BUK961R6-40E,118 datasheet, PDF

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BUK961R6-40E,118: DescriptionMOSFET N-CH 40V 120A D2PAK; Categorysemiconductor Discrete semiconductor; File Size728KB，13 Pages; ManufacturerNexperia; Websitehttps://www.nexperia.com; Environmental Compliance

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BUK961R6-40E,118 Overview

MOSFET N-CH 40V 120A D2PAK

BUK961R6-40E,118 Parametric

Parameter Name	Attribute value
FET type	N channel
technology	MOSFET (metal oxide)
Drain-source voltage (Vdss)	40V
Current - Continuous Drain (Id) at 25°C	120A（Tc）
Drive voltage (maximum Rds On, minimum Rds On)	5V
Rds On (maximum value) when different Id, Vgs	1.4 milliohms @ 25A, 10V
Vgs (th) (maximum value) when different Id	2.1V @ 1mA
Gate charge (Qg) at different Vgs (maximum value)	120nC @ 5V
Vgs (maximum value)	±10V
Input capacitance (Ciss) at different Vds (maximum value)	16400pF @ 25V
FET function	-
Power dissipation (maximum)	357W（Tc）
Operating temperature	-55°C ~ 175°C（TJ）
Installation type	surface mount
Supplier device packaging	D2PAK
Package/casing	TO-263-3, D²Pak (2-lead + tab), TO-263AB

BUK961R6-40E,118 Preview

BUK961R6-40E

28 July 2016

N-channel TrenchMOS logic level FET

Product data sheet

1. General description

Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology.

This product has been designed and qualified to AEC Q101 standard for use in high

performance automotive applications.

2. Features and benefits

•

AEC Q101 compliant

Repetitive avalanche rated

Suitable for thermally demanding environments due to 175 °C rating

True logic level gate with Vgst(th) rating of greater than 0.5V at 175 °C

3. Applications

•

12 V Automotive systems

Motors, lamps and solenoid control

Start-Stop micro-hybrid applications

Transmission control

Ultra high performance power switching

4. Quick reference data

Table 1.

Symbol

tot

DSon

Quick reference data

Parameter

drain-source voltage

drain current

total power dissipation

Conditions

≥ 25 °C; T

≤ 175 °C

= 5 V; T

= 25 °C;

Fig. 2

= 25 °C;

Fig. 1

= 5 V; I

= 25 A; T

= 25 °C;

Fig. 11

[1]

Min

Typ

Max

120

349

Unit

Static characteristics

drain-source on-state

resistance

gate-drain charge

1.35

1.6

mΩ

Dynamic characteristics

= 5 V; I

= 25 A; V

= 32 V;

Fig. 13; Fig. 14

[1]

Continuous current is limited by package.

40.9

Nexperia

BUK961R6-40E

N-channel TrenchMOS logic level FET

5. Pinning information

Table 2.

Pinning information

Symbol Description

gate

drain

source

mounting base; connected to

drain

mbb076

Simplified outline

Graphic symbol

D2PAK (SOT404)

6. Ordering information

Table 3.

Ordering information

Package

Name

BUK961R6-40E

D2PAK

Description

plastic single-ended surface-mounted package

(D2PAK); 3 leads (one lead cropped)

Version

SOT404

Type number

7. Marking

Table 4.

Marking codes

Marking code

BUK961R6-40E

Type number

BUK961R6-40E

8. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

DGR

Parameter

drain-source voltage

drain-gate voltage

gate-source voltage

Conditions

≥ 25 °C; T

≤ 175 °C

= 20 kΩ

≤ 175 °C; DC

≤ 175 °C; Pulsed

tot

total power dissipation

drain current

= 25 °C;

Fig. 1

= 25 °C; V

= 5 V;

Fig. 2

= 100 °C; V

= 5 V;

Fig. 2

stg

BUK961R6-40E

Min

-10

[1][2]

Max

349

120

1348

175

Unit

°C

2 / 13

-15

[3]

-55

peak drain current

storage temperature

= 25 °C; pulsed; t

≤ 10 µs;

Fig. 3

All information provided in this document is subject to legal disclaimers.

