IRF9Z24NLPBF datasheet, PDF - EEWORLD Datasheet

IRF9Z24NLPBF: DescriptionMOSFET P-CH 55V 12A TO-262; Categorysemiconductor Discrete semiconductor; File Size388KB，11 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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IRF9Z24NLPBF Overview

MOSFET P-CH 55V 12A TO-262

Parameter Name	Attribute value
FET type	P channel
technology	MOSFET (metal oxide)
Drain-source voltage (Vdss)	55V
Current - Continuous Drain (Id) at 25°C	12A（Tc）
Drive voltage (maximum Rds On, minimum Rds On)	10V
Rds On (maximum value) when different Id, Vgs	175 milliohms @ 7.2A, 10V
Vgs (th) (maximum value) when different Id	4V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)	19nC @ 10V
Vgs (maximum value)	±20V
Input capacitance (Ciss) at different Vds (maximum value)	350pF @ 25V
FET function	-
Power dissipation (maximum)	3.8W（Ta），45W（Tc）
Operating temperature	-55°C ~ 175°C（TJ）
Installation type	Through hole
Supplier device packaging	TO-262
Package/casing	TO-262-3, long lead, I²Pak, TO-262AA

PD- 95770

IRF9Z24NSPbF

IRF9Z24NLPBF

Lead-Free

www.irf.com

1

04/25/05

	IRF9Z24NLPBF	IRF9Z24NSTRLPBF
Description	MOSFET P-CH 55V 12A TO-262	Drain-source voltage (Vdss): 55V Continuous drain current (Id) (at 25°C): 12A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 175mΩ @ 7.2A, 10V Maximum power consumption Dispersion (Ta=25°C): 45W(Tc) Type: P-channel

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