Typ

Max

0.5

Unit

K/W

th(j-mb)

(K/W)

−1

03ng88

= 0.5

0.2

0.1

0.05

−2

0.02

single shot

−3

−6

−5

−4

−3

−2

−1

(s)

Fig 4.

Transient thermal impedance from junction to mounting base as a function of pulse duration

BUK7606-75B

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 03 — 3 February 2011

4 of 13

Nexperia

BUK7606-75B

N-channel TrenchMOS standard level FET

6. Characteristics

Table 6.

Symbol

(BR)DSS

GS(th)

Characteristics

Parameter

drain-source

breakdown voltage

gate-source threshold

voltage

Conditions

= 0.25 mA; V

= 0 V; T

= 25 °C

= 0.25 mA; V

= 0 V; T

= -55 °C

= 1 mA; V

= V

; T

= 25 °C;

see

Figure 10

= 1 mA; V

= V

; T

= 175 °C;

see

Figure 10

= 1 mA; V

= V

; T

= -55 °C;

see

Figure 10

DSS

GSS

DSon

drain leakage current

gate leakage current

drain-source on-state

resistance

= 75 V; V

= 0 V; T

= 25 °C

= 75 V; V

= 0 V; T

= 175 °C

= 20 V; V

= 0 V; T

= 25 °C

= -20 V; V

= 0 V; T

= 25 °C

= 10 V; I

= 25 A; T

= 175 °C;

see

Figure 11;

see

Figure 12

= 10 V; I

= 25 A; T

= 25 °C;

see

Figure 11;

see

Figure 12

Dynamic characteristics

G(tot)

iss

oss

rss

d(on)

d(off)

total gate charge

gate-source charge

gate-drain charge

input capacitance

output capacitance

reverse transfer

capacitance

turn-on delay time

rise time

turn-off delay time

fall time

internal drain

inductance

from drain lead 6 mm from package to

centre of die ; T

= 25 °C

from upper edge of drain mounting base

to centre of die ; T

= 25 °C

internal source

inductance

source-drain voltage

reverse recovery time

recovered charge

from source lead to source bond pad ;

= 25 °C

= 40 A; V

= 0 V; T

= 25 °C;

see

Figure 15

= 20 A; dI

/dt = -100 A/µs;

= -10 V; V

= 30 V; T

= 25 °C

= 30 V; R

= 1.2

Ω;

= 10 V;

G(ext)

= 10

Ω;

= 25 °C

= 0 V; V

= 25 V; f = 1 MHz;

= 25 °C; see

Figure 14

= 25 A; V

= 60 V; V

= 10 V;

= 25 °C; see

Figure 13

5585

845

263

128

4.5

2.5

7.5

7446

1014

360

Min

Typ

0.02

4.8

Max

4.4

500

100

11.8

5.6

Unit

µA

mΩ

Static characteristics

Source-drain diode

0.85

253

1.2

BUK7606-75B

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 03 — 3 February 2011

5 of 13

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