Product data sheet

28 July 2016

Nexperia

BUK961R6-40E

N-channel TrenchMOS logic level FET

Symbol

DS(AL)S

Parameter

junction temperature

Conditions

Min

-55

Max

175

Unit

°C

Source-drain diode

source current

peak source current

= 25 °C

pulsed; t

≤ 10 µs; T

= 25 °C

= 120 A; V

sup

≤ 40 V; R

= 50 Ω;

= 5 V; T

j(init)

= 25 °C; unclamped;

Fig. 4

[1]

[2]

[3]

[4]

[5]

120

der

(%)

[3]

120

1348

Avalanche ruggedness

non-repetitive drain-source

avalanche energy

[4][5]

1008

Accumulated pulse duration up to 50 hours delivers zero defect ppm

Significantly longer life times are achieved by lowering T

and or V

Continuous current is limited by package.

Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.

Refer to application note AN10273 for further information.

03aa16

400

(A)

300

003aag332

200

(1)

100

150

(°C)

200

100

150

(° C)

200

Fig. 1.

Normalized total power dissipation as a

function of mounting base temperature

Fig. 2.

Continuous drain current as a function of

mounting base temperature

BUK961R6-40E

All information provided in this document is subject to legal disclaimers.

Product data sheet

28 July 2016

3 / 13

Nexperia

BUK961R6-40E

N-channel TrenchMOS logic level FET

(A)

Limit R

DSon

= V

/ I

=10

100

003aag333

1 ms

10 ms

100 ms

-1

(V)

Fig. 3.

Safe operating area; continuous and peak drain currents as a function of drain-source voltage

(A)

(1)

003aag343

(2)

(3)

-1

-3

-2

-1

(ms)

Fig. 4.

Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time

9. Thermal characteristics

Table 6.

Symbol

th(j-mb)

Thermal characteristics

Parameter

thermal resistance

from junction to

mounting base

thermal resistance

from junction to

ambient

Conditions

Fig. 5

Min

Typ

Max

0.43

Unit

K/W

th(j-a)

minimum footprint ; mounted on a

printed-circuit board

K/W

BUK961R6-40E

All information provided in this document is subject to legal disclaimers.

Product data sheet

28 July 2016

4 / 13

Nexperia

BUK961R6-40E

N-channel TrenchMOS logic level FET

th(j-mb)

(K/W)

-1

= 0.5

0.2

0.1

003aaf570

0.05

-2

0.02

single shot

-3

-6

-5

-4

-3

-2

-1

(s)

Fig. 5.

Transient thermal impedance from junction to mounting base as a function of pulse duration.

10. Characteristics

Table 7.

Symbol

(BR)DSS

Characteristics

Parameter

drain-source

breakdown voltage

gate-source threshold

voltage

Conditions

= 250 µA; V

= 0 V; T

= 25 °C

= 250 µA; V

= 0 V; T

= -55 °C

= 1 mA; V

= V

; T

= 25 °C;

Fig. 9; Fig. 10

= 1 mA; V

= V

; T

= -55 °C;

Fig. 9

= 1 mA; V

= V

; T

= 175 °C;

Fig. 9

DSS

drain leakage current

= 40 V; V

= 0 V; T

= 25 °C

= 40 V; V

= 0 V; T

= 175 °C

GSS

gate leakage current

= 10 V; V

= 0 V; T

= 25 °C

= -10 V; V

= 0 V; T

= 25 °C

DSon

drain-source on-state

resistance

= 5 V; I

= 25 A; T

= 25 °C;

Fig. 11

= 10 V; I

= 25 A; T

= 25 °C;

Fig. 11

= 5 V; I

= 25 A; T

= 175 °C;

Fig. 12; Fig. 11

Dynamic characteristics

G(tot)

BUK961R6-40E

Min

1.4

0.5

Typ

1.7

0.13

1.35

1.17

Max

2.1

2.45

500

100

1.6

1.4

3.1

Unit

µA

mΩ

Static characteristics

GS(th)

total gate charge

gate-source charge

= 25 A; V

= 32 V; V

= 5 V;

Fig. 13; Fig. 14

All information provided in this document is subject to legal disclaimers.

120

26.9

Product data sheet

28 July 2016

5 / 13

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