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TK7A60W5,S5VX

Description
MOSFET N-CH 600V 7A TO-220SIS
Categorysemiconductor    Discrete semiconductor   
File Size238KB,10 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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TK7A60W5,S5VX Overview

MOSFET N-CH 600V 7A TO-220SIS

TK7A60W5,S5VX Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)600V
Current - Continuous Drain (Id) at 25°C7A(Ta)
Drive voltage (maximum Rds On, minimum Rds On)10V
Rds On (maximum value) when different Id, Vgs650 milliohms @ 3.5A, 10V
Vgs (th) (maximum value) when different Id4.5V @ 350µA
Gate charge (Qg) at different Vgs (maximum value)16nC @ 10V
Vgs (maximum value)±30V
Input capacitance (Ciss) at different Vds (maximum value)490pF @ 300V
FET function-
Power dissipation (maximum)30W(Tc)
Operating temperature150°C(TJ)
Installation typeThrough hole
Supplier device packagingTO-220SIS
Package/casingTO-220-3 whole package
TK7A60W5
MOSFETs
Silicon N-Channel MOS (DTMOS)
TK7A60W5
1. Applications
Switching Voltage Regulators
Motor Drivers
2. Features
(1)
(2)
(3)
(4)
Fast reverse recovery time: t
rr
= 75 ns (typ.)
Low drain-source on-resistance: R
DS(ON)
= 0.54
(typ.)
by used to Super Junction Structure : DTMOS
Easy to control Gate switching
Enhancement mode: V
th
= 3 to 4.5 V (V
DS
= 10 V, I
D
= 0.35 mA)
3. Packaging and Internal Circuit
1: Gate
2: Drain
3: Source
TO-220SIS
Start of commercial production
1
2013-10
2014-02-25
Rev.3.0

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