VS-80SQ... Series, VS-80SQ...-M3 Series
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 8 A
FEATURES
• 175 °C T
J
operation
• Low forward voltage drop
Cathode
Anode
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and
long term reliability
DO-204AR
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
DO-204AR
8A
30 V, 35 V, 40 V, 45 V
0.44 V
15 mA at 125 °C
175 °C
Single die
10 mJ
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for commercial level
• Halogen-free according to IEC 61249-2-21 definition
(-M3 only)
DESCRIPTION
The VS-80SQ... axial leaded Schottky rectifier series has
been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable
operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
CHARACTERISTICS
Rectangular waveform
Range
t
p
= 5 μs sine
8 Apk, T
J
= 125 °C
Range
VALUES
8
30 to 45
2400
0.44
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse
voltage
SYMBOL
V
R
V
RWM
30
35
40
45
V
VS-80SQ030
VS-80SQ030-M3
VS-80SQ035
VS-80SQ035-M3
VS-80SQ040
VS-80SQ040-M3
VS-80SQ045
VS-80SQ045-M3
UNITS
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 119 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 1.6 A, L = 7.8 mH
Current decaying linearly to zero in 1 μs
Frequency limited by, T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated load
condition and with rated
V
RRM
applied
VALUES
8
2400
380
10
1.6
mJ
A
A
UNITS
Revision: 19-Sep-11
Document Number: 93398
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-80SQ... Series, VS-80SQ...-M3 Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
8A
Maximum forward voltage drop
See fig. 1
V
FM (1)
16 A
8A
16 A
Maximum reverse leakage current
See fig. 2
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
0.53
0.60
0.44
0.55
2
15
900
10.0
10 000
mA
pF
nH
V/µs
V
UNITS
V
R
= 5 V
DC
, (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to lead
Typical thermal resistance,
junction to air
Approximate weight
SYMBOL
T
J
, T
Stg
R
thJL
R
thJA
DC operation; see fig. 4
1/8" lead length
TEST CONDITIONS
VALUES
- 55 to 175
8.0
°C/W
44
1.4
0.049
80SQ030
Marking device
Case style DO-204AR (JEDEC)
80SQ035
80SQ040
80SQ045
g
oz.
UNITS
°C
Revision: 19-Sep-11
Document Number: 93398
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-80SQ... Series, VS-80SQ...-M3 Series
www.vishay.com
Vishay Semiconductors
1000
I
F
- Instantaneous Forward Current (A)
100
I
R
- Reverse Current (mA)
100 T
J
= 175 °C
10
T
J
= 150 °C
T
J
= 125 °C
1 T
J
= 100 °C
0.1
T
J
= 75 °C
T
J
= 50 °C
0.01 T
J
= 25 °C
0.001
10
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
1
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
0
93398_02
5
10
15
20
25
30
35
40
45
93398_01
V
FM
- Forward Voltage Drop (V)
V
R
- Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
100
0
93398_03
10
20
30
40
50
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
= 1/8 inch
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
D = 0.01
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
0.001
0.01
0.1
1
P
DM
t
1
t
2
0.1
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
10
100
93398_04
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJL
Characteristics
Revision: 19-Sep-11
Document Number: 93398
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-80SQ... Series, VS-80SQ...-M3 Series
www.vishay.com
Vishay Semiconductors
6
Allowable Case Temperature (°C)
180
170
Average Power Loss (W)
80SQ
R
thJL
(DC) = 80 °C/W
5
4
3
D = 0.08
D = 0.17
D = 0.25
D = 0.33
D = 0.50
DC
RMS Limit
160
150
DC
2
1
0
140
= 1/8 inch
130
0
93398_05
2
4
6
8
10
12
93398_06
0
2
4
6
8
10
12
I
F(AV)
- Average Forward Current (A)
Average Forward Current - I
F(AV)
(A)
Fig. 6 - Forward Power Loss Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
FSM
- Non-Repetitive
Surge
Current (A)
10 000
At Any Rated Load Condition
And With Rated V
RRM
Applied
Following
Surge
1000
100
10
100
1000
10 000
93398_07
t
p
-
Square
Wave Pulse Duration (μs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
High-speed
switch
Freewheel
diode
40HFL40S02
+
V
d
= 25
V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
Revision: 19-Sep-11
Document Number: 93398
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-80SQ... Series, VS-80SQ...-M3 Series
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
1
2
3
4
5
6
7
80
2
S
3
Q
4
045
5
TR
6
-M3
7
-
-
-
-
-
-
-
Vishay Semiconductors product
80 = Current x 10
S = DO-204AR
Q = Schottky Q.. series
Voltage rating
TR = Tape and reel package
None = Bulk package
Environmental digit
None = Lead (Pb)-free and RoHS compliant
-M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free
030
035
040
045
=
=
=
=
30
35
40
45
V
V
V
V
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-80SQ030
VS-80SQ030TR
VS-80SQ030-M3
VS-80SQ030TR-M3
VS-80SQ035
VS-80SQ035TR
VS-80SQ035-M3
VS-80SQ035TR-M3
VS-80SQ040
VS-80SQ040TR
VS-80SQ040-M3
VS-80SQ040TR-M3
VS-80SQ045
VS-80SQ045TR
VS-80SQ045-M3
VS-80SQ045TR-M3
QUANTITY PER T/R
300
1500
300
1500
300
1500
300
1500
300
1500
300
1500
300
1500
300
1500
MINIMUM ORDER QUANTITY
300
1500
300
1500
300
1500
300
1500
300
1500
300
1500
300
1500
300
1500
PACKAGING DESCRIPTION
Bulk
Tape and reel
Bulk
Tape and reel
Bulk
Tape and reel
Bulk
Tape and reel
Bulk
Tape and reel
Bulk
Tape and reel
Bulk
Tape and reel
Bulk
Tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?95243
www.vishay.com/doc?95325
www.vishay.com/doc?95338
Revision: 19-Sep-11
Document Number: 93398
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
京公网安备 11010802033920号
EEWORLD
