Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
FEATURES
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Isolated package
BYV133F, BYV133X series
SYMBOL
QUICK REFERENCE DATA
V
R
= 35 V/ 40 V/ 45 V
I
O(AV)
= 20 A
V
F
≤
0.6 V
a1
1
k 2
a2
3
GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended
for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The BYV133F series is supplied in the SOT186 package.
The BYV133X series is supplied in the SOT186A package.
PINNING
PIN
1
2
3
tab
DESCRIPTION
anode 1 (a)
cathode (k)
anode 2 (a)
isolated
SOT186
case
SOT186A
case
1 2 3
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
BYV133F-
BYV133X-
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified output
current (both diodes
conducting)
Repetitive peak forward
current per diode
Non-repetitive peak forward
current per diode
Peak repetitive reverse
surge current per diode
Operating junction
temperature
Storage temperature
-
-
T
hs
≤
99 ˚C
square wave;
δ
= 0.5;
T
hs
≤
57 ˚C
square wave;
δ
= 0.5;
T
hs
≤
57 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; T
j
= 125 ˚C prior to
surge; with reapplied V
RRM(max)
pulse width and repetition rate
limited by T
j max
-
-
-
-
-
-
-
- 65
MIN.
35
35
35
35
35
MAX.
40
40
40
40
40
20
20
100
110
1
150
175
45
45
45
45
45
UNIT
V
V
V
A
A
A
A
A
˚C
˚C
I
RRM
T
j
T
stg
May 1998
1
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER
V
isol
Peak isolation voltage from
all terminals to external
heatsink
CONDITIONS
BYV133F, BYV133X series
MIN.
-
TYP. MAX. UNIT
-
1500
V
SOT186 package; R.H.
≤
65%; clean and
dustfree
V
isol
R.M.S. isolation voltage from SOT186A package; f = 50-60 Hz;
all terminals to external
sinusoidal waveform; R.H.
≤
65%; clean
heatsink
and dustfree
Capacitance from pin 2 to
external heatsink
f = 1 MHz
-
-
2500
V
C
isol
-
10
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-hs
R
th j-a
Thermal resistance junction
to heatsink
Thermal resistance junction
to ambient
CONDITIONS
per diode
both diodes
(with heatsink compound)
in free air
MIN.
-
-
-
TYP. MAX. UNIT
-
-
55
6
5
-
K/W
K/W
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER
V
F
I
R
C
d
Forward voltage per diode
Reverse current per diode
Junction capacitance per
diode
CONDITIONS
I
F
= 7 A; T
j
= 125˚C
I
F
= 20 A
V
R
= V
RWM
V
R
= V
RWM
; T
j
= 100˚C
V
R
= 5 V; f = 1 MHz, T
j
= 25˚C to 125˚C
MIN.
-
-
-
-
-
TYP. MAX. UNIT
0.5
0.84
0.1
10
210
0.6
0.94
0.8
15
-
V
V
mA
mA
pF
May 1998
2
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
BYV133F, BYV133X series
12
10
8
Forward dissipation, PF (W)
Vo = 0.418 V
Rs = 0.026 Ohms
BYV133
Ths(max) / C
D = 1.0
78
90
100
Reverse current, IR (mA)
BYV133
0.5
0.2
0.1
102
114
I
t
p
t
p
T
t
10
125 C
100 C
6
4
2
0
T
1
75 C
50 C
D=
126
0.1
138
150
15
0.01
0
Tj = 25 C
25
Reverse voltage, VR (V)
50
0
5
10
Average forward current, IF(AV) (A)
Fig.1. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
√
D.
BYV133
2.2
2.8
4
6
4
2
0
114
1.9
102
Ths(max) / C
90
a = 1.57
Fig.4. Typical reverse leakage current per diode;
I
R
= f(V
R
); parameter T
j
10
8
Forward dissipation, PF (W)
Vo = 0.418 V
Rs = 0.026 Ohms
Cd / pF
1000
BYV133
100
126
138
150
10
10
0
2
4
6
8
Average forward current, IF(AV) (A)
1
10
VR / V
100
Fig.2. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
BYV133
Fig.5. Typical junction capacitance per diode;
C
d
= f(V
R
); f = 1 MHz; T
j
= 25˚C to 125 ˚C.
50
Forward current, IF (A)
Tj = 25 C
Tj = 125 C
10
Transient thermal impedance, Zth j-hs (K/W)
40
1
30
typ
20
0.1
10
max
P
D
t
p
D=
t
p
T
t
T
0
0.01
0
0.2
0.4
0.6
0.8
1
Forward voltage, VF (V)
1.2
1.4
1us
10us
100us
1ms
10ms 100ms
1s
10s
pulse width, tp (s)
BYV133X
Fig.3. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.6. Transient thermal impedance; per diode;
Z
th j-hs
= f(t
p
).
May 1998
3
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
BYV133F, BYV133X series
10.2
max
5.7
max
3.2
3.0
0.9
0.5
4.4
max
2.9 max
4.4
4.0
7.9
7.5
17
max
seating
plane
3.5 max
not tinned
4.4
13.5
min
1
0.4
M
2
3
0.9
0.7
2.54
5.08
top view
1.3
0.55 max
Fig.7. SOT186; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
May 1998
4
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
max
3.2
3.0
BYV133F, BYV133X series
4.6
max
2.9 max
Recesses (2x)
2.5
0.8 max. depth
2.8
6.4
15.8
19
max. max.
seating
plane
15.8
max
3 max.
not tinned
3
2.5
13.5
min.
1
0.4
M
2
3
1.0 (2x)
0.6
2.54
0.5
2.5
1.3
0.9
0.7
5.08
Fig.8. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
May 1998
5
Rev 1.100
